公开(公告)号：US11881426B2

公开(公告)日：2024-01-23

申请号：US17735723

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40 ,  G03F7/20

CPC classification number: H01L21/68707 ,  G03F7/40 ,  G03F7/2004

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US20230062447A1

公开(公告)日：2023-03-02

申请号：US17735723

申请日：2022-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US20240120232A1

公开(公告)日：2024-04-11

申请号：US18545644

申请日：2023-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine PARK ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40

CPC classification number: H01L21/68707 ,  G03F7/40 ,  G03F7/2004

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US11798801B2

公开(公告)日：2023-10-24

申请号：US18048924

申请日：2022-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae Jang ,  Seungmin Shin ,  Kuntack Lee ,  Seungho Kim ,  Younghoo Kim ,  Taehong Kim ,  Sunghyun Park

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  B08B3/10

CPC classification number: H01L21/02057 ,  B08B3/08 ,  B08B3/10 ,  B08B7/0035

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.

公开(公告)号：US12278133B2

公开(公告)日：2025-04-15

申请号：US18545644

申请日：2023-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjine Park ,  Kuntack Lee ,  Jihwan Park ,  Seungmin Shin

IPC: H01L21/687 ,  G03F7/40 ,  G03F7/20

Abstract: A substrate processing apparatus includes: a first process chamber in which a developing process is performed by supplying a developer to a substrate that is in a dry state; a second process chamber in which a drying process is performed on the substrate by supplying a supercritical fluid to the substrate on which the developing process is performed and which is in a wet state; a third process chamber in which a bake operation is performed on the substrate on which the drying operation is performed and is in a dry state; a fourth process chamber in which a cooling operation is performed on the substrate on which the bake operation is performed and is in a dry state; and a substrate transferring unit configured to transfer the substrate between the first to fourth process chambers.

公开(公告)号：US20250079154A1

公开(公告)日：2025-03-06

申请号：US18652323

申请日：2024-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyoung Kim ,  Dohyun Kim ,  Sechan Kim ,  Kijong Park ,  Yuri Park ,  Sunjoong Song ,  Eunjin Song ,  Seungmin Shin ,  Seungcheol Chae ,  Sangjoon Park ,  Hyunjin Jang

IPC: H01L21/02 ,  H01L21/311

Abstract: A method of manufacturing an integrated circuit device includes forming a hafnium oxide film on a substrate and partially etching the hafnium oxide film. Partially etching the hafnium oxide film includes performing a dry treatment that changes components of a surface region that extends from an exposed surface of the hafnium oxide film into the hafnium oxide film by as much as a predetermined thickness by isotropically exposing the hafnium oxide film to a gas mixture that includes a halogen element-containing gas and a catalytic gas that includes hydrogen atoms in an atmosphere in which no plasma is applied onto the substrate, performing a wet treatment with an acidic solution that at least partially removes the component-changed surface region from the hafnium oxide film, and repeating a sequence of the dry treatment and the wet treatment.

公开(公告)号：US20240030038A1

公开(公告)日：2024-01-25

申请号：US18139840

申请日：2023-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin Shin ,  Joonyoung Kim ,  Kijong Park ,  Sunjoong Song ,  Seungcheol Chae

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31122 ,  H01L21/67069 ,  H01L21/6875 ,  H01L21/68785

Abstract: Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.

公开(公告)号：US11482410B2

公开(公告)日：2022-10-25

申请号：US17398219

申请日：2021-08-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hunjae Jang ,  Seungmin Shin ,  Kuntack Lee ,  Seungho Kim ,  Younghoo Kim ,  Taehong Kim ,  Sunghyun Park

IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  B08B3/10

Abstract: A wafer-cleaning apparatus includes an inner pin that supports a wafer. The wafer-cleaning apparatus further includes a nozzle disposed above the inner pin, a light source disposed under the inner pin, a window disposed between the light source and the wafer, and a window protector disposed between the wafer and the window. The nozzle supplies a chemical liquid to the wafer and the inner pin distributes a portion of the chemical liquid on an upper surface of the wafer by rotating the wafer. The window protector receives a portion of the chemical liquid that flows out of the wafer and the light source supplies the light to the wafer through the window protector and the window.