公开(公告)号：US20240321921A1

公开(公告)日：2024-09-26

申请号：US18610413

申请日：2024-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seounghyun KIM ,  Changhyo KOO ,  Sangchun PARK ,  Kwanghee LEE ,  Wook LEE ,  Haeyeon CHUNG

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14645

Abstract: Provided is an image sensor including a device isolation structure. The image sensor includes a semiconductor substrate including a pixel array including a plurality of pixels, a first photoelectric conversion device and a second photoelectric conversion device inside the semiconductor substrate and included in each of the plurality of pixels, microlenses on the first photoelectric conversion device and the second photoelectric conversion device and a device isolation structure between the plurality of pixels and between the first photoelectric conversion device and the second photoelectric conversion device, the device isolation structure opening a part between the first photoelectric conversion device and the second photoelectric conversion device, including an open region at each edge of the plurality of pixels, and may be continuous in the pixel array.

公开(公告)号：US20240321922A1

公开(公告)日：2024-09-26

申请号：US18612035

申请日：2024-03-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangchun PARK ,  Sungsoo CHOI ,  Seounghyun KIM

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14636 ,  H01L27/1464

Abstract: A pixel includes a semiconductor substrate including a first surface and a second surface, a plurality of photoelectric conversion regions between the first surface and the second surface of the semiconductor substrate, one or more floating diffusion regions on the first surface of the semiconductor substrate and spaced apart from the plurality of photoelectric conversion regions; a plurality of vertical transmission gates configured to surround a path of charges transferred from each photoelectric conversion region of the plurality of photoelectric conversion regions to the one or more floating diffusion regions; a floating diffusion region connection pad on the one or more floating diffusion regions; and a metal contact connected to the floating diffusion region connection pad.

公开(公告)号：US20210175286A1

公开(公告)日：2021-06-10

申请号：US17034316

申请日：2020-09-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangchun PARK ,  Kwansik KIM ,  Hongki KIM ,  Sangsu PARK ,  Beomsuk LEE ,  Taeyon LEE ,  Gwideok Ryan LEE

IPC: H01L27/30 ,  H01L27/146 ,  H01L51/44

Abstract: An image sensor includes a first substrate having a first surface and a second surface opposite to the first surface. The first substrate includes an active pixel, region having a plurality of active pixels. A plurality of lower electrode structures is disposed on the second surface of the first substrate and corresponds to the plurality of active pixels, An upper electrode is disposed on the plurality of lower electrode structures. An organic photoelectric conversion layer is disposed between the plurality of lower electrode structures and the upper electrode. A second substrate is disposed on the first surface of the first substrate. A driving circuit configured to drive the plurality of active pixels is disposed on the second substrate. The plurality of lower electrode structures includes a first barrier layer, a reflective layer disposed on the first barrier layer and a second barrier layer disposed on the reflective layer.

公开(公告)号：US20240387585A1

公开(公告)日：2024-11-21

申请号：US18426734

申请日：2024-01-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dohyun KWON ,  Sangchun PARK ,  Sungyong YOU ,  Dong-Chul LEE

IPC: H01L27/146

Abstract: An image sensor comprises a substrate that comprises a first surface, a second surface facing the first surface, and a plurality of pixel regions disposed along a first direction and a second direction. The sensor comprises a plurality of ground regions that are disposed within a portion of the substrate along a depth direction perpendicular to the first direction and the second direction from the first surface of the substrate. The sensor comprises a deep trench that extends from the first surface of the substrate to the second surface of the substrate. The sensor comprises a shallow trench that extends into the portion of the substrate along the depth direction from the first surface of the substrate and is disposed at an outer edge of at least a portion of the deep trench.

公开(公告)号：US20200161348A1

公开(公告)日：2020-05-21

申请号：US16418557

申请日：2019-05-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gwideok Ryan LEE ,  Taeyon LEE ,  Sangchun PARK

IPC: H01L27/146 ,  H01L31/032 ,  H01L29/417 ,  H01L29/786 ,  H04N5/374

Abstract: An image sensor is provided and includes a semiconductor substrate having a first conductivity type, a photoelectric conversion region in the semiconductor substrate and having a second conductivity type, an oxide semiconductor pattern adjacent to a first surface of the semiconductor substrate, and a transfer gate on the first surface and adjacent to the photoelectric conversion region and the oxide semiconductor pattern.