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公开(公告)号：US20230165161A1
公开(公告)日：2023-05-25
申请号：US17983554
申请日：2022-11-09
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/02 , H01L27/222
Abstract: A magnetic memory device may include a magnetic track that extends in a first direction. The magnetic track may include a lower magnetic layer that extends in the first direction, an upper magnetic layer that extends in the first direction on the lower magnetic layer, a spacer layer that extends in the first direction between the lower magnetic layer and the upper magnetic layer, and a non-magnetic pattern that penetrates the upper magnetic layer and is on the spacer layer. The non-magnetic pattern has a first junction surface that is in contact with a first portion of the upper magnetic layer, and a second junction surface that is in contact with a second portion of the upper magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
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公开(公告)号：US20250029644A1
公开(公告)日：2025-01-23
申请号：US18773949
申请日：2024-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Unghwan Pi , Stuart Papworth Parkin , Jaechun Jeon , Jaekeun Kim , Andrea Migliorini
Abstract: A magnetic memory device includes a lower magnetic track layer extending in a first direction and including a plurality of first magnetic domains, a spacer layer on the lower magnetic track layer and extending in the first direction, an upper magnetic track layer on the spacer layer and extending in the first direction, the upper magnetic track layer including a plurality of second magnetic domains, and a plurality of read units on the upper magnetic track layer and arranged apart from one another in the first direction, wherein the plurality of first magnetic domains and the plurality of second magnetic domains have magnetization directions parallel to each other at positions overlapping each other in a second direction perpendicular to the first direction.
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公开(公告)号：US20230165158A1
公开(公告)日：2023-05-25
申请号：US18051857
申请日：2022-11-01
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/08 , H01L43/02 , H01L43/10 , H01L27/222 , G11C11/161
Abstract: A magnetic memory device includes a conductive line extending in a first direction, and a magnetic track extending in the first direction on the conductive line. The magnetic track includes a lower magnetic layer, a spacer layer and an upper magnetic layer sequentially stacked on the conductive line, and a non-magnetic pattern on the spacer layer and adjacent a side of the upper magnetic layer. The non-magnetic pattern vertically overlaps with a portion of the lower magnetic layer. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer.
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公开(公告)号：US12165683B2
公开(公告)日：2024-12-10
申请号：US18096161
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
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公开(公告)号：US12119036B2
公开(公告)日：2024-10-15
申请号：US18096089
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
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Patent Agency Ranking
公开(公告)号：US20230165164A1
公开(公告)日：2023-05-25
申请号：US18050600
申请日：2022-10-28
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , See-Hun Yang , Jiho Yoon , Ung Hwan Pi
CPC classification number: H01L43/04 , H01L27/222 , H01L43/06
Abstract: A magnetic memory device includes a magnetic track extending in a first direction. The magnetic track includes a lower magnetic layer, an upper magnetic layer on the lower magnetic layer, a non-magnetic pattern on the lower magnetic layer and at a side of the upper magnetic layer, and a spacer layer between the lower magnetic layer and the upper magnetic layer and extending between the lower magnetic layer and the non-magnetic pattern. The lower magnetic layer and the upper magnetic layer are antiferromagnetically coupled to each other by the spacer layer. The non-magnetic pattern has a first surface and a second surface which are opposite to each other in a second direction perpendicular to the first direction. A junction surface between the non-magnetic pattern and the upper magnetic layer is inclined with respect to a reference surface perpendicular to the first surface and the second surface.
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公开(公告)号：US20230274772A1
公开(公告)日：2023-08-31
申请号：US18096089
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , G11C11/1675 , H10B61/00 , H10N50/80
Abstract: A magnetic memory device may include a magnetic track, which is extended in a first direction, and a first electrode, which is provided at a biasing point of the magnetic track and is configured to apply a voltage to the magnetic track. The magnetic track includes a first region between a first end of the magnetic track and the biasing point and a second region between the biasing point and a second end of the magnetic track. The first electrode may be configured to cause a difference between a current density in the first region and a current density in the second region.
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公开(公告)号：US20250040443A1
公开(公告)日：2025-01-30
申请号：US18776690
申请日：2024-07-18
Applicant: Samsung Electronics Co., Ltd.
Inventor： Unghwan Pi , Stuart Papworth Parkin , Jaechun Jeon , Jaekeun Kim , Andrea Migliorini
Abstract: According to a method of manufacturing a magnetic memory device, various types of magnetic memory devices can be manufactured at low cost by manufacturing a plurality of magnetic modules by using a delamination phenomenon of pattern segments and stacking the plurality of magnetic modules to complete a stacked memory device.
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公开(公告)号：US20250029670A1
公开(公告)日：2025-01-23
申请号：US18774226
申请日：2024-07-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Unghwan Pi , Stuart Papworth Parkin , Andrea Migliorini , Jaechun Jeon
Abstract: A method of operating a magnetic memory device includes: (i) applying a first current to a free layer of a magnetic tunnel junction structure, which includes a magnetic translation unit (MTU) extending between a first magnetic pad and a second magnetic pad, and a tunnel barrier layer and a pinned layer stacked on the MTU, so that a multi-domain is established within the MTU, (ii) applying a magnetic field to the free layer so that the magnetization direction of the MTU switches to become anti-parallel to the magnetization directions of the first magnetic pad and the second magnetic pad, (iii) applying a second current to the free layer so that a portion of the multi-domain penetrates into the first magnetic pad, and (iv) applying another magnetic field to the free layer so that the magnetization direction of the first magnetic pad switches.
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公开(公告)号：US20230298649A1
公开(公告)日：2023-09-21
申请号：US18096161
申请日：2023-01-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Stuart Papworth Parkin , Jaechun Jeon , Andrea Migliorini , Ung Hwan Pi
CPC classification number: G11C11/1673 , H10B61/00 , G11C11/1675
Abstract: A magnetic memory device includes a conductive line that extends in a first direction, and a magnetic track line that extends in the first direction on a top surface of the conductive line. The conductive line may include a first region having a first width in a second direction, and a second region having a second width in the second direction. The first direction and the second direction are parallel to the top surface of the conductive line and are perpendicular to each other. The second width may be greater than the first width. The magnetic track line includes first domains arranged in the first direction on the first region of the conductive line, and second domains arranged in the first direction on the second region of the conductive line. A size of each of the second domains may be less than a size of each of the first domains.
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