公开(公告)号：US20180219040A1

公开(公告)日：2018-08-02

申请号：US15666907

申请日：2017-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo CHOI ,  Kyung Ho LEE

IPC: H01L27/146 ,  H01L31/062 ,  H01L31/113

CPC classification number: H01L27/14627 ,  H01L27/14621 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14649 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/02162 ,  H01L31/02327 ,  H01L31/062 ,  H01L31/113 ,  H01L2224/48

Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

公开(公告)号：US20190230302A1

公开(公告)日：2019-07-25

申请号：US16122215

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung wook LIM ,  Sung Soo CHOI ,  Eun Sub SHIM ,  Jung Bin YUN ,  Sung-Ho CHOI

IPC: H04N5/359 ,  H01L27/146

Abstract: An image sensor includes a photoelectric converter to generate charges in response to incident light and to provide the generated charges to a first node, a transfer transistor to provide a voltage of the first node to a floating diffusion node based on a first control signal, a source follower transistor to provide a voltage of the floating diffusion node as a unit pixel output, a correlated double sampler (CDS) to receive the unit pixel output and to convert the unit pixel output into a digital code. The first control signal having first, second, and third voltages is maintained at the second voltage in a period between when the voltage of the first node is provided to the floating diffusion node and when the CDS is provided with the voltage of the first node as the unit pixel output.

公开(公告)号：US20190296072A1

公开(公告)日：2019-09-26

申请号：US16436447

申请日：2019-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo CHOI ,  Kyung Ho LEE

IPC: H01L27/146 ,  H01L31/113 ,  H01L31/0203 ,  H01L31/062 ,  H01L31/0232 ,  H01L31/0216

Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.

公开(公告)号：US20190296071A1

公开(公告)日：2019-09-26

申请号：US16436403

申请日：2019-06-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Soo CHOI ,  Kyung Ho LEE

IPC: H01L27/146 ,  H01L31/113 ,  H01L31/0203 ,  H01L31/062 ,  H01L31/0232 ,  H01L31/0216

Abstract: An image sensor and a method for fabricating the same are provided, in which the image sensor includes a substrate including a first sensing region having a photoelectric device therein, a boundary isolation film partitioning the first sensing region, an inner reflection pattern film within the substrate in the sensing region, an infrared filter on the substrate, and a micro lens on the infrared filter.