公开(公告)号：US11982980B2

公开(公告)日：2024-05-14

申请号：US17230275

申请日：2021-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Kim ,  Sanghoon Myung ,  Wonik Jang ,  Yongwoo Jeon ,  Kanghyun Baek ,  Jisu Ryu ,  Changwook Jeong

IPC: G05B13/04 ,  G05B13/02 ,  G06N3/045 ,  H01L27/02

CPC classification number: G05B13/042 ,  G05B13/027 ,  G06N3/045 ,  H01L27/0207

Abstract: According to an aspect of the present inventive concept, a simulation method for a semiconductor fabrication process includes obtaining, as input data, process parameters for controlling a semiconductor process of manufacturing semiconductor devices, or design parameters representing a structure of the semiconductor devices, or both the process parameters and the design parameters; generating predictive data for electrical characteristics of the semiconductor devices using a machine learning model based on the input data; generating reference data for the electrical characteristics of the semiconductor devices using a simulation tool based on the input data; and training the machine learning model using the predictive data and the reference data.

公开(公告)号：US11775840B2

公开(公告)日：2023-10-03

申请号：US16909132

申请日：2020-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonik Jang ,  Sanghoon Myung ,  Changwook Jeong ,  Sunghee Lee

IPC: G06N3/088 ,  G06N3/045

CPC classification number: G06N3/088 ,  G06N3/045

Abstract: A non-transitory computer-readable medium storing a program code including an image generation model, which when executed, causes a processor to input input data including sampling data of some of a plurality of semiconductor dies of a wafer to a generator network of the image generation model and output a wafer map indicating the plurality of semiconductor dies, and to input the wafer map output from the generator network to a discriminator network of the image generation model and discriminate the wafer map.

公开(公告)号：US20220207393A1

公开(公告)日：2022-06-30

申请号：US17468819

申请日：2021-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Naoto Umezawa ,  Changwook Jeong ,  Jisu Ryu ,  Kyu Hyun Lee ,  Jinyoung Lim ,  Wonik Jang ,  In Huh

IPC: G06N5/04 ,  G06N5/02

Abstract: Disclosed are methods of predicting semiconductor material properties and methods of testing semiconductor devices using the same. The prediction method comprises preparing a machine learning model that is trained with a training system and using the machine learning model to predict material properties of a target system. The machine learning model is represented as a function of material properties with respect to a descriptor. The descriptor is calculated from unrelaxed charge density (UCD) that is represented by summation of atomic charge density (ACD) of single atoms.