公开(公告)号：US20220403242A1

公开(公告)日：2022-12-22

申请号：US17821490

申请日：2022-08-23

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2   (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.

公开(公告)号：US20240228428A1

公开(公告)日：2024-07-11

申请号：US18615802

申请日：2024-03-25

Applicant: TOKUYAMA CORPORATION

Inventor： Shoji TACHIBANA ,  Seiji TONO ,  Sumito ISHIZU ,  Yoshiaki YAMASHITA

IPC: C07C211/63

CPC classification number: C07C211/63

Abstract: A treatment liquid composition for semiconductor production including: a quaternary ammonium hydroxide; and a first organic solvent dissolving the quaternary ammonium hydroxide, the first organic solvent being a water-soluble organic solvent having a plurality of hydroxy groups, wherein a water content in the composition is no more than 1.0 mass % on the basis of the total mass of the composition; contents of Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, and Zn in the composition are each no more than 100 mass ppb on the basis of the total mass of the composition; and a content of Cl in the composition is no more than 100 mass ppb on the basis of the total mass of the composition.

公开(公告)号：US20240124775A1

公开(公告)日：2024-04-18

申请号：US18268794

申请日：2021-12-22

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30608

Abstract: A silicon etching solution contains: a quaternary ammonium hydroxide represented by the following Formula (1): R11R12R13R14N+·OH− (1) (in the formula, R11, R12, R13, and R14 are each independently an aryl group, a benzyl group, or an alkyl group having 1 to 4 carbon atoms, and the alkyl group, the aryl group, or the benzyl group may have a hydroxy group); a quaternary ammonium salt represented by the following Formula (2) and having 11 to 20 carbon atoms in total: R21R22R23R24N+·X− (2) (in the formula, one of R21, R22, R23, and R24 is an alkyl group having 16 or less carbon atoms, which may have a substituent, each of the remaining three is an alkyl group having 1 or 2 carbon atoms, the alkyl group having 16 or less carbon atoms and the alkyl group having 1 or 2 carbon atoms may have a hydroxy group, and X is at least one selected from the group consisting of BF4, a fluorine atom, a chlorine atom, and a bromine atom); a polyhydroxy compound having 2 to 12 carbon atoms and having two or more hydroxy groups in a molecule; and water.

公开(公告)号：US20230136986A1

公开(公告)日：2023-05-04

申请号：US17973953

申请日：2022-10-26

Applicant: TOKUYAMA CORPORATION

Inventor： Naoto NOMURA ,  Kosuke NORO ,  Yoshiki SEIKE ,  Manami OSHIO ,  Yuichiro KAWABATA ,  Seiji TONO

IPC: H01L21/465

Abstract: An object of the present invention is to provide an etching liquid having a high silicon etch selectivity with respect to silicon-germanium and a high long term stability at a processing temperature, in surface processing during the production of various semiconductor devices, especially various silicon composite semiconductor devices containing silicon-germanium, and the problem is solved by a silicon etching liquid containing an alkaline compound, an aldehyde compound, and water, the aldehyde compound being a water-soluble aromatic aldehyde.

公开(公告)号：US20240112917A1

公开(公告)日：2024-04-04

申请号：US18274856

申请日：2022-02-08

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Naoto NOMURA ,  Kohsuke NORO ,  Seiji TONO

IPC: H01L21/306 ,  C09K13/00

CPC classification number: H01L21/30604 ,  C09K13/00

Abstract: [Problem to be solved] Provided is a method for processing a substrate having high etching selectivity of silicon with respect to silicon-germanium and further having a high selection ratio of silicon with respect to a silicon oxide film and/or a silicon nitride film in surface processing when manufacturing various types of silicon devices, particularly various types of silicon composite semiconductor devices containing silicon-germanium.
[Solution] A method for processing a substrate includes: bringing an etching solution into contact with a substrate including a silicon film and a silicon-germanium film to perform etching; and selectively removing the silicon film, in which the etching solution contains an organic alkali and water and has a dissolved oxygen concentration of 0.20 ppm or less.

