公开(公告)号：US11982980B2

公开(公告)日：2024-05-14

申请号：US17230275

申请日：2021-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwoo Kim ,  Sanghoon Myung ,  Wonik Jang ,  Yongwoo Jeon ,  Kanghyun Baek ,  Jisu Ryu ,  Changwook Jeong

IPC: G05B13/04 ,  G05B13/02 ,  G06N3/045 ,  H01L27/02

CPC classification number: G05B13/042 ,  G05B13/027 ,  G06N3/045 ,  H01L27/0207

Abstract: According to an aspect of the present inventive concept, a simulation method for a semiconductor fabrication process includes obtaining, as input data, process parameters for controlling a semiconductor process of manufacturing semiconductor devices, or design parameters representing a structure of the semiconductor devices, or both the process parameters and the design parameters; generating predictive data for electrical characteristics of the semiconductor devices using a machine learning model based on the input data; generating reference data for the electrical characteristics of the semiconductor devices using a simulation tool based on the input data; and training the machine learning model using the predictive data and the reference data.

公开(公告)号：US11693386B2

公开(公告)日：2023-07-04

申请号：US16992919

申请日：2020-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeho Kim ,  Kanghyun Baek ,  Kwanghee Lee ,  Yongwoo Jeon ,  Uihui Kwon ,  Yoonsuk Kim

IPC: G05B19/4097 ,  G06N20/00

CPC classification number: G05B19/4097 ,  G06N20/00 ,  G05B2219/45031

Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.

公开(公告)号：US20210063999A1

公开(公告)日：2021-03-04

申请号：US16992919

申请日：2020-08-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeho KIM ,  Kanghyun Baek ,  Kwanghee LEE ,  Yongwoo Jeon ,  Uihui KWON ,  Yoonsuk Kim

IPC: G05B19/4097 ,  G06N20/00

Abstract: A method of guiding a semiconductor manufacturing process includes receiving semiconductor manufacturing process data corresponding to a target semiconductor product, generating first semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a technology computer-aided design (TCAD) model trained through machine learning based on training data including TCAD simulation data, generating second semiconductor characteristic data corresponding to the semiconductor manufacturing process data by using a compact model generated based on information of measurement of at least one semiconductor characteristic of a first semiconductor product, generating, based on the first semiconductor characteristic data and the second semiconductor characteristic data, a plurality of process policies respectively corresponding to a plurality of strategic references, by using a plurality of strategy models; and providing a final process policy corresponding to the target semiconductor product based on the plurality of process policies.