公开(公告)号：US20150008545A1

公开(公告)日：2015-01-08

申请号：US14494688

申请日：2014-09-24

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Carrie W. Low ,  Jeremy Ryan Hui ,  Zhen Gu

IPC: B81B3/00

CPC classification number: B81B3/0062 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  G01C19/5712

Abstract: An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.

Abstract translation: 在包括至少一个半导体器件的衬底上形成器件。 该装置包括微机电系统（MEMS）装置，其包括形成在第一结构层上方的第一结构层的一部分和第二结构层的一部分中的至少一个。 第二结构层的厚度基本上大于第一结构层的厚度。 在至少一个实施例中，MEMS器件包括第二结构层的第一部分和第二结构层的第二部分。 在至少一个实施例中，MEMS器件还包括第二结构层的第一部分和第二结构层的第二部分之间的间隙。 在至少一个实施例中，间隙的宽度比第二结构层的厚度小至少一个数量级。

公开(公告)号：US09018715B2

公开(公告)日：2015-04-28

申请号：US13690112

申请日：2012-11-30

Applicant: Silicon Laboratories Inc.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  B81B7/00

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。

公开(公告)号：US09260290B2

公开(公告)日：2016-02-16

申请号：US14494688

申请日：2014-09-24

Applicant: Silicon Laboratories Inc.

Inventor： Emmanuel P. Quevy ,  Carrie W. Low ,  Jeremy Ryan Hui ,  Zhen Gu

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5712

CPC classification number: B81B3/0062 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  G01C19/5712

Abstract: An apparatus is formed on a substrate including at least one semiconductor device. The apparatus includes a microelectromechanical system (MEMS) device comprising at least one of a portion of a first structural layer and a portion of a second structural layer formed above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. In at least one embodiment, the MEMS device includes a first portion of the second structural layer and a second portion of the second structural layer. In at least one embodiment, the MEMS device further comprises a gap between the first portion of the second structural layer and the second portion of the second structural layer. In at least one embodiment, the gap has a width at least one order of magnitude less than the thickness of the second structural layer.

Abstract translation: 在包括至少一个半导体器件的衬底上形成器件。 该装置包括微机电系统（MEMS）装置，其包括形成在第一结构层上方的第一结构层的一部分和第二结构层的一部分中的至少一个。 第二结构层的厚度基本上大于第一结构层的厚度。 在至少一个实施例中，MEMS器件包括第二结构层的第一部分和第二结构层的第二部分。 在至少一个实施例中，MEMS器件还包括第二结构层的第一部分和第二结构层的第二部分之间的间隙。 在至少一个实施例中，间隙的宽度比第二结构层的厚度小至少一个数量级。

公开(公告)号：US20140151820A1

公开(公告)日：2014-06-05

申请号：US13690112

申请日：2012-11-30

Applicant: SILICON LABORATORIES INC.

Inventor： Roger T. Howe ,  Emmanuel P. Quevy ,  Zhen Gu

IPC: H01L23/31 ,  H01L21/56

CPC classification number: H01L23/3171 ,  B81B7/0038 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A technique for forming an encapsulated microelectromechanical system (MEMS) device includes forming an integrated circuit using a substrate, forming a barrier using the substrate, and forming a MEMS device using the substrate. The method includes encapsulating the MEMS device in a cavity. The barrier is disposed between the integrated circuit and the cavity and inhibits the integrated circuit from outgassing into the cavity. The barrier may be substantially impermeable to gas migration from the integrated circuit.

Abstract translation: 用于形成封装的微机电系统（MEMS）器件的技术包括使用衬底形成集成电路，使用衬底形成阻挡层，以及使用衬底形成MEMS器件。 该方法包括将MEMS器件封装在空腔中。 屏障设置在集成电路和空腔之间，并且阻止集成电路脱气进入空腔。 阻挡层可能基本上不可渗透从集成电路的气体迁移。