公开(公告)号：US20220385282A1

公开(公告)日：2022-12-01

申请号：US17538547

申请日：2021-11-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Cameron Wayne PHILLIPS ,  Wenchao QU ,  Tianhong YANG ,  Md Abidur RAHMAN

IPC: H03K17/0412 ,  H03K17/693

Abstract: A load switch includes a switch input, a switch output, a first field-effect transistor (FET), and a second FET. The switch input is adapted to be coupled to a controller output of a controller. The switch output is adapted to be coupled to a controller input of the controller. The first FET has a gate and a source. The gate of the first FET is coupled to the switch input. The second FET has a gate and a source. The gate of the second FET is coupled to the source of the first FET. The source of the second FET is coupled to the switch output.

公开(公告)号：US20190204361A1

公开(公告)日：2019-07-04

申请号：US15859470

申请日：2017-12-30

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Tikno HARJONO ,  Vijay KRISHNAMURTHY ,  Min CHU ,  Kuntal JOARDAR ,  Gary Eugene DAUM ,  Subrato ROY ,  Vinayak HEGDE ,  Ankur CHAUHAN ,  Sathish VALLAMKONDA ,  Md Abidur RAHMAN ,  Eung Jung KIM

IPC: G01R15/14 ,  H01L27/06 ,  H01L49/02 ,  H01L25/18 ,  H03K17/567

CPC classification number: G01R15/146 ,  H01L25/18 ,  H01L27/0629 ,  H01L28/20 ,  H03K17/567

Abstract: An electronic device comprises: a first semiconductor die; a power transistor integrated in the first semiconductor die, the power transistor comprising a gate, a first terminal, and a second terminal; a sense transistor integrated in the first semiconductor die, the sense transistor comprising a gate coupled to the gate of the power transistor, a first terminal, and a second terminal coupled to the second terminal of the power transistor; and a first resistor integrated in the first semiconductor die, the first resistor comprising a polysilicon section and a metal section coupled to the polysilicon section, the first resistor comprising a first terminal and a second terminal, wherein the first terminal of the first resistor is coupled to the first terminal of the sense transistor.