公开(公告)号：US20240120351A1

公开(公告)日：2024-04-11

申请号：US18302828

申请日：2023-04-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngrae Kim ,  Sanghyuck Moon ,  Jueun Park ,  Jaeho Lee ,  Jeongjin Cho

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463

Abstract: An image sensor includes a substrate and a pixel separation portion disposed in the substrate and separating first pixels and second pixels from each other. The first pixels and the second pixels are alternately arranged in a first direction and a second direction which intersect each other. Each of the first pixels has a first width in the first direction. Each of the second pixels has a second width in the first direction, which is narrower than the first width. The pixel separation portion includes a main separation portion between the first and second pixels, and protrusions, each of which protrudes from a side surface of the main separation portion in at least one of the first and second directions. Ones of the protrusions protrude into a respective one of the first pixels to divide the respective one of the first pixels into a plurality of sub-pixels.

公开(公告)号：US20240243142A1

公开(公告)日：2024-07-18

申请号：US18408834

申请日：2024-01-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sanghyuck MOON ,  Jueun Park ,  Hyuncheol Kim ,  Eunsub Shim

IPC: H01L27/146

CPC classification number: H01L27/14612 ,  H01L27/14603 ,  H01L27/14636

Abstract: An image sensor, including a shared pixel including two sub pixels of a 1X2 structure and sharing a floating diffusion region on each of the two sub pixels through a metal wiring, unit pixels surrounding the floating diffusion region, within the shared pixel, separated from each other by front-side deep trench isolation, and each including a photodiode, a transfer transistor adjacent to the floating diffusion region and on each of the unit pixels, a reset transistor and a selection transistor on a first unit pixel located in a first quadrant among the unit pixels, a conversion gain transistor on a second unit pixel located in a second quadrant among the unit pixels, and a source follower transistor on a third unit pixel located in a third quadrant and a fourth unit pixel located in a fourth quadrant among the unit pixels.

公开(公告)号：US20240128287A1

公开(公告)日：2024-04-18

申请号：US18374343

申请日：2023-09-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyuck Moon ,  Jueun Park ,  Hyuncheol Kim ,  Jungbin Yun ,  Seungjoon Lee ,  Taesub Jung

IPC: H01L27/146

CPC classification number: H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

Abstract: An image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.

公开(公告)号：US11683603B2

公开(公告)日：2023-06-20

申请号：US17529744

申请日：2021-11-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwanwoong Kim ,  Jihun Kim ,  Jueun Park ,  Jungwook Lim ,  Youjin Jeong ,  Taesub Jung

IPC: H04N25/63 ,  H04N25/62

CPC classification number: H04N25/63 ,  H04N25/62

Abstract: An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

公开(公告)号：US11490039B2

公开(公告)日：2022-11-01

申请号：US17470302

申请日：2021-09-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jueun Park ,  Jungbin Yun ,  Kyungho Lee ,  Sanghyuck Moon ,  Hongsuk Lee

IPC: H04N5/3745 ,  H04N5/369 ,  H04N5/353

Abstract: An image sensor includes first conductive patterns on a first surface of a substrate, and second conductive patterns between the first conductive patterns and the first surface, in which at least one of the first conductive patterns or the second conductive patterns includes a time constant adjustment pattern and neighboring conductive patterns, in which the time constant adjustment pattern extends in a first direction that is parallel to the first surface and the neighboring conductive patterns extend in the first direction and are most adjacent to the time constant adjustment pattern. The time constant adjustment pattern includes one or more time constant adjustment portions that protrude in a second direction that is parallel to the first surface and is perpendicular to the first direction, and the one or more time constant adjustment portions do not overlap the neighboring conductive patterns in the second direction.