摘要:
According to an embodiment, a memory system includes semiconductor memories each having a plurality of blocks; a first table; a receiving unit; a generating unit; a second table; and a writing unit. The first table includes a plurality of memory areas each associated with each block and in each of which defect information is stored. The generating unit generates a set of blocks by selecting one block to which data are to be written in each semiconductor memory based on an index number indicating one of a plurality of rows in the first table and the first table. In the second table, an index number and a channel number are stored for each logical block address in association with one another. When a write command is received by the receiving unit, the writing unit writes data to a block associated with a selected channel number among blocks constituting the set.
摘要:
According to an embodiment, a memory system includes semiconductor memories each having a plurality of blocks; a first table; a receiving unit; a generating unit; a second table; and a writing unit. The first table includes a plurality of memory areas each associated with each block and in each of which defect information is stored. The generating unit generates a set of blocks by selecting one block to which data are to be written in each semiconductor memory based on an index number indicating one of a plurality of rows in the first table and the first table. In the second table, an index number and a channel number are stored for each logical block address in association with one another. When a write command is received by the receiving unit, the writing unit writes data to a block associated with a selected channel number among blocks constituting the set.
摘要:
A memory controller includes a memory interface that has multiple channels and carries out writing into a nonvolatile memory through each of the channels, a data buffer, an ECC (error correcting code) encoder for applying an error correction encoding processing on write data which are to be written into the nonvolatile memory to generate ECC data, a channel allocation part for allocating the channels to the write data and the ECC data based on a write data format of the nonvolatile memory, a write data reception processing part that stores the write data in the data buffer and outputs the write data to the ECC encoder, and a channel scheduler for transferring the write data stored in the data buffer and the ECC data to the channels of the memory interface as allocated by the channel allocation part.
摘要:
A semiconductor storage device, a method of controlling the same, and an error correction system allow reduction in power consumption and circuit scale without detriment to error correction capability. An error correction code (ECC) circuit of a solid state drive (SSD) performs first error correction on read data using a first error correction code (Hamming code), and further performs second error correction on the result of the first error correction using a second error correction code (BHC code). Furthermore, the ECC circuit performs third error correction on the result of the second error correction using a third error correction code (RS code).
摘要:
A semiconductor storage device, a method of controlling the same, and an error correction system allow reduction in power consumption and circuit scale without detriment to error correction capability. An error correction code (ECC) circuit of a solid state drive (SSD) performs first error correction on read data using a first error correction code (Hamming code), and further performs second error correction on the result of the first error correction using a second error correction code (BHC code). Furthermore, the ECC circuit performs third error correction on the result of the second error correction using a third error correction code (RS code).
摘要:
A decoder device includes: a decoder that decodes data stored in a storage medium by performing error correction on the data, the error correction being capable of correcting code error and code erasure included in the data; a memory that stores a history of an address in the storage medium of a code included in the data, the code being detected to have the code error by the decoding unit; and a controller that controls the decoder to change a detail of the error correction based on the history stored in the memory.
摘要:
A memory controller includes a memory interface that has multiple channels and carries out writing into a nonvolatile memory through each of the channels, a data buffer, an ECC (error correcting code) encoder for applying an error correction encoding processing on write data which are to be written into the nonvolatile memory to generate ECC data, a channel allocation part for allocating the channels to the write data and the ECC data based on a write data format of the nonvolatile memory, a write data reception processing part that stores the write data in the data buffer and outputs the write data to the ECC encoder, and a channel scheduler for transferring the write data stored in the data buffer and the ECC data to the channels of the memory interface as allocated by the channel allocation part.
摘要:
A semiconductor storage device, a method of controlling the same, and an error correction system allow reduction in power consumption and circuit scale without detriment to error correction capability. An error correction code (ECC) circuit of a solid state drive (SSD) performs first error correction on read data using a first error correction code (Hamming code), and further performs second error correction on the result of the first error correction using a second error correction code (BHC code). Furthermore, the ECC circuit performs third error correction on the result of the second error correction using a third error correction code (RS code).
摘要:
To provide a Chien search device and a Chien search method capable of performing a Chien search process at a high speed. The Chien search device calculates an error position at the time of correcting an error included in data read from a nonvolatile memory, and includes a first processing unit that performs a search process of an error position in at least one-bit unit to an error-correction area of input data, and a second processing unit that processes at one time plural bits in an non-error-correction-target area of the input data.
摘要:
To provide a Chien search device and a Chien search method capable of performing a Chien search process at a high speed. The Chien search device calculates an error position at the time of correcting an error included in data read from a nonvolatile memory, and includes a first processing unit that performs a search process of an error position in at least one-bit unit to an error-correction area of input data, and a second processing unit that processes at one time plural bits in an non-error-correction-target area of the input data.