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    MULTILAYER CERAMIC ELECTRONIC COMPONENT
    1.
    发明申请
    MULTILAYER CERAMIC ELECTRONIC COMPONENT 审中-公开

    公开(公告)号：US20200043657A1

    公开(公告)日：2020-02-06

    申请号：US16511030

    申请日：2019-07-15

    Applicant: TDK CORPORATION

    Inventor： Takuma ARIIZUMI ,  Toshihiko KANEKO ,  Nobuto MORIGASAKI ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  H01G4/005 ,  C04B35/468 ,  C04B35/49 ,  C04B35/628

    Abstract: The object of the present invention is to provide a multilayer ceramic electronic component having improved highly accelerated lifetime and specific permittivity. A multilayer ceramic electronic component comprising a multilayer body in which an internal electrode layer and a dielectric layer are stacked in alternating manner, wherein the dielectric layer comprises a dielectric ceramic composition having a main component expressed by a general formula ABO3 (A is Ba and the like, and B is Ti and the like) and a rare earth component R, a segregation phase including the rare earth component R exists in the dielectric layer, an area ratio of the segregation phases in a cross section along a stacking direction is 104 ppm to 961 ppm, and 96% or more of a total area of the segregation phases contact with the internal electrode layer.

    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE
    3.
    发明申请
    DIELECTRIC COMPOSITION, ELECTRONIC DEVICE, AND MULTILAYER ELECTRONIC DEVICE 有权

    公开(公告)号：US20220254569A1

    公开(公告)日：2022-08-11

    申请号：US17589206

    申请日：2022-01-31

    Applicant: TDK CORPORATION

    Inventor： Takuma ARIIZUMI ,  Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Toshihiko KANEKO ,  Yasuhiro ITO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.

    DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE
    4.
    发明申请
    DIELECTRIC CERAMIC COMPOSITION AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210304966A1

    公开(公告)日：2021-09-30

    申请号：US17195366

    申请日：2021-03-08

    Applicant: TDK CORPORATION

    Inventor： Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Dan SAKURAI ,  Takuma ARIIZUMI ,  Toshihiko KANEKO

    IPC: H01G4/12 ,  H01G4/30 ,  C04B35/468

    Abstract: A dielectric ceramic composition includes a barium titanate, an oxide of an R element, an oxide of an M element, and an oxide containing Si. The R element is one or more elements selected from Eu, Gd, Tb, Dy, Y, Ho, and Yb. The M element is one or more elements selected from Mg, Ca, Mn, V, and Cr. A ratio of an amount of the oxide of the R element in terms of R2O3 to an amount of the oxide containing Si in terms of SiO2 is 0.8:1 to 2.2:1. A ratio of an amount of the oxide of the M element in terms of MO to the amount of the oxide containing Si in terms of SiO2 is 0.2:1 to 1.8:1.50% or more of the number of dielectric particles constituting the dielectric ceramic composition is core-shell dielectric particles having a core-shell structure.

    DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE
    5.
    发明申请
    DIELECTRIC COMPOSITION AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210202169A1

    公开(公告)日：2021-07-01

    申请号：US17119212

    申请日：2020-12-11

    Applicant: TDK CORPORATION

    Inventor： Toshihiro IGUCHI ,  Nobuto MORIGASAKI

    IPC: H01G4/12

    Abstract: A dielectric composition includes main phases and Ca-RE-Si—O segregation phases. The main phases include a main component expressed by ABO3. “A” includes at least one selected from barium and calcium. “B” includes at least one selected from titanium and zirconium. “RE” represents at least one of rare earth elements. A molar ratio of (Si/Ca) is larger than one. A molar ratio of (Si/RE) is larger than one, provided that the molar ratio of (Si/RE) is a molar ratio of silicon included in the segregation phases to the rare earth elements included therein. An average length of major axes of the segregation phases is 1.30-2.80 times as large as an average particle size of the main phases. An average length of minor axes of the segregation phases is 0.21-0.48 times as large as an average particle size of the main phases.

    MULTILAYER ELECTRONIC DEVICE
    8.
    发明公开
    MULTILAYER ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240047136A1

    公开(公告)日：2024-02-08

    申请号：US18357505

    申请日：2023-07-24

    Applicant: TDK CORPORATION

    Inventor： Taku MURAKAMI ,  Nobuto MORIGASAKI ,  Takuma ARIIZUMI ,  Yoshitaka NAGASHIMA ,  Masato KIMURA

    IPC: H01G4/12 ,  H01G4/30

    CPC classification number: H01G4/1209 ,  H01G4/30

    Abstract: A multilayer electronic device includes an element body and a pair of external electrodes. The element body includes an interior region in which inner dielectric layers and internal electrode layers are alternately laminated and an exterior region located outside the interior region in its lamination direction. The pair of external electrodes exists on surfaces of the element body. Main-phase particles in the inner dielectric layers and outer dielectric layers of the exterior region include a main component having a perovskite crystal structure represented by a general formula of ABO3. r1

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