SEMICONDUCTOR CHIP INCLUDING HEAT RADIATION PORTION AND METHOD OF FABRICATING THE SEMICONDUCTOR CHIP
    1.
    发明申请
    SEMICONDUCTOR CHIP INCLUDING HEAT RADIATION PORTION AND METHOD OF FABRICATING THE SEMICONDUCTOR CHIP 审中-公开
    包括热辐射部分的半导体芯片和制造半导体芯片的方法

    公开(公告)号:US20140015118A1

    公开(公告)日:2014-01-16

    申请号:US13834091

    申请日:2013-03-15

    Abstract: A semiconductor chip includes a semiconductor substrate including a first surface and a second surface, an integrated circuit (IC) on the first surface of the semiconductor substrate, and a heat radiation portion on the second surface of the semiconductor substrate. The heat radiation portion includes heat radiation patterns in a direction perpendicular to the second surface, and a heat radiation layer on upper portions of the heat radiation patterns. The heat radiation patterns include a plurality of recesses and a plurality of protrusions and the heat radiation layer includes a metal material and has a flat upper surface.

    Abstract translation: 半导体芯片包括具有第一表面和第二表面的半导体衬底,在半导体衬底的第一表面上的集成电路(IC)和半导体衬底的第二表面上的散热部分。 热辐射部分包括在垂直于第二表面的方向上的散热图案,以及在散热图案的上部上的散热层。 散热图案包括多个凹部和多个突起,并且散热层包括金属材料并具有平坦的上表面。

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