摘要:
The present invention relates to a column redundancy circuit for a semiconductor memory whose memory array is divided into a plurality of array units to be properly operated at a high frequency. The plurality of array units in the memory array include a plurality of normal memory cells and a plurality of redundancy memory cells. The normal data stored in the normal memory cells and the redundancy data stored in the redundancy memory cells are outputted to a switch unit. A column redundancy unit outputs a redundancy enable signal according to a column address, a row address and a fuse short state. According to the logical state of the redundancy enable signal, the switch unit selects the normal data or redundancy data from the memory array, and outputs it to a main amplifier.
摘要:
The present invention relates to a column redundancy circuit for a semiconductor memory which can facilitate a high integration semiconductor circuit whose memory array is divided into a plurality of array units to be properly operated at a high frequency. The plurality of array units in the memory array include a plurality of normal memory cells and a plurality of redundancy memory cells. The normal data stored in the plurality of normal memory cells and the redundancy data stored in the plurality of redundancy memory cells are outputted through a local normal input/output line and a local redundancy input/output line, respectively. The column redundancy unit outputs a redundancy enable signal according to a column address, a row address, and a state of a fuse. The normal data stored in the plurality of normal memory cells or the redundancy data stored in the plurality of redundancy memory cells is selected according to a logical state of the redundancy enable signal, and outputted to a main amplifier via a global input/output line.
摘要:
The present invention relates to a column redundancy circuit for a semiconductor memory which can facilitate a high integration semiconductor circuit whose memory array is divided into a plurality of array units to be properly operated at a high frequency. The plurality of array units in the memory array include a plurality of normal memory cells and a plurality of redundancy memory cells. The redundancy data stored in the redundancy memory cells are outputted to a first main amplifier, and the normal data stored in the normal memory cells are outputted to a second main amplifier. A column redundancy unit outputs a redundancy enable signal according to a column address, a row address and a fuse short state. According to the logical state of the redundancy enable signal, the switch unit selects the redundancy data from the first main amplifier or the normal data from the second amplifier, and outputs it to a data output buffer.
摘要:
An analog mixed digital DLL includes a digital mode controller and an analog mode controller. The digital mode controller compares phases of delay clock signals outputted from a plurality of delay blocks and a first clock signal, detects an initial locking point, selects one delay clock signal at the detected initial locking point and controls the operation of the delay clocks. The analog mode controller compares the phase of the delay clock signal selected by the digital mode controller and the phase of a first clock signal. The analog mixed digital DLL can provide an externally inputted first control voltage or a second control voltage to the delay blocks in accordance with the digital and analog operation modes and implements a wide band frequency operation, has a short duration of jitters, prevents a multi-locking during a wide band frequency operation and decreases a current consumption.
摘要:
Disclosed is a method for implementing a symmetric key encryption algorithm against power analysis attacks, including: generating and storing an affine transform table; generating and storing a masked inversion table; and operating a masked S-box using the affine transform table and the masked inversion table.
摘要:
A width and a length of the electrostatic discharge (ESD) protection circuit are reduced by changing a connection structure of the electrostatic discharge protection circuit. The ESD protection circuit includes a plurality of gate electrodes disposed between odd signal lines and even signal lines adjacent to the odd signal lines among the signal lines; source/drain electrode pairs each disposed on a respective one of the gate electrodes to form a plurality of transistors; and connection nodes parallel to the source/drain electrode pairs, each connection node adjacent to a respective one of the source/drain electrodes pairs and on a respective one of the gate electrodes, wherein each of the connection nodes is directly connected to the source/drain electrode pair of an adjacent transistor and the gate electrode formed below the source/drain electrode through a contact part.
摘要:
A width and a length of the electrostatic discharge (ESD) protection circuit are reduced by changing a connection structure of the electrostatic discharge protection circuit. The ESD protection circuit includes a plurality of gate electrodes disposed between odd signal lines and even signal lines adjacent to the odd signal lines among the signal lines; source/drain electrode pairs each disposed on a respective one of the gate electrodes to form a plurality of transistors; and connection nodes parallel to the source/drain electrode pairs, each connection node adjacent to a respective one of the source/drain electrodes pairs and on a respective one of the gate electrodes, wherein each of the connection nodes is directly connected to the source/drain electrode pair of an adjacent transistor and the gate electrode formed below the source/drain electrode through a contact part.
摘要:
An internal constant voltage control circuit for a semiconductor memory device includes a current source for generating voltage in accordance with current when power is turned on, a bias circuit for outputting a first bias voltage when power is turned on, a first level shifter for receiving the output voltage of the current source and outputting a first voltage, a second level shifter for receiving the output voltage of the bias circuit and outputting a second voltage, and a buffer for differentially amplifying the output voltage of the first level shifter and the output voltage of the second level shifter, and generating an internal voltage. The circuit decreases operation current by reducing an internal voltage during a low temperature operation and securing a timing margin between signals, thereby stabilizing a low temperature operation.
摘要:
A masking addition operation apparatus for prevention of a side channel attack, includes a random value generation unit generating a first random value for a first input, second random value for a second input, and a summation random value. The masking addition operation apparatus includes an operation part performing an operation on the first and second random values, a previous carry input, and first and second masked random values generated based on the first and second random values. The masking addition operation apparatus includes a carry generator generating a carry input using a result of the operation part; and a summation bit generator generating a summation bit using the summation random value, the first and second random values, the previous carry input and the first and second masked random values.
摘要:
The present invention relates to a telemedical stethoscope, which automatically diagnoses a disease, and records visually and auditorily, and stores the stethoscope data on a screen. The present invention enhances primary diagnosis and treatment effect for a patient by transmitting/receiving the data to/from a doctor at a medical center and by receiving a telemedicine service. In addition, the present invention transmits the data to a health management program so as to be used for personal healthcare and disease prognosis decision of a patient.