公开(公告)号：US20240260477A1

公开(公告)日：2024-08-01

申请号：US18364619

申请日：2023-08-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon KIM ,  Hyeonwoo SEO ,  YoungJun CHO

IPC: H10N50/01 ,  H10B61/00 ,  H10N50/10

CPC classification number: H10N50/01 ,  H10B61/22 ,  H10N50/10

Abstract: A method of manufacturing a magnetic memory device may include forming a bottom electrode layer on a substrate; forming a block structure on the bottom electrode layer; performing a first deposition process on the bottom electrode layer to form a pinned magnetic layer, a tunnel barrier layer, and a free magnetic layer on the bottom electrode layer; performing a second deposition process on the free magnetic layer to form a capping layer on the free magnetic layer; and performing an etching process after forming a hard mask on the capping layer to form magnetic tunnel junction patterns. The first deposition process may include irradiating a first beam toward the substrate. The second deposition process may include irradiating a second beam toward the substrate. The second beam may have a greater angle than the first beam with respect to a normal line perpendicular to an upper surface of the substrate.

公开(公告)号：US20240249760A1

公开(公告)日：2024-07-25

申请号：US18593293

申请日：2024-03-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Whankyun KIM ,  Jeong-Heon PARK ,  Heeju SHIN ,  YoungJun CHO ,  Joonmyoung LEE ,  Junho JEONG

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

CPC classification number: G11C11/161 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.

公开(公告)号：US20230117646A1

公开(公告)日：2023-04-20

申请号：US17952808

申请日：2022-09-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Junho JEONG ,  YoungJun CHO

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a pinned magnetic pattern, a tunnel barrier pattern, a free magnetic pattern, a diffusion barrier pattern, a non-magnetic pattern and a capping pattern, which are sequentially stacked on a substrate. The diffusion barrier pattern includes a first non-magnetic metal and oxygen. The non-magnetic pattern includes a second non-magnetic metal and oxygen. An oxide formation energy of the first non-magnetic metal is lower than an oxide formation energy of the second non-magnetic metal.

公开(公告)号：US20220320418A1

公开(公告)日：2022-10-06

申请号：US17502411

申请日：2021-10-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Whankyun KIM ,  Joonmyoung LEE ,  Junho JEONG ,  Eunsun NOH ,  Jeong-Heon PARK ,  YoungJun CHO

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22

Abstract: A magnetic memory device including a substrate; a first and second magnetic pattern stacked on the substrate; a tunnel barrier pattern between the first and second magnetic pattern; a bottom electrode between the substrate and the first magnetic pattern; a seed pattern between the bottom electrode and the first magnetic pattern; and a diffusion barrier pattern between the bottom electrode and the seed pattern, wherein a bottom surface of the at least one diffusion barrier pattern is in contact with a top surface of the bottom electrode, and a top surface of the at least one diffusion barrier pattern is in contact with a bottom surface of the seed pattern, the at least one diffusion barrier pattern includes a non-magnetic metal, or an alloy of the non-magnetic metal and a non-metal element, and the non-magnetic metal includes Ta, W, Nb, Ti, Cr, Zr, Hf, Mo, Al, Mg, or V.