公开(公告)号：US20160057346A1

公开(公告)日：2016-02-25

申请号：US14829081

申请日：2015-08-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun-Soo PARK ,  Sun-Ho KIM ,  Jung-Ho KIM

IPC: H04N5/232

CPC classification number: G06F3/0304 ,  G06F1/3231 ,  G06F3/005 ,  H04N1/00 ,  H04N5/232 ,  H04N5/23212 ,  H04N5/23216 ,  H04N5/23241 ,  H04N5/23293 ,  Y02D10/173

Abstract: A method for sensing proximity by an electronic device is provided. The method includes confirming a phase difference regarding a corresponding subject of an image acquired through a lens of the electronic device by operating a phase-difference autofocus sensor and determining that the corresponding subject is proximate to the electronic device when the confirmed phase difference is larger than a designated first reference value.

Abstract translation: 提供了一种用于感测由电子设备接近的方法。 该方法包括通过操作相位差自动对焦传感器来确认通过电子设备的透镜获取的图像的相应对象的相位差，并且当确认的相位差大于相对于自动对焦传感器时确定对应的对象接近电子设备 指定的第一参考值。

公开(公告)号：US20150126849A1

公开(公告)日：2015-05-07

申请号：US14449843

申请日：2014-08-01

Applicant: SAMSUNG MEDISON CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Ho KIM ,  Dal-kwon KOH ,  Jong-kyu JUNG ,  Jung-taek OH ,  Jae-kwang LEE

IPC: A61B5/00

CPC classification number: A61B5/0095 ,  A61B8/4444 ,  G01N21/1702 ,  G01N2021/1706 ,  G01N2021/1708

Abstract: Provided is a photoacoustic probe. The photoacoustic probe is configured to control light emitted from an optical unit by using a shutter that is switched between a state in which the shutter is opened to allow light to pass therethrough and a state in which the shutter blocks the light according to whether an inspection starts.

Abstract translation: 提供了光声探头。 光声探测器被配置为通过使用在其中打开快门以允许光通过的状态之间切换的快门来控制从光学单元发射的光以及快门根据检查是否遮光的状态 开始

公开(公告)号：US20150235836A1

公开(公告)日：2015-08-20

申请号：US14625388

申请日：2015-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Yong GO ,  Jin-Gyun KIM ,  Dong-Kyum KIM ,  Jung-Ho KIM ,  Koong-Hyun NAM ,  Sung-Hae LEE ,  Eun-Young LEE ,  Jung-Geun JEE ,  Eun-Yeoung CHOI ,  Ki-Hyun HWANG

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/0228 ,  C23C16/01 ,  C23C16/40 ,  C23C16/45525 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02175 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/68771 ,  H01L27/11582

Abstract: In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a preliminary precursor layer, a precursor flow and a first oxidizing agent flow are provided on the preliminary precursor layer alternately and repeatedly to form precursor layers and first oxidizing agent layers alternately stacked on the preliminary precursor layer, and a second oxidizing agent flow is provided on the precursor layer or the first oxidizing agent layer alternately stacked to form a second oxidizing agent layer.

Abstract translation: 在形成半导体工艺的氧化物层的方法中，在沉积室中的衬底上提供预备前驱体流以形成预备前体层，在预备前体层上交替地设置前体流和第一氧化剂流 并重复地形成交替堆叠在预备前驱体层上的前体层和第一氧化剂层，并且在前体层或第一氧化剂层上交替堆叠形成第二氧化剂层的第二氧化剂流。