Abstract:
A semiconductor chip includes a semiconductor substrate including a first surface and a second surface, an integrated circuit (IC) on the first surface of the semiconductor substrate, and a heat radiation portion on the second surface of the semiconductor substrate. The heat radiation portion includes heat radiation patterns in a direction perpendicular to the second surface, and a heat radiation layer on upper portions of the heat radiation patterns. The heat radiation patterns include a plurality of recesses and a plurality of protrusions and the heat radiation layer includes a metal material and has a flat upper surface.
Abstract:
A gradation voltage generator for applying a gradation voltage according to gamma characteristics of a display panel includes a reference gamma selector that receives a maximum reference voltage, a minimum reference voltage, and a first reference voltage, and selects and outputs a maximum gamma voltage and a minimum gamma voltage from among voltages between the maximum reference voltage and the minimum reference voltage, wherein when the maximum reference voltage changes, the minimum gamma voltage is compensated by a difference the changed maximum reference voltage and the first reference voltage and a gamma curve controller that receives the maximum gamma voltage and the minimum gamma voltage, and generates and outputs a plurality of gradation voltages.
Abstract:
A display device includes a timing controller to generate a plurality of data control signals, a source driving unit to receive the plurality of data control signals from the timing controller and generate a data voltage, and a display panel to receive the data voltage and output an image, wherein the source driving unit transmits the data voltage to the display panel, through a plurality of data lines, with delays that are respectively different corresponding each frame.
Abstract:
A semiconductor chip includes a circuit region having an integrated semiconductor circuit on a semiconductor substrate, and a heat radiation member on at least a portion of a scribe lane region configured to at least partially surround the circuit region, the heat radiation member including a plurality of heat radiation fins that extend in a direction orthogonal to an upper surface of the semiconductor substrate.