公开(公告)号：US20240411227A1

公开(公告)日：2024-12-12

申请号：US18427044

申请日：2024-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Gap Im ,  Seonkyu Shin ,  Sanghoon Ahn ,  Hanhum Park ,  Minkyung Cho ,  Chungryeol Lee ,  Seungmin Lee ,  Changhyeon Lee ,  Sukwon Jang

IPC: G03F7/11 ,  G03F7/031 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: A photolithograph method is provided. The photolithograph method may include forming a photoresist pattern on a substrate and conformally forming a liner layer on the photoresist pattern, wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other, the monomer includes multiple bonds between carbon atoms, the initiator includes a material that forms a radical by thermal decomposition, a copolymer is formed by an initiating reaction between the radical and the monomer, and the liner layer includes the copolymer.

公开(公告)号：US20240421206A1

公开(公告)日：2024-12-19

申请号：US18663186

申请日：2024-05-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seonkyu Shin ,  Yongjin Kim ,  Sanghoon Ahn ,  Minkyoung Lee

IPC: H01L29/423 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device includes an active pattern extending on a substrate in a first direction; first and second lower channel layers in a first region and a second region of the active pattern, respectively; first and second upper channel layers on the first and second lower channel layers, respectively; a first source/drain pattern connected to the first and second lower channel layers; an isolation insulating layer on surfaces of the first source/drain pattern in the second direction, where a thickness of opposing edge portions of the isolation insulating layer when viewed in cross section along the first direction is smaller than a thickness of a central portion therebetween; a second source/drain pattern connected to the first and second upper channel layers; and an interlayer insulating layer on the second source/drain patterns and on the isolation insulating layer.