公开(公告)号：US09123750B2

公开(公告)日：2015-09-01

申请号：US14016599

申请日：2013-09-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L29/10 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor.

Abstract translation: 根据示例性实施例，晶体管可以包括彼此堆叠的栅电极，栅极绝缘层和沟道层; 以及分别与沟道层的第一和第二区域接触的源电极和漏电极。 沟道层可以包括金属氮氧化物。 可以用含氢的等离子体处理沟道层的第一和第二区域，并且第一和第二区域具有比沟道层的剩余区域的载流子浓度更高的载流子浓度。 沟道层的第一和第二区域可以具有比其余区域更低的氧浓度和更高的氮浓度。 沟道层的金属氧氮化物可以包括基于氮氧化锌（ZnON）的半导体。

公开(公告)号：US09412769B2

公开(公告)日：2016-08-09

申请号：US14450913

申请日：2014-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-seok Son ,  Sun-jae Kim ,  Tae-sang Kim

IPC: H01L27/088 ,  H01L27/12 ,  H01L27/32 ,  H01L29/786 ,  G02F1/1362 ,  H01L29/49

CPC classification number: H01L27/1251 ,  G02F1/13624 ,  G02F1/136286 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/4908 ,  H01L29/78609 ,  H01L29/7869

Abstract: Example embodiments relate to a transistor, a method of manufacturing a transistor, and/or an electronic device including the transistor. In example embodiments, the transistor includes a first field effect transistor (FET) and a second FET connected in series to each other, wherein a first gate insulating film of the first FET and a second gate insulating film of the second FET have different leakage current characteristics or gate electric field characteristics.

Abstract translation: 示例性实施例涉及晶体管，制造晶体管的方法和/或包括晶体管的电子器件。 在示例实施例中，晶体管包括彼此串联连接的第一场效应晶体管（FET）和第二FET，其中第一FET的第一栅极绝缘膜和第二FET的第二栅极绝缘膜具有不同的漏电流 特性或栅极电场特性。

公开(公告)号：US09343534B2

公开(公告)日：2016-05-17

申请号：US14093153

申请日：2013-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang Kim ,  Sun-jae Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son

IPC: H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

Abstract translation: 根据示例性实施例，半导体材料可以包括锌，氮和氟。 半导体材料还可以包括氧。 半导体材料可以包括化合物。 例如，半导体材料可以包括氟氧化氮锌。 半导体材料可以包含含氟的氮氧化锌。 半导体材料可以包括氟化氮锌。 半导体材料可以作为薄膜晶体管（TFT）的沟道材料施加。

公开(公告)号：US09245957B2

公开(公告)日：2016-01-26

申请号：US14093121

申请日：2013-11-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-sang Kim ,  Sun-jae Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/24 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: According to example embodiments, a semiconductor material may include zinc, nitrogen, and fluorine. The semiconductor material may further include oxygen. The semiconductor material may include a compound. For example, the semiconductor material may include zinc fluorooxynitride. The semiconductor material may include zinc oxynitride containing fluorine. The semiconductor material may include zinc fluoronitride. The semiconductor material may be applied as a channel material of a thin film transistor (TFT).

公开(公告)号：US09087907B2

公开(公告)日：2015-07-21

申请号：US14162873

申请日：2014-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-suk Kim ,  Sun-jae Kim ,  Tae-sang Kim ,  Myung-kwan Ryu ,  Joon-seok Park ,  Kyoung-seok Son

IPC: H01L29/10 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/66742 ,  H01L29/78696

Abstract: According to example embodiments, a thin film transistor (TFT) includes a channel layer including zinc, nitrogen, and oxygen; an etch stop layer on the channel layer; source and drain electrodes respectively contacting both ends of the channel layer; a gate electrode corresponding to the channel layer; and a gate insulating layer between the channel layer and the gate electrode. The etch stop layer includes fluorine. The channel layer may be on the gate electrode.

Abstract translation: 根据示例性实施例，薄膜晶体管（TFT）包括包括锌，氮和氧的沟道层; 沟道层上的蚀刻停止层; 源极和漏极分别接触沟道层的两端; 对应于沟道层的栅电极; 以及沟道层和栅电极之间的栅极绝缘层。 蚀刻停止层包括氟。 沟道层可以在栅电极上。

公开(公告)号：US09076721B2

公开(公告)日：2015-07-07

申请号：US13770007

申请日：2013-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joon-seok Park ,  Sun-jae Kim ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Seok-jun Seo ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: A transistor includes a channel layer including an oxynitride semiconductor doped with at least one of hafnium (Hf) and zirconium (Zr), a source on one side portion of the channel layer and a drain on another side portion of the channel layer, a gate corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate.

Abstract translation: 晶体管包括沟道层，其包括掺杂有铪（Hf）和锆（Zr）中的至少一种的氧氮化物半导体，沟道层的一个侧部上的源极和沟道层的另一个侧部的漏极，栅极 对应于沟道层，以及沟道层和栅极之间的栅极绝缘层。