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公开(公告)号：US20220320340A1
公开(公告)日：2022-10-06
申请号：US17629802
申请日：2020-07-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Naoto GOTO , Naoki IKEZAWA , Masataka NAKADA , Ami SATO , Chieko MISAWA
IPC: H01L29/786 , H01L29/66
Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer. The semiconductor layer includes a first region, a pair of second regions, a pair of third regions, and a pair of fourth regions. The second regions sandwich the first region, the third regions sandwich the first region and the second regions, and the fourth regions sandwich the first region, the second regions, and the third regions. The first region includes a region overlapping with the first insulating layer and the conductive layer, the second regions and the third regions each include a region overlapping with the first insulating layer and not overlapping with the conductive layer, and the fourth regions overlap with neither the first insulating layer nor the conductive layer. A thickness of the first insulating layer in regions overlapping with the second regions is substantially equal to a thickness of the first insulating layer in a region overlapping with the first region. A thickness of the first insulating layer in regions overlapping with the third regions is smaller than the thickness of the first insulating layer in the regions overlapping with the second regions.
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公开(公告)号：US20150155387A1
公开(公告)日：2015-06-04
申请号：US14556769
申请日：2014-12-01
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiro KATAYAMA , Chieko MISAWA , Yuka YOKOYAMA , Hironobu TAKAHASHI , Kenichi OKAZAKI
IPC: H01L29/786 , H01L29/51 , H01L29/49
CPC classification number: H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L29/66969 , H01L29/78606
Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
Abstract translation: 提供了一种使用用于背板的氧化物半导体膜的高度可靠的半导体器件。 半导体器件包括第一导电膜，第一导电膜上的第一绝缘膜，在第一绝缘膜之上并与第一导电膜重叠的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及 一对第二导电膜通过包含在第二绝缘膜中的开口部与氧化物半导体膜电连接。 第二绝缘膜与载体在一对第二导电膜之间流动并与氧化物半导体膜的端部重叠的氧化物绝缘膜的区域重叠。
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公开(公告)号：US20250169180A1
公开(公告)日：2025-05-22
申请号：US18839759
申请日：2023-03-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yasuharu HOSAKA , Masami JINTYOU , Takahiro IGUCHI , Chieko MISAWA , Ami SATO , Masayoshi DOBASHI
Abstract: A semiconductor device having a high degree of integration is provided. The semiconductor device includes a first and a second transistor, and an insulating layer. The first transistor includes a source electrode, a drain electrode over the insulating layer over the source electrode, a first semiconductor layer in contact with a top surface of the source electrode, an inner wall of an opening provided in the insulating layer, and a top surface of the drain electrode, a first gate insulating layer in contact with a top surface and a side surface of the first semiconductor layer, and a first gate electrode over the first gate insulating layer that includes a region overlapping with the inner wall of the opening. The second transistor includes a second semiconductor layer over the insulating layer, the source electrode in contact with one of a top surface and a side surface of the second semiconductor layer, the drain electrode in contact with the other of the top surface and the side surface of the second semiconductor layer, a second gate insulating layer in contact with the top surface of the second semiconductor layer, a top surface and a side surface of the source electrode, and a top surface and a side surface of the drain electrode, and a second gate electrode over the second gate insulating layer. The first semiconductor layer is in contact with the second gate electrode.
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公开(公告)号：US20170194503A1
公开(公告)日：2017-07-06
申请号：US15462229
申请日：2017-03-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei Yamazaki , Masahiro KATAYAMA , Chieko MISAWA , Yuka YOKOYAMA , Hironobu TAKAHASHI , Kenichi OKAZAKI
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L29/66969 , H01L29/78606
Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.
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