公开(公告)号：US20240145288A1

公开(公告)日：2024-05-02

申请号：US18323719

申请日：2023-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngbok LEE ,  Yihwan KIM ,  Seongkeun CHO ,  Sangchul HAN

IPC: H01L21/683 ,  C23C16/458

CPC classification number: H01L21/6833 ,  C23C16/4583

Abstract: A substrate processing apparatus includes a chamber providing a space where a semiconductor process is performed on a semiconductor substrate, a substrate plate configured to support the semiconductor substrate, the substrate plate having a central region and a peripheral region surrounding the central region, a central embossing pattern on the central region and configured to support a central portion of the semiconductor substrate, a plurality of first embossing patterns radially arranged around the central embossing pattern on the peripheral region, each of the plurality of first embossing patterns extending radially outward from the central embossing pattern with a first length, and a plurality of second embossing patterns respectively provided between the first embossing patterns on the peripheral region, each of the plurality of second embossing patterns extending radially outward from the central embossing pattern with a second length that is less than the first length.

公开(公告)号：US20240429084A1

公开(公告)日：2024-12-26

申请号：US18409082

申请日：2024-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngbok LEE ,  Sangchul HAN ,  Yihwan KIM ,  Yeontae KIM ,  Namjin CHO

IPC: H01L21/683 ,  H01L21/67

Abstract: A substrate processing apparatus that includes a mounting table including an insulator having a loading surface; a gas distribution unit including injection holes; and a gas supply unit that supplies process gas. An electrode and a heater are embedded in the insulator, and a dielectric layer covers the loading surface. The dielectric layer includes a lower material layer, an intermediate material layer, and an upper material layer. The intermediate material layer has a third thickness, greater than each of a first thickness of the lower material layer and a second thickness of the upper material layer. The intermediate material layer has a third dielectric constant, greater than each of a first dielectric constant of the lower material layer and a second dielectric constant of the upper material layer.