DISPLAY PANEL AND DISPLAY DEVICE
    1.
    发明申请
    DISPLAY PANEL AND DISPLAY DEVICE 审中-公开
    显示面板和显示设备

    公开(公告)号:US20120019740A1

    公开(公告)日:2012-01-26

    申请号:US13256627

    申请日:2009-10-16

    IPC分类号: G02F1/1335

    摘要: Disclosed is a liquid crystal display panel wherein the utilization efficiency of light can be improved, while suppressing deterioration of the contrast. Specifically, a color filter (17) of a liquid crystal display panel (10) comprises: a black matrix (21) which is provided with an opening (2a); a red phosphor layer (22) and a red filter layer (23) which are arranged within the opening (21a) in a red display region (R); a green phosphor layer (24) and a green filter layer (25) which are arranged within the opening (21a) in a green display region (G); and a transparent resin layer (26) and a blue filter layer (27) which are arranged within the opening (21a) in a blue display region (B) A light exit surface of the transparent resin layer (26) is provided with a plurality of projected portions (26c), and the transparent resin layer (26) has a refractive index different from that of the blue filter layer (27), which is in contact with the light exit surface. The transparent resin layer (26) is a light diffusion layer, and is capable of increasing the viewing angle of blue light.

    摘要翻译: 公开了一种液晶显示面板,其中可以在抑制对比度降低的同时提高光的利用效率。 具体地,液晶显示面板(10)的滤色器(17)包括:设置有开口(2a)的黑矩阵(21); 布置在红色显示区域(R)中的开口(21a)内的红色荧光体层(22)和红色滤色器层(23) 在绿色显示区域(G)中布置在开口(21a)内的绿色荧光体层(24)和绿色滤光层(25); 以及布置在蓝色显示区域(B)的开口(21a)内的透明树脂层(26)和蓝色滤色器层(27)。透明树脂层(26)的光出射面设置有多个 的突出部分(26c),并且透明树脂层(26)具有与与光出射表面接触的蓝色滤光层(27)的折射率不同的折射率。 透明树脂层(26)是光扩散层,能够增大蓝光的视野角。

    PHOTOELECTRIC TRANSDUCER
    5.
    发明申请
    PHOTOELECTRIC TRANSDUCER 审中-公开
    光电传感器

    公开(公告)号:US20120273911A1

    公开(公告)日:2012-11-01

    申请号:US13520126

    申请日:2010-12-17

    IPC分类号: H01L31/0232

    CPC分类号: H01L31/02327

    摘要: A photoelectric transducer (10) including: a semiconductor layer (13); and a photonic crystal (21) formed inside the semiconductor layer, the photonic crystal being formed by providing nanorods (19) inside the semiconductor layer, each of the nanorods having a refractive index lower than that of a medium of the semiconductor layer, the nanorods being provided two-dimensionally and periodically at a pitch of not less than λ/4 nor more than λ, where λ is a wavelength of a peak of resonance caused by the photonic crystal, the photoelectric transducer satisfying the following formula: 0.2QV≦Qα≦5.4QV where Qv is (a) a Q value which indicates a magnitude of an effect of resonance caused by coupling between the photonic crystal and an external world and (b) in proportion to a reciprocal of a coefficient κV indicating a strength of the coupling between the photonic crystal and the external world, and Qa is (a) a Q value which indicates a magnitude of an effect of resonance caused by the medium of the semiconductor layer and (b) in proportion to a reciprocal of a coefficient αa of light absorption by the medium of the semiconductor layer. This allows an increase in light absorption ratio of a photoelectric transducer including a photonic crystal structure.

    摘要翻译: 一种光电变换器(10),包括:半导体层(13); 和形成在所述半导体层内的光子晶体(21),所述光子晶体通过在所述半导体层内部提供纳米棒(19)形成,所述纳米棒的折射率低于所述半导体层的介质的折射率,所述纳米棒 以不小于λ/ 4的间距不大于λ的间隔二维和周期地设置,其中λ是由光子晶体引起的共振峰的波长,光电传感器满足下式:0.2QV≦̸Qα&nlE 其中Qv是(a)Q值,其表示由光子晶体和外部世界之间的耦合引起的谐振的影响的大小,以及(b)与系数的倒数成比例,kgr; V表示强度 的光子晶体与外界之间的耦合,Qa是(a)Q值,其表示由半导体层的介质引起的共振效应的大小,(b)与 由半导体层的介质的光吸收系数αa的倒数。 这允许包括光子晶体结构的光电变换器的光吸收率增加。

    PHOTOELECTRIC CONVERSION ELEMENT
    6.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT 审中-公开
    光电转换元件

    公开(公告)号:US20130105927A1

    公开(公告)日:2013-05-02

    申请号:US13520495

    申请日:2010-12-22

    IPC分类号: H01L31/0232

    摘要: A photoelectric conversion element (1) of the present invention includes: a photoelectric conversion layer (2); and a photonic crystal provided inside the photoelectric conversion layer (2) to provide a photonic band gap, the photonic crystal being designed such that nanorods (30) whose refraction index is smaller than that of a medium of the photoelectric conversion layer (2) are provided periodically inside the photoelectric conversion layer (2), and there are provided defects (31) to provide a defect level in the photonic band gap, when a wavelength of a resonance peak corresponding to the defect level is λ, the nanorods (30) are provided two-dimensionally with a pitch of not less than λ/7 and not more than λ/2, and a coefficient κV indicative of strength of coupling between the photonic crystal and the outside is substantially equal to a coefficient α of absorption of light by the photoelectric conversion layer (2).

