公开(公告)号：US20190267246A1

公开(公告)日：2019-08-29

申请号：US16263759

申请日：2019-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： KeunHee BAI ,  Jongchul Park ,  Seungjun Kim ,  Seungju Park ,  Young-Ju Park ,  Hak-Sun Lee

IPC: H01L21/3065 ,  H01L21/3213 ,  H01L21/308

Abstract: A method for forming a fine pattern includes forming line patterns and a connection pattern on a semiconductor substrate, the line patterns extending in a first direction and spaced apart from each other in a second direction intersecting the first direction, and the connection pattern connecting portions of the line patterns adjacent to each other in the second direction, and performing an ion beam etching process on the connection pattern. The ion beam etching process provides an ion beam in an incident direction parallel to a plane defined by the first direction and a third direction perpendicular to a top surface of the semiconductor substrate, and the incident direction of the ion beam is not perpendicular to the top surface of the semiconductor substrate.

公开(公告)号：US20160204030A1

公开(公告)日：2016-07-14

申请号：US14955374

申请日：2015-12-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： KeunHee BAI ,  Dohyoung KIM ,  Johnsoo KIM ,  Heungsik PARK ,  Doo-Young LEE ,  Sanghyun LEE

IPC: H01L21/768 ,  H01L21/3065 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/76897 ,  H01L21/823431 ,  H01L21/823475 ,  H01L29/517 ,  H01L29/66545

Abstract: A sacrificial layer is formed to cover the gate structures. The sacrificial layer is patterned to form a first opening in the sacrificial layer. A preliminary contact is formed in the first opening and the sacrificial layer is selectively removed. An insulating layer is formed to cover the gate structures and to expose the preliminary contact. The preliminary contact is removed to form a second opening in the insulating layer, and then a contact is formed in the second opening.

Abstract translation: 形成牺牲层以覆盖栅极结构。 牺牲层被图案化以在牺牲层中形成第一开口。 在第一开口中形成初步接触，并且选择性地去除牺牲层。 形成绝缘层以覆盖栅极结构并露出初步接触。 去除预接触以在绝缘层中形成第二开口，然后在第二开口中形成接触。