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    METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON DEVICE COMPRISING SAID PROCESSING METHOD
    2.
    发明公开
    METHOD FOR PROCESSING SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON DEVICE COMPRISING SAID PROCESSING METHOD 审中-公开

    公开(公告)号：US20240112917A1

    公开(公告)日：2024-04-04

    申请号：US18274856

    申请日：2022-02-08

    Applicant: TOKUYAMA CORPORATION

    Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Naoto NOMURA ,  Kohsuke NORO ,  Seiji TONO

    IPC: H01L21/306 ,  C09K13/00

    CPC classification number: H01L21/30604 ,  C09K13/00

    Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium.
    [Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

    SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICE AND METHOD FOR PROCESSING SILICON SUBSTRATE, EACH USING SAID ETCHING LIQUID
    3.
    发明公开
    SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICE AND METHOD FOR PROCESSING SILICON SUBSTRATE, EACH USING SAID ETCHING LIQUID 审中-公开

    公开(公告)号：US20230295499A1

    公开(公告)日：2023-09-21

    申请号：US18018362

    申请日：2021-07-29

    Applicant: TOKUYAMA CORPORATION

    Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

    IPC: C09K13/00 ,  H01L21/306

    CPC classification number: C09K13/00 ,  H01L21/30608

    Abstract: A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH− (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X− (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)

    ETCHING SOLUTION, METHOD FOR TREATING SUBSTRATE WITH THE ETCHING SOLUTION, AND METHOD FOR MANUFACTURING SEMICONDUTOR DEVICE
    4.
    发明公开
    ETCHING SOLUTION, METHOD FOR TREATING SUBSTRATE WITH THE ETCHING SOLUTION, AND METHOD FOR MANUFACTURING SEMICONDUTOR DEVICE 审中-公开

    公开(公告)号：US20240034933A1

    公开(公告)日：2024-02-01

    申请号：US18277177

    申请日：2023-03-01

    Applicant: TOKUYAMA CORPORATION

    Inventor： Manami OSHIO ,  Naoto NOMURA

    IPC: C09K13/04 ,  H01L21/311

    CPC classification number: C09K13/04 ,  H01L21/31111

    Abstract: Silicon carbonitride with excellent dielectric and/or other properties may be used in manufacturing semiconductor devices. The manufacturing often requires etching silicon carbonitride without etching silicon oxide, but there is no known etching solution that sufficiently selectively etches silicon carbonitride containing carbon compared with silicon nitride used for the same purpose. An object of the present invention is to provide: an etching solution with a high etching selectivity ratio of silicon carbonitride to silicon oxide; a method of treating a substrate, the method including a step of bringing the etching solution into contact with the substrate; and a method of manufacturing a semiconductor device, the method including the method of treating a substrate. The object is achieved by an etching solution for etching silicon carbonitride, the etching solution composed of a homogeneous solution containing phosphoric acid, water, and a cerium ion.

    SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICES AND METHOD FOR PROCESSING SUBSTRATES, EACH USING SAID ETCHING LIQUID
    7.
    发明公开
    SILICON ETCHING LIQUID, AND METHOD FOR PRODUCING SILICON DEVICES AND METHOD FOR PROCESSING SUBSTRATES, EACH USING SAID ETCHING LIQUID 审中-公开

    公开(公告)号：US20240124775A1

    公开(公告)日：2024-04-18

    申请号：US18268794

    申请日：2021-12-22

    Applicant: TOKUYAMA CORPORATION

    Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

    IPC: C09K13/00 ,  H01L21/306

    CPC classification number: C09K13/00 ,  H01L21/30608

    Abstract: A silicon etching solution contains: a quaternary ammonium hydroxide represented by the following Formula (1): R11R12R13R14N+·OH− (1) (in the formula, R11, R12, R13, and R14 are each independently an aryl group, a benzyl group, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group, the aryl group, or the benzyl group may have a hydroxy group); a quaternary ammonium salt represented by the following Formula (2) and having 11 to 20 carbon atoms in total: R21R22R23R24N+·X− (2) (in the formula, one of R21, R22, R23, and R24 is an alkyl group having 16 or less carbon atoms, which may have a substituent, each of the remaining three is an alkyl group having 1 or 2 carbon atoms, the alkyl group having 16 or less carbon atoms and the alkyl group having 1 or 2 carbon atoms may have a hydroxy group, and X is at least one selected from the group consisting of BF4, a fluorine atom, a chlorine atom, and a bromine atom); a polyhydroxy compound having 2 to 12 carbon atoms and having two or more hydroxy groups in a molecule; and water.

    SILICON ETCHING LIQUID CONTAINING AROMATIC ALDEHYDE
    8.
    发明申请
    SILICON ETCHING LIQUID CONTAINING AROMATIC ALDEHYDE 有权

    公开(公告)号：US20230136986A1

    公开(公告)日：2023-05-04

    申请号：US17973953

    申请日：2022-10-26

    Applicant: TOKUYAMA CORPORATION

    Inventor： Naoto NOMURA ,  Kosuke NORO ,  Yoshiki SEIKE ,  Manami OSHIO ,  Yuichiro KAWABATA ,  Seiji TONO

    IPC: H01L21/465

    Abstract: An object of the present invention is to provide an etching liquid having a high silicon etch selectivity with respect to silicon-germanium and a high long term stability at a processing temperature, in surface processing during the production of various semiconductor devices, especially various silicon composite semiconductor devices containing silicon-germanium, and the problem is solved by a silicon etching liquid containing an alkaline compound, an aldehyde compound, and water, the aldehyde compound being a water-soluble aromatic aldehyde.

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