公开(公告)号：US09087883B2

公开(公告)日：2015-07-21

申请号：US14464014

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHyun Lee ,  Jin-Woo Park ,  Taesung Park

IPC: H01L21/50 ,  H01L21/768 ,  H01L23/48 ,  H01L23/31 ,  H01L23/00 ,  H01L25/065 ,  H01L21/82 ,  H01L21/56

CPC classification number: H01L21/76892 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76822 ,  H01L21/76894 ,  H01L21/82 ,  H01L23/3185 ,  H01L23/48 ,  H01L24/24 ,  H01L24/82 ,  H01L24/95 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24147 ,  H01L2224/245 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81191 ,  H01L2224/821 ,  H01L2224/82365 ,  H01L2224/95 ,  H01L2225/06551 ,  H01L2225/06565 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/01029 ,  H05K3/4661 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

Abstract: Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a sidewall insulation layer of another semiconductor chip to a bonding pad on the other semiconductor chip.

Abstract translation: 堆叠的半导体芯片包括将半导体芯片电连接到每个芯片的无接线的互连。 在半导体芯片之间的粘合层中的开口可以提供用于从沿着半导体芯片的侧壁绝缘层的一个半导体芯片上的接合焊盘沿另一个半导体芯片的侧壁绝缘层到接合焊盘的互连的路径 另一个半导体芯片。

公开(公告)号：US20140008818A1

公开(公告)日：2014-01-09

申请号：US13886758

申请日：2013-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHyun Lee ,  Jin-Woo Park ,  Taesung Park

IPC: H01L23/48

CPC classification number: H01L21/76892 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76822 ,  H01L21/76894 ,  H01L21/82 ,  H01L23/3185 ,  H01L23/48 ,  H01L24/24 ,  H01L24/82 ,  H01L24/95 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24147 ,  H01L2224/245 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81191 ,  H01L2224/821 ,  H01L2224/82365 ,  H01L2224/95 ,  H01L2225/06551 ,  H01L2225/06565 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/01029 ,  H05K3/4661 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

Abstract: Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a sidewall insulation layer of another semiconductor chip to a bonding pad on the other semiconductor chip.

Abstract translation: 堆叠的半导体芯片包括将半导体芯片电连接到每个芯片的无接线的互连。 在半导体芯片之间的粘合层中的开口可以提供用于从沿着半导体芯片的侧壁绝缘层的一个半导体芯片上的接合焊盘沿另一个半导体芯片的侧壁绝缘层到接合焊盘的互连的路径 另一个半导体芯片。

公开(公告)号：US08890333B2

公开(公告)日：2014-11-18

申请号：US13886758

申请日：2013-05-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHyun Lee ,  Jin-Woo Park ,  Taesung Park

IPC: H01L29/40

CPC classification number: H01L21/76892 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76822 ,  H01L21/76894 ,  H01L21/82 ,  H01L23/3185 ,  H01L23/48 ,  H01L24/24 ,  H01L24/82 ,  H01L24/95 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24147 ,  H01L2224/245 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81191 ,  H01L2224/821 ,  H01L2224/82365 ,  H01L2224/95 ,  H01L2225/06551 ,  H01L2225/06565 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/01029 ,  H05K3/4661 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

Abstract: Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a sidewall insulation layer of another semiconductor chip to a bonding pad on the other semiconductor chip.

Abstract translation: 堆叠的半导体芯片包括将半导体芯片电连接到每个芯片的无接线的互连。 在半导体芯片之间的粘合层中的开口可以提供用于从沿着半导体芯片的侧壁绝缘层的一个半导体芯片上的接合焊盘沿另一个半导体芯片的侧壁绝缘层到接合焊盘的互连的路径 另一个半导体芯片。

公开(公告)号：US20150031170A1

公开(公告)日：2015-01-29

申请号：US14464014

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： SeokHyun Lee ,  Jin-Woo Park ,  Taesung Park

IPC: H01L21/768 ,  H01L21/82

CPC classification number: H01L21/76892 ,  H01L21/561 ,  H01L21/568 ,  H01L21/76822 ,  H01L21/76894 ,  H01L21/82 ,  H01L23/3185 ,  H01L23/48 ,  H01L24/24 ,  H01L24/82 ,  H01L24/95 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24147 ,  H01L2224/245 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/73267 ,  H01L2224/81191 ,  H01L2224/821 ,  H01L2224/82365 ,  H01L2224/95 ,  H01L2225/06551 ,  H01L2225/06565 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/01029 ,  H05K3/4661 ,  H01L2924/00014 ,  H01L2224/82 ,  H01L2924/00

Abstract: Stacked semiconductor chips include a bonding-wire-free interconnection electrically connecting the semiconductor chips to each. An opening in an adhesion layer between the semiconductor chips may provide a path for the interconnection from a bonding pad on one semiconductor chip, along a sidewall insulation layer of the semiconductor chip, along a sidewall insulation layer of another semiconductor chip to a bonding pad on the other semiconductor chip.

Abstract translation: 堆叠的半导体芯片包括将半导体芯片电连接到每个芯片的无接线的互连。 在半导体芯片之间的粘合层中的开口可以提供用于从沿着半导体芯片的侧壁绝缘层的一个半导体芯片上的接合焊盘沿另一个半导体芯片的侧壁绝缘层到接合焊盘的互连的路径 另一个半导体芯片。