公开(公告)号：US20100244182A1

公开(公告)日：2010-09-30

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US08551862B2

公开(公告)日：2013-10-08

申请号：US12685194

申请日：2010-01-11

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/30

CPC分类号： H01L21/84 ,  H01L21/76254 ,  H01L21/76256

摘要： To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated wafer 7 by forming a silicon film layer on a surface 4 of an insulating substrate 3 comprising the steps in the following order of: applying a surface activation treatment to both a surface 2 of a silicon wafer 1 or a silicon wafer 1 to which an oxide film is layered and a surface 4 of the insulating substrate 3 followed by laminating in an atmosphere of temperature exceeding 50° C. and lower than 300° C., applying a heat treatment to a laminated wafer 5 at a temperature of 200° C. to 350° C., and thinning the silicon wafer 1 by a combination of grinding, etching and polishing to form a silicon film layer.

摘要翻译： 为了提供一种制造层叠晶片的方法，在不降低最大热处理温度的情况下，不会降低最大热处理温度以及晶片的裂纹或芯片不会在不具有热膨胀系数差的不同材料制成的晶片之间实现强耦合， 发生。 一种通过在绝缘基板3的表面4上形成硅膜层来制造层压晶片7的方法，包括以下顺序的步骤：对硅晶片1或硅的表面2施加表面活化处理 叠层氧化膜的晶片1和绝缘基板3的表面4，然后在温度超过50℃且低于300℃的气氛中层压，在层叠晶片5上进行热处理 温度为200〜350℃，通过研磨，蚀刻和研磨的组合使硅晶片1变薄，形成硅膜层。

公开(公告)号：US08138064B2

公开(公告)日：2012-03-20

申请号：US12922569

申请日：2009-10-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/304

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： A method for producing a silicon film-transferred insulator wafer is disclosed. The method includes a surface activation step of performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer into which a hydrogen ion has been implanted to form a hydrogen ion-implanted layer; a bonding step that bonds the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; a first heating step that heats the bonded wafers; a grinding and/or etching step of grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers; a second heating step that heats the bonded wafers; and a detachment step to detach the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.

摘要翻译： 公开了一种用于制造硅膜转移绝缘体晶片的方法。 该方法包括对绝缘体晶片的表面和注入氢离子形成氢离子的单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理的表面活化步骤 植皮层 键合步骤，将氢离子注入表面结合到绝缘体晶片的表面以获得接合的晶片; 加热接合晶片的第一加热步骤; 研磨和/或蚀刻步骤，研磨和/或蚀刻接合晶片的单晶硅晶片侧的表面; 第二加热步骤，加热粘合的晶片; 以及通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击来分离氢离子注入层的分离步骤。

公开(公告)号：US20110014775A1

公开(公告)日：2011-01-20

申请号：US12922569

申请日：2009-10-29

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Yoshihiro Nojima

IPC分类号： H01L21/304

CPC分类号： H01L21/76254 ,  H01L21/76256

摘要： [PROBLEM] Provided is a method for producing an SOI wafer which the method can prevent occurrence of thermal strain, detachment, crack and the like attributed to a difference in thermal expansion coefficients between the insulating substrate and the SOI layer and also improve the uniformity of film thickness of the SOI layer.[MEANS FOR SOLVING THE PROBLEM] Provided is a method for producing an SOI wafer comprising steps of: performing a surface activation treatment on at least one of a surface of an insulator wafer and a hydrogen ion-implanted surface of a single crystal silicon wafer having a hydrogen ion-implanted layer; bonding the hydrogen ion-implanted surface to the surface of the insulator wafer to obtain bonded wafers; heating the bonded wafers at a first temperature; grinding and/or etching a surface of a single crystal silicon wafer side of the bonded wafers thus heated so as to thin the single crystal silicon wafer of the bonded wafers; heating the bonded wafers thus ground and/or etched at a second temperature which is higher the first temperature; and performing detachment at the hydrogen ion-implanted layer by applying a mechanical impact to the hydrogen ion-implanted layer of the bonded wafers thus heated at the second temperature.

