公开(公告)号：US20190067228A1

公开(公告)日：2019-02-28

申请号：US16052383

申请日：2018-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/485

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20130244419A1

公开(公告)日：2013-09-19

申请号：US13875525

申请日：2013-05-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chang-Woo SHIN ,  Hyun-Soo CHUNG ,  Eun-Chul AHN ,  Jum-Gon KIM ,  Jin-Ho CHUN

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L23/525 ,  H01L23/53238 ,  H01L24/02 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02331 ,  H01L2224/0235 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/13099 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/04941 ,  H01L2924/12044

Abstract: A semiconductor device including an interconnection structure including a copper pad, a pad barrier layer and a metal redistribution layer, an interconnection structure thereof and methods of fabricating the same are provided. The semiconductor device includes a copper pad disposed on a first layer, a pad barrier layer including titanium disposed on the copper pad, an inorganic insulating layer disposed on the pad barrier layer, a buffer layer disposed on the inorganic insulating layer, wherein the inorganic insulating layer and the buffer layer expose a portion of the pad barrier layer, a seed metal layer disposed on the exposed buffer layer, a metal redistribution layer disposed on the seed metal layer, and a first protective layer disposed on the metal redistribution layer.

Abstract translation: 提供一种包括铜焊盘，焊盘阻挡层和金属再分布层的互连结构的半导体器件，其互连结构及其制造方法。 半导体器件包括设置在第一层上的铜焊盘，包括设置在铜焊盘上的钛的焊盘阻挡层，设置在焊盘阻挡层上的无机绝缘层，设置在无机绝缘层上的缓冲层，其中无机绝缘 所述缓冲层暴露所述焊盘阻挡层的一部分，设置在所述暴露的缓冲层上的种子金属层，设置在所述种子金属层上的金属再分配层以及设置在所述金属再分配层上的第一保护层。

公开(公告)号：US20210005565A1

公开(公告)日：2021-01-07

申请号：US17029639

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong-Min SON ,  Jeong-Gi JIN ,  Jin-Ho AN ,  Jin-Ho CHUN ,  Kwang-Jin MOON ,  Ho-Jin LEE

IPC: H01L23/00 ,  H01L23/485 ,  H01L23/522

Abstract: A semiconductor device includes a protective layer, a redistribution pattern, a pad pattern and an insulating polymer layer. The protective layer may be formed on a substrate. The redistribution pattern may be formed on the protective layer. An upper surface of the redistribution may be substantially flat. The pad pattern may be formed directly on the redistribution pattern. An upper surface of the pad pattern may be substantially flat. The insulating polymer layer may be formed on the redistribution pattern and the pad pattern. An upper surface of the insulating polymer layer may be lower than the upper surface of the pad pattern. The semiconductor device may have a high reliability.

公开(公告)号：US20190131228A1

公开(公告)日：2019-05-02

申请号：US16106645

申请日：2018-08-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-Ho CHUN ,  Seong-Min SON ,  Hyung-Jun JEON ,  Kwang-Jin MOON ,  Jin-Ho AN ,  Ho-Jin LEE ,  Atsushi FUJISAKI

IPC: H01L23/498 ,  H01L23/525 ,  H01L23/532 ,  H01L23/31 ,  H01L21/768 ,  H01L23/00

Abstract: A semiconductor device and a method of manufacturing the same, the device including a through-hole electrode structure extending through a substrate; a redistribution layer on the through-hole electrode structure; and a conductive pad, the conductive pad including a penetrating portion extending through the redistribution layer; and a protrusion portion on the penetrating portion, the protrusion portion protruding from an upper surface of the redistribution layer, wherein a central region of an upper surface of the protrusion portion is flat and not closer to the substrate than an edge region of the upper surface of the protrusion portion.