公开(公告)号：US20250079154A1

公开(公告)日：2025-03-06

申请号：US18652323

申请日：2024-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyoung Kim ,  Dohyun Kim ,  Sechan Kim ,  Kijong Park ,  Yuri Park ,  Sunjoong Song ,  Eunjin Song ,  Seungmin Shin ,  Seungcheol Chae ,  Sangjoon Park ,  Hyunjin Jang

IPC: H01L21/02 ,  H01L21/311

Abstract: A method of manufacturing an integrated circuit device includes forming a hafnium oxide film on a substrate and partially etching the hafnium oxide film. Partially etching the hafnium oxide film includes performing a dry treatment that changes components of a surface region that extends from an exposed surface of the hafnium oxide film into the hafnium oxide film by as much as a predetermined thickness by isotropically exposing the hafnium oxide film to a gas mixture that includes a halogen element-containing gas and a catalytic gas that includes hydrogen atoms in an atmosphere in which no plasma is applied onto the substrate, performing a wet treatment with an acidic solution that at least partially removes the component-changed surface region from the hafnium oxide film, and repeating a sequence of the dry treatment and the wet treatment.

公开(公告)号：US20230230843A1

公开(公告)日：2023-07-20

申请号：US18095798

申请日：2023-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeheon Kim ,  Kyunghyun Kim ,  Changsup Mun ,  Junyoul Yang ,  Sanghoon Jeong ,  Yongsik Chung ,  Seungcheol Chae

IPC: H01L21/311 ,  H01L29/66

CPC classification number: H01L21/31111 ,  H01L29/66666 ,  H10B80/00

Abstract: A wet etching method includes: providing a structure including an etching target film into a process bath containing a first etching solution having a first phosphoric acid concentration; performing a first etching process for etching the etching target film with the first etching solution in the process bath; providing a second etching solution having a second phosphoric acid concentration different from the first phosphoric acid concentration by changing a phosphoric acid concentration in the first etching solution; performing a second etching process for etching the etching target film with the second etching solution in the process bath; providing a third etching solution having a third phosphoric acid concentration different from the first and second phosphoric acid concentrations by changing a phosphoric acid concentration in the second etching solution; and performing a third etching process for etching the etching target film with the third etching solution in the process bath.

公开(公告)号：US20240030038A1

公开(公告)日：2024-01-25

申请号：US18139840

申请日：2023-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungmin Shin ,  Joonyoung Kim ,  Kijong Park ,  Sunjoong Song ,  Seungcheol Chae

IPC: H01L21/311 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01L21/31122 ,  H01L21/67069 ,  H01L21/6875 ,  H01L21/68785

Abstract: Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.