    摘要翻译: 本发明的光电转换元件(1)包括:光电转换层(2); 和设置在光电转换层(2)内部以提供光子带隙的光子晶体,所述光子晶体被设计为使得其折射率小于光电转换层(2)的介质的折射率的纳米棒(30)是 周期性地设置在光电转换层(2)内,并且当与缺陷水平相对应的谐振峰值的波长为λ时,存在提供光子带隙中的缺陷水平的缺陷(31),纳米棒(30) 以不小于λ/ 7且不大于λ/ 2的间距二维地提供,并且指示光子晶体和外部之间的耦合强度的系数kappaV基本上等于光吸收系数α 通过光电转换层(2)。

    WAVELENGTH SELECTIVE REFLECTION ELEMENT, WAVELENGTH SELECTIVE REFLECTION UNIT, AND REFLECTIVE DISPLAY DEVICE
    7.
    发明申请
    WAVELENGTH SELECTIVE REFLECTION ELEMENT, WAVELENGTH SELECTIVE REFLECTION UNIT, AND REFLECTIVE DISPLAY DEVICE 审中-公开
    波长选择性反射元件,波长选择反射单元和反射显示器件

    公开(公告)号:US20120147456A1

    公开(公告)日:2012-06-14

    申请号:US13389560

    申请日:2010-05-12

    IPC分类号: G02F1/167

    CPC分类号: G02B26/001

    摘要: A wavelength selective reflection element according to the present invention includes: an upper transparent plate (12) on which a guide-mode resonant grating (11) is formed; a lower transparent plate (13) disposed facing the upper transparent plate (12); and MEMS switches (14) and (15) being microelectromechanical systems, provided on (i) a side of one edge of the upper transparent plate (12) and a corresponding one edge of the lower transparent plate (13) and (ii) a side of another edge of the substrate and a corresponding another edge of the transparent plate, the side of the another edge being a side of an edge of the upper transparent plate (12) and a corresponding edge of the lower transparent plate (13) which faces the side of the one edge. This allows for causing a change in a gap between the upper transparent plate (12) and the lower transparent plate (13), by driving at least one of the MEMS switches.

    摘要翻译: 根据本发明的波长选择反射元件包括:形成有导向模式谐振光栅(11)的上透明板(12); 面向所述上透明板(12)设置的下透明板(13); 和MEMS开关(14)和(15)是微机电系统,其设置在(i)上透明板(12)的一个边缘的一侧和下透明板(13)的对应的一个边缘,以及(ii) 所述基板的另一边缘的一侧和所述透明板的相应的另一边缘,所述另一边缘的侧面是所述上透明板(12)的边缘的侧面和所述下透明板(13)的相应边缘, 面对一边的一边。 这允许通过驱动至少一个MEMS开关来引起上透明板(12)和下透明板(13)之间的间隙的变化。

    REFLECTION TYPE DISPLAY DEVICE
    8.
    发明申请
    REFLECTION TYPE DISPLAY DEVICE 审中-公开
    反射型显示装置

    公开(公告)号:US20120140305A1

    公开(公告)日:2012-06-07

    申请号:US13390477

    申请日:2010-03-18

    IPC分类号: G02F1/01 G02B26/02 B82Y20/00

    摘要: A reflection type display device (10) includes: a plasmon resonance layer (32) in which metal nanoparticles (80) are dispersed; a band-pass filter (40); a light shutter (20); and a silicon solar cell layer (50a) being provided close to the plasmon resonance layer (32). The band-pass filter (40) and the light shutter (20) are provided so as to overlap the plasmon resonance layer (32) in planar view. The reflection type display device (10) performs display in such a manner that: the metal nanoparticles (80) allow light having a specific wavelength to pass through; the light is then reflected by the band-pass filter (40); and the light shutter (20) adjusts an intensity of the light thus reflected.

    摘要翻译: 反射型显示装置(10)包括:分散有金属纳米粒子(80)的等离子体共振层(32) 带通滤波器(40); 光闸(20); 以及靠近等离子共振层(32)设置的硅太阳能电池层(50a)。 带通滤波器(40)和光闸(20)设置成在平面视图中与等离子体共振层(32)重叠。 反射型显示装置(10)以如下方式进行显示:使金属纳米粒子(80)使具有特定波长的光通过; 然后光被带通滤光器(40)反射; 并且光快门(20)调节如此反射的光的强度。