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    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12159938B2

    公开(公告)日：2024-12-03

    申请号：US17711914

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyojin Kim ,  Sangmoon Lee ,  Jinbum Kim ,  Yongjun Nam

    IPC: H01L29/786 ,  H01L21/02 ,  H01L21/265 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

    Abstract: A semiconductor device includes; a first fin vertically protruding from a substrate and extending in a first horizontal direction, a second fin vertically protruding from the substrate, an isolation layer contacting side surfaces of the first fin and the second fin, a first lower barrier layer on the first fin, a second lower barrier layer on the second fin, source/drain regions spaced apart in the first horizontal direction on the first lower barrier layer, channel layers disposed between the source/drain regions and vertically spaced apart on the first barrier layer, a gate structure intersecting the first lower barrier layer, surrounding each of the channel layers, and extending in a second horizontal direction, an upper barrier layer on the second lower barrier layer, and first semiconductor layers and second semiconductor layers stacked on the upper barrier layer.

    SEMICONDUCTOR DEVICE
    3.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240170554A1

    公开(公告)日：2024-05-23

    申请号：US18511553

    申请日：2023-11-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyojin Kim ,  Jinbum Kim ,  Sangmoon Lee ,  Dongwoo Kim ,  Sungmin Kim ,  Yongjun Nam ,  Ingeon Hwang

    IPC: H01L29/423 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

    CPC classification number: H01L29/42392 ,  H01L29/0673 ,  H01L29/0847 ,  H01L29/66545 ,  H01L29/775 ,  H01L29/78696

    Abstract: A semiconductor device is provided. The semiconductor device includes: an active pattern extending in a first direction on a substrate; channel layers arranged on the active pattern; a gate structure crossing the active pattern, and surrounding the plurality of channel layers, the gate structure extending in a second direction that crosses the first direction; and source/drain regions provided on the active pattern on both sides of the gate structure, and including a first epitaxial layer connected to each of side surfaces of the channel layers, and a second epitaxial layer provided on the first epitaxial layer and having a composition different from that of the first epitaxial layer. Each of the side surfaces of the plurality of channel layers has a crystal plane of (111) or (100). The first epitaxial layer extends in the second direction and has a first thickness in the first direction that is substantially constant.

    INTEGRATED CIRCUIT DEVICES
    4.
    发明公开
    INTEGRATED CIRCUIT DEVICES 审中-公开

    公开(公告)号：US20240322039A1

    公开(公告)日：2024-09-26

    申请号：US18421001

    申请日：2024-01-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyojin Kim ,  Jinbum Kim ,  Sangmoon Lee ,  Yongjun Nam ,  Ingeon Hwang

    IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

    CPC classification number: H01L29/7848 ,  H01L29/66439 ,  H01L29/66742 ,  H01L29/775 ,  H01L29/78696 ,  H01L29/42392

    Abstract: The integrated circuit device includes a fin-type active region extending in a first direction, a channel region on the fin-type active region, a gate line on the channel region and extending in a second direction, and a source/drain region on the fin-type active region and in contact with the channel region, wherein the source/drain region includes a plurality of semiconductor layers including a first semiconductor layer that includes a portion in contact with the channel region and a portion in contact with the fin-type active region, a second semiconductor layer on the first semiconductor layer, and a third semiconductor layer on the second semiconductor layer, a germanium (Ge) content ratio in the first semiconductor layer is greater than or equal to 10 at % and less than 100 at %, and the Ge content ratio in the first semiconductor layer decreases towards a boundary with the second semiconductor layer.

    INTEGRATED CIRCUIT DEVICE
    5.
    发明公开
    INTEGRATED CIRCUIT DEVICE 审中-公开

    公开(公告)号：US20240321885A1

    公开(公告)日：2024-09-26

    申请号：US18476688

    申请日：2023-09-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinbum Kim ,  Ingyu Jang ,  Sujin Jung ,  Gyeom Kim ,  Hyojin Kim ,  Yongjun Nam ,  Sangmoon Lee

    IPC: H01L27/092 ,  H01L21/8238

    CPC classification number: H01L27/092 ,  H01L21/823814 ,  H01L21/823871

    Abstract: An integrated circuit device includes a first transistor comprising a first conductivity type, which includes a first channel region and a first source/drain region, a second transistor comprising a second conductivity type, which includes a second channel region and a second source/drain region, a first contact structure that contacts the first source/drain region and comprising a first length, and the first contact structure extends from above the first source/drain region and beyond an uppermost surface of the first channel region by a first vertical distance, and a second contact structure that contacts the second source/drain region and having a second length that is greater than the first length, the second contact extends from above the second source/drain region and beyond an uppermost surface of the second channel region by a second vertical distance, which is greater than the first vertical distance.

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