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    Method and non-transitory computer-readable storage medium and apparatus for reading data with optimization read voltage table
    3.
    发明授权
    Method and non-transitory computer-readable storage medium and apparatus for reading data with optimization read voltage table 有权

    公开(公告)号：US12175092B2

    公开(公告)日：2024-12-24

    申请号：US18080842

    申请日：2022-12-14

    Applicant: Silicon Motion, Inc.

    Inventor： Chun-Yi Chen ,  Hsiao-Te Chang

    IPC: G06F3/06

    Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for reading data with an optimization read voltage (RV) table. The method includes: determining one set of RVs for a designated memory-cell type according to a current environmental parameter of a NAND-flash module and content of the optimization RV table; and reading data on a page corresponding to the designated memory-cell type from the NAND-flash module with the set of RVs. The optimization RV table includes multiple records and each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT
    4.
    发明申请
    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT 审中-公开

    公开(公告)号：US20180012651A1

    公开(公告)日：2018-01-11

    申请号：US15679178

    申请日：2017-08-17

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C11/56 ,  G11C16/08 ,  G06F3/06 ,  G11C16/26

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A memory access module for performing memory access management of a storage device includes a plurality of storage cells. Each storage cell has a number of possible bit(s) directly corresponding to possible states of the storage cell. The memory access module further includes: sensing means for performing a plurality of sensing operations, wherein a first sensing operation corresponds to a first sensing voltage, and each subsequent sensing operation corresponds to a sensing voltage determined according to a result of the previous sensing operation; generating means for using the plurality of sensing operations to generate a first digital value and a second digital value of a storage cell; processing means for using the first and the second digital value to obtain soft information of a same bit stored in the storage cell; and decoding means for using the soft information to perform soft decoding.

    METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF
    5.
    发明申请
    METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF 有权
    执行存储器访问管理的方法及其相关的存储器件及其控制器

    公开(公告)号：US20130304977A1

    公开(公告)日：2013-11-14

    申请号：US13944866

    申请日：2013-07-17

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G06F3/06

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A method for performing memory access management includes: with regard to a same Flash cell of a Flash memory, receiving a first digital value outputted by the Flash memory, requesting the Flash memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the Flash cell, and a number of various possible states of the Flash cell correspond to a possible number of bit(s) stored in the Flash cell; based upon the second digital value, generating/obtaining soft information of the Flash cell, for use of performing soft decoding; and controlling the Flash memory to perform sensing operations by respectively utilizing a plurality of sensing voltages that are not all the same, in order to generate the first digital value and the second digital value.

    Abstract translation: 一种用于执行存储器存取管理的方法包括：关于闪速存储器的相同闪存单元，接收闪速存储器输出的第一数字值，请求闪速存储器输出至少一个第二数字值，其中第一数字值 并且所述至少一个第二数字值用于确定存储在所述闪存单元中的相同位的信息，并且所述闪存单元的多个可能状态的数量对应于所述闪存单元中存储的可能数量的位; 基于所述第二数字值，生成/获取所述闪存单元的软信息，以用于执行软解码; 以及通过分别利用不完全相同的多个感测电压来控制闪存以执行感测操作，以便产生第一数字值和第二数字值。

    Method for performing memory access management, and associated memory device and controller thereof
    8.
    发明授权
    Method for performing memory access management, and associated memory device and controller thereof 有权
    用于执行存储器访问管理的方法及其相关联的存储器件及其控制器

    公开(公告)号：US09239685B2

    公开(公告)日：2016-01-19

    申请号：US14327580

    申请日：2014-07-10

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C16/06 ,  G06F3/06 ,  G11C11/56 ,  G11C16/26

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A method for accessing a memory includes: utilizing a Flash memory to perform a plurality of sensing operations with a plurality of different sensing voltages respectively corresponding to the plurality of sensing operations; according to the plurality of sensing operations, generating a first digital value of a Flash cell of the Flash memory; according to the plurality of sensing operations and the first digital value, generating at least a second digital value of the Flash cell; and obtaining soft information of the Flash cell according to the second digital value. The first digital value and the second digital value are used for determining information of a same bit stored in the Flash cell, a number of possible bit(s) of the Flash cell directly corresponds to a number of possible states of the Flash cell, and the obtained soft information is used for performing soft decoding.