摘要翻译： [问题]提供一种用于制造SOI晶片的方法，该方法可以防止由于绝缘基板和SOI层之间的热膨胀系数的差异而引起的热应变，剥离，裂纹等的发生，并且还提高了 SOI层的膜厚度。 解决问题的手段提供一种SOI晶片的制造方法，包括以下步骤：对绝缘体晶片的表面和具有单晶硅晶片的氢离子注入表面中的至少一个进行表面活化处理，所述单晶硅晶片具有 氢离子注入层; 将氢离子注入表面接合到绝缘体晶片的表面以获得接合晶片; 在第一温度下加热接合的晶片; 研磨和/或蚀刻如此加热的接合晶片的单晶硅晶片侧的表面，以使结合晶片的单晶硅晶片变薄; 加热接合的晶片，从而在第一温度较高的第二温度下进行研磨和/或蚀刻; 并且通过对在第二温度下加热的接合晶片的氢离子注入层施加机械冲击，在氢离子注入层处进行脱离。

公开(公告)号：US20090221131A1

公开(公告)日：2009-09-03

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/36

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US08030176B2

公开(公告)日：2011-10-04

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/46

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US20110104871A1

公开(公告)日：2011-05-05

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/762

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US08314006B2

公开(公告)日：2012-11-20

申请号：US12934788

申请日：2009-04-10

申请人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Yuji Tobisaka ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/187 ,  H01L21/76254

摘要： Provided is a method for manufacturing a bonded wafer with a good thin film over the entire substrate surface, especially in the vicinity of the lamination terminal point. The method for manufacturing a bonded wafer comprises at least the following steps of: forming an ion-implanted region by implanting a hydrogen ion or a rare gas ion, or the both types of ions from a surface of a first substrate which is a semiconductor substrate; subjecting at least one of an ion-implanted surface of the first substrate and a surface of a second substrate to be attached to a surface activation treatment; laminating the ion-implanted surface of the first substrate and the surface of the second substrate in an atmosphere with a humidity of 30% or less and/or a moisture content of 6 g/m3 or less; and a splitting the first substrate at the ion-implanted region so as to reduce thickness of the first substrate, thereby manufacturing a bonded wafer with a thin film on the second substrate.

摘要翻译： 提供一种在整个基板表面上，特别是在层叠终点附近制造具有良好薄膜的接合晶片的方法。 制造接合晶片的方法至少包括以下步骤：通过从作为半导体衬底的第一衬底的表面注入氢离子或稀有气体离子或两种离子形成离子注入区域 ; 对第一基板的离子注入表面和第二基板的表面中的至少一个进行表面活化处理; 将第一基板的离子注入表面和第二基板的表面在湿度为30％以下和/或6g / m 3以下的气氛中层压; 以及在离子注入区域处分裂第一衬底以便减小第一衬底的厚度，由此在第二衬底上制造具有薄膜的接合晶片。

公开(公告)号：US20110003462A1

公开(公告)日：2011-01-06

申请号：US12920363

申请日：2009-03-23

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Makoto Kawai ,  Yuji Tobisaka ,  Hiroshi Tamura

IPC分类号： H01L21/306

CPC分类号： H01L21/76254 ,  H01L21/30608

摘要： Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

摘要翻译： 提供一种SOI晶片的制造方法，其能够：有效地除去通过离子注入剥离法剥离的剥离面附近的离子注入层中存在的离子注入缺陷层; 确保基板的面内均匀性; 并且还实现成本降低和更高的吞吐量。 制造SOI晶片的方法至少包括以下步骤：将具有或不具有氧化物膜的硅晶片接合到处理晶片上以制备键合衬底，其中所述硅晶片具有通过注入氢离子形成的离子注入层和/ 或稀有气体离子进入硅晶片; 沿着离子注入层剥离硅晶片，从而将硅晶片转移到处理晶片上以产生剥离后的SOI晶片; 将剥离后的SOI晶片浸渍在氨 - 过氧化氢水溶液中; 在浸渍的剥离后的SOI晶片上，在900℃以上的温度下进行热处理，和/或通过CMP研磨10〜50nm来研磨浸渍的剥离后的SOI晶片的硅膜层。

公开(公告)号：US07749870B2

公开(公告)日：2010-07-06

申请号：US12383834

申请日：2009-03-27

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/322

CPC分类号： H01L21/76254 ,  Y10S438/964 ,  Y10S438/967

摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.

摘要翻译： 提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制 以简单方便的方式生成金属杂质和颗粒。 更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面， 方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工 的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。