公开(公告)号：US11594550B2

公开(公告)日：2023-02-28

申请号：US16852907

申请日：2020-04-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Seung Min Song ,  Jae Hoon Shin ,  Joong Shik Shin ,  Geun Won Lim

IPC: H01L27/11582 ,  H01L27/11573 ,  H01L23/528 ,  H01L21/311 ,  H01L27/11565

Abstract: A nonvolatile memory device with improved product reliability and a method of fabricating the same is provided. The nonvolatile memory device comprises a substrate, a first mold structure disposed on the substrate and including a plurality of first gate electrodes, a second mold structure disposed on the first mold structure and including a plurality of second gate electrodes and a plurality of channel structures intersecting the first gate electrodes and the second gate electrodes by penetrating the first and second mold structures, wherein the first mold structure includes first and second stacks, which are spaced apart from each other, and the second mold structure includes a third stack, which is stacked on the first stack, a fourth stack, which is stacked on the second stack, and first connecting parts, which connect the third and fourth stacks.

公开(公告)号：US11121148B2

公开(公告)日：2021-09-14

申请号：US16912894

申请日：2020-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H01L27/11578 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.

公开(公告)号：US11723200B2

公开(公告)日：2023-08-08

申请号：US17399239

申请日：2021-08-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kang Min Kim ,  Jin Hyuk Kim ,  Jung Tae Sung ,  Joong Shik Shin ,  Sung Hyung Lee

IPC: H10B43/20 ,  H01L29/06 ,  H01L29/08 ,  G11C7/18

CPC classification number: H10B43/20 ,  G11C7/18 ,  H01L29/0649 ,  H01L29/0847

Abstract: A semiconductor device includes a first substrate including a cell region and surrounded by an extension region, a common source plate on the first substrate, a supporter on the common source plate, a first stack structure on the supporter and including an alternately stacked first insulating film and first gate electrode, a channel hole penetrating the first stack structure, the supporter, and the common source plate on the cell region, and an electrode isolation trench spaced apart from the channel hole in a first direction on the cell region, extending in a second direction, and penetrating the first stack structure, the supporter, and the common source plate, wherein a first thickness of the supporter in a first region adjacent to the electrode isolation trench is greater than a second thickness of the supporter in a second region formed between the electrode isolation trench and the channel hole.