    Abstract translation: 一种用于访问存储器的方法包括：利用闪速存储器执行多个感测操作，所述感测操作具有分别对应于所述多个感测操作的多个不同感测电压; 根据所述多个感测操作，产生所述闪存的闪存单元的第一数字值; 根据所述多个感测操作和所述第一数字值，生成所述闪存单元的至少第二数字值; 并根据第二数字值获取闪存单元的软信息。 第一数字值和第二数字值用于确定存储在闪存单元中的相同位的信息，闪存单元的可能位的数量直接对应于闪存单元的可能状态的数量，以及 所获得的软信息用于执行软解码。

    Method for performing memory access management, and associated memory device and controller thereof
    9.
    发明授权
    Method for performing memory access management, and associated memory device and controller thereof 有权
    用于执行存储器访问管理的方法及其相关联的存储器件及其控制器

    公开(公告)号：US08867270B2

    公开(公告)日：2014-10-21

    申请号：US13944866

    申请日：2013-07-17

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C16/04

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A method for performing memory access management includes: with regard to a same Flash cell of a Flash memory, receiving a first digital value outputted by the Flash memory, requesting the Flash memory to output at least one second digital value, wherein the first digital value and the at least one second digital value are utilized for determining information of a same bit stored in the Flash cell, and a number of various possible states of the Flash cell correspond to a possible number of bit(s) stored in the Flash cell; based upon the second digital value, generating/obtaining soft information of the Flash cell, for use of performing soft decoding; and controlling the Flash memory to perform sensing operations by respectively utilizing a plurality of sensing voltages that are not all the same, in order to generate the first digital value and the second digital value.

    Abstract translation: 一种用于执行存储器存取管理的方法包括：关于闪速存储器的相同闪存单元，接收闪速存储器输出的第一数字值，请求闪速存储器输出至少一个第二数字值，其中第一数字值 并且所述至少一个第二数字值用于确定存储在所述闪存单元中的相同位的信息，并且所述闪存单元的多个可能状态的数量对应于所述闪存单元中存储的可能数量的位; 基于所述第二数字值，生成/获取所述闪存单元的软信息，以用于执行软解码; 以及通过分别利用不完全相同的多个感测电压来控制闪存以执行感测操作，以便产生第一数字值和第二数字值。

    FLASH MEMORY APPARATUS AND DATA ACCESS METHOD FOR FLASH MEMORY WITH REDUCED DATA ACCESS TIME
    10.
    发明申请
    FLASH MEMORY APPARATUS AND DATA ACCESS METHOD FOR FLASH MEMORY WITH REDUCED DATA ACCESS TIME 审中-公开
    具有减少数据访问时间的闪存存储器的闪存存储器和数据访问方法

    公开(公告)号：US20130326125A1

    公开(公告)日：2013-12-05

    申请号：US13909106

    申请日：2013-06-04

    Applicant: Silicon Motion Inc.

    Inventor： Hsiao-Te Chang ,  Chun-Yi Chen

    IPC: G06F12/02

    CPC classification number: G06F12/0246 ,  G06F2212/7203 ,  G11C2211/5641

    Abstract: A data access method for flash memory includes: receiving a first data from a host terminal by utilizing a flash memory controller; transmitting and writing the first data into a single-level cell of the flash memory form the flash memory controller; and when the flash memory controller receives a second data from the host terminal, utilizing the flash memory controller to execute a copy back program to merge at least a portion of the first data stored in the single-level cell into a multi-level cell.

    Abstract translation: 一种用于闪速存储器的数据存取方法包括：利用闪存控制器从主机终端接收第一数据; 将闪存控制器的第一数据发送和写入闪存的单级单元; 并且当所述闪速存储器控制器从所述主机终端接收到第二数据时，利用所述闪速存储器控制器执行复制程序以将存储在所述单级单元中的所述第一数据的至少一部分合并为多级单元。

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