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    METHOD FOR FORMING PATTERNS OF SEMICONDUCTOR DEVICE USING SADP PROCESS
    7.
    发明申请
    METHOD FOR FORMING PATTERNS OF SEMICONDUCTOR DEVICE USING SADP PROCESS 有权
    使用SADP工艺形成半导体器件的图案的方法

    公开(公告)号：US20140273441A1

    公开(公告)日：2014-09-18

    申请号：US13841037

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae-Soo Kim ,  Yong-Min Cho

    IPC: H01L21/308 ,  H01L21/283

    CPC classification number: H01L21/283 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: To fabricate patterns of a semiconductor device, a mask film is formed on a substrate. A plurality of first patterns and a plurality of second patterns are formed on the mask film. The plurality of first patterns is spaced apart from each other at a first distance. The plurality of second patterns is spaced apart from each other at a second distance. The second distance is different from the first distance. A spacer film is conformally formed on the plurality of first patterns and the plurality of second patterns to a predetermined thickness. The spacer film fills spaces between the plurality of second patterns. A part of the spacer film is partially removed to form a plurality of spacer film patterns are formed on side walls of the plurality of the first patterns. The plurality of first patterns and the plurality of second patterns are removed. A plurality of patterns is formed on the substrate using the plurality of spacer film as a mask.

    Abstract translation: 为了制造半导体器件的图案，在衬底上形成掩模膜。 在掩模膜上形成多个第一图案和多个第二图案。 多个第一图案在第一距离处彼此间隔开。 多个第二图案在第二距离处彼此间隔开。 第二距离与第一距离不同。 间隔膜在多个第一图案和多个第二图案上共形地形成为预定厚度。 间隔膜填充多个第二图案之间的空间。 间隔膜的一部分被部分地去除以形成多个间隔膜图案，形成在多个第一图案的侧壁上。 去除多个第一图案和多个第二图案。 使用多个间隔膜作为掩模在基板上形成多个图案。

    SEMICONDUCTOR DEVICE WITH DUMMY LINES
    8.
    发明申请
    SEMICONDUCTOR DEVICE WITH DUMMY LINES 有权
    半导体器件与DUMMY线

    公开(公告)号：US20140264892A1

    公开(公告)日：2014-09-18

    申请号：US13840694

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae-Soo Kim ,  Byung-Hee Kim

    IPC: H01L23/00

    CPC classification number: H01L23/522 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/585 ,  H01L27/0207 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a first main strap, a second main strap, a plurality of first sub straps, a plurality of second sub straps, and a plurality of dummy lines. The first main strap is extended in a first direction. The second main strap is extended in the first direction. A plurality of first sub straps is branched from the first main strap. The plurality of second sub straps is branched from the second main strap. The plurality of dummy lines is positioned between the first main strap and the second main strap. Each of the plurality of dummy lines is positioned between each of the plurality of first sub straps and each of the plurality of second sub straps. Each of the dummy lines is spaced apart from the first main strap, the second main strap, each of the first sub straps and each of the second sub straps.

    Abstract translation: 半导体器件包括第一主带，第二主带，多个第一子带，多个第二子带和多个虚线。 第一主带在第一方向延伸。 第二主带在第一个方向延伸。 多个第一子带从第一主带分支。 多个第二子带从第二主带分支。 多个假线位于第一主带和第二主带之间。 多个虚拟线中的每一个位于多个第一子带中的每一个与多个第二子带中的每一个之间。 每条虚线与第一主带，第二主带，每个第一子带和每个第二子带间隔开。

    Method for forming patterns of semiconductor device using SADP process
    9.
    发明授权
    Method for forming patterns of semiconductor device using SADP process 有权
    使用SADP工艺形成半导体器件图案的方法

    公开(公告)号：US09093378B2

    公开(公告)日：2015-07-28

    申请号：US13841037

    申请日：2013-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae-Soo Kim ,  Yong-Min Cho

    IPC: H01L21/308 ,  H01L21/283 ,  H01L21/033 ,  H01L21/311 ,  H01L23/522 ,  H01L49/02

    CPC classification number: H01L21/283 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/76816 ,  H01L23/5223 ,  H01L28/60 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: To fabricate patterns of a semiconductor device, a mask film is formed on a substrate. A plurality of first patterns and a plurality of second patterns are formed on the mask film. The plurality of first patterns is spaced apart from each other at a first distance. The plurality of second patterns is spaced apart from each other at a second distance. The second distance is different from the first distance. A spacer film is conformally formed on the plurality of first patterns and the plurality of second patterns to a predetermined thickness. The spacer film fills spaces between the plurality of second patterns. A part of the spacer film is partially removed to form a plurality of spacer film patterns are formed on side walls of the plurality of the first patterns. The plurality of first patterns and the plurality of second patterns are removed. A plurality of patterns is formed on the substrate using the plurality of spacer film as a mask.

    Abstract translation: 为了制造半导体器件的图案，在衬底上形成掩模膜。 在掩模膜上形成多个第一图案和多个第二图案。 多个第一图案在第一距离处彼此间隔开。 多个第二图案在第二距离处彼此间隔开。 第二距离与第一距离不同。 间隔膜在多个第一图案和多个第二图案上共形地形成为预定厚度。 间隔膜填充多个第二图案之间的空间。 间隔膜的一部分被部分地去除以形成多个间隔膜图案，形成在多个第一图案的侧壁上。 去除多个第一图案和多个第二图案。 使用多个间隔膜作为掩模在基板上形成多个图案。

    Semiconductor device with dummy lines
    10.
    发明授权
    Semiconductor device with dummy lines 有权
    具有虚线的半导体器件

    公开(公告)号：US08963332B2

    公开(公告)日：2015-02-24

    申请号：US13840694

    申请日：2013-03-15

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae-Soo Kim ,  Byung-Hee Kim

    IPC: H01L23/48 ,  H01L23/522 ,  H01L27/02 ,  H01L23/528 ,  H01L23/58

    CPC classification number: H01L23/522 ,  H01L23/5223 ,  H01L23/528 ,  H01L23/585 ,  H01L27/0207 ,  H01L28/86 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor device includes a first main strap, a second main strap, a plurality of first sub straps, a plurality of second sub straps, and a plurality of dummy lines. The first main strap is extended in a first direction. The second main strap is extended in the first direction. A plurality of first sub straps is branched from the first main strap. The plurality of second sub straps is branched from the second main strap. The plurality of dummy lines is positioned between the first main strap and the second main strap. Each of the plurality of dummy lines is positioned between each of the plurality of first sub straps and each of the plurality of second sub straps. Each of the dummy lines is spaced apart from the first main strap, the second main strap, each of the first sub straps and each of the second sub straps.

    Abstract translation: 半导体器件包括第一主带，第二主带，多个第一子带，多个第二子带和多个虚线。 第一主带在第一方向延伸。 第二主带在第一个方向延伸。 多个第一子带从第一主带分支。 多个第二子带从第二主带分支。 多个假线位于第一主带和第二主带之间。 多个虚拟线中的每一个位于多个第一子带中的每一个与多个第二子带中的每一个之间。 每条虚线与第一主带，第二主带，每个第一子带和每个第二子带间隔开。

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