公开(公告)号：US20230295499A1

公开(公告)日：2023-09-21

申请号：US18018362

申请日：2021-07-29

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30608

Abstract: A silicon etching liquid which is characterized by containing a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium salt represented by formula (2) and water, and which is also characterized in that the concentration of the quaternary ammonium salt represented by formula (2) is more than 1% by mass but not more than 50% by mass. (1): R1R2R3R4N+·OH− (In formula (1), R1, R2, R3 and R4 may be the same groups or different groups, and each represents an optionally substituted alkyl group, aryl group or a benzyl group.) (2): R5R6R7R8N+·X− (In formula (2), R5, R6, R7 and R8 may be the same groups or different groups, and each represents an optionally substituted alkyl group having from 1 to 16 carbon atoms; and X represents BF4, a fluorine atom, a chlorine atom or a bromine atom.)

公开(公告)号：US20220010206A1

公开(公告)日：2022-01-13

申请号：US17294148

申请日：2020-02-13

Applicant: TOKUYAMA CORPORATION

Inventor： Takafumi SHIMODA ,  Yuki KIKKAWA ,  Takayuki NEGISHI ,  Seiji TONO ,  Tomoaki SATO

IPC: C09K13/06 ,  H01L21/3213

Abstract: The present invention provides a treatment liquid for treating a semiconductor wafer in a semiconductor formation process, the treatment liquid including: (A) hypochlorite ion; (B) a pH buffer; and (C) a tetraalkylammonium ion represented by the following formula (1): (wherein each of R1, R2, R3 and R4 is independently an alkyl group having carbon number from 1 to 20).

公开(公告)号：US20230287270A1

公开(公告)日：2023-09-14

申请号：US18017765

申请日：2021-07-29

Applicant: TOKUYAMA CORPORATION

Inventor： Yoshiki SEIKE ,  Manami OSHIO ,  Seiji TONO

IPC: C09K13/00 ,  H01L21/306

CPC classification number: C09K13/00 ,  H01L21/30604

Abstract: A silicon etching liquid which contains a quaternary ammonium hydroxide represented by formula (1), a quaternary ammonium iodide represented by formula (2), and water. (1): R11R12R13R14N+·OH− (In formula (1), each of R11, R12, R13 and R14 independently represents an aryl group, a benzyl group or an alkyl group having from 1 to 16 carbon atoms; and the alkyl group, the aryl group or the benzyl group may have a hydroxyl group.) (2): R21R22R23R24N+·I− (In formula (2), R21, R22, R23 and R24 may be the same groups or different groups, and each represents an optionally substituted aryl group, benzyl group or alkyl group having from 1 to 10 carbon atoms.)

公开(公告)号：US20220033343A1

公开(公告)日：2022-02-03

申请号：US17280328

申请日：2019-09-26

Applicant: TOKUYAMA CORPORATION

Inventor： Shoji TACHIBANA ,  Seiji TONO ,  Sumito ISHIZU ,  Yoshiaki YAMASHITA

IPC: C07C211/63

Abstract: A treatment liquid composition for semiconductor production including: a quaternary ammonium hydroxide; and a first organic solvent dissolving the quaternary ammonium hydroxide, the first organic solvent being a water-soluble organic solvent having a plurality of hydroxy groups, wherein a water content in the composition is no more than 1.0 mass % on the basis of the total mass of the composition; contents of Na, Mg, Al, K, Ca, Ti, Cr, Mn, Fe, Ni, Cu, and Zn in the composition are each no more than 100 mass ppb on the basis of the total mass of the composition; and a content of Cl in the composition is no more than 100 mass ppb on the basis of the total mass of the composition.

公开(公告)号：US20200248076A1

公开(公告)日：2020-08-06

申请号：US16781013

申请日：2020-02-04

Applicant: Tokuyama Corporation ,  SCREEN Holdings Co., Ltd.

Inventor： Yoshiki SEIKE ,  Seiji TONO ,  Kenji KOBAYASHI ,  Sei NEGORO

IPC: C09K13/00 ,  H01L21/3213 ,  H01L21/306

Abstract: A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R1O—(CmH2mO)n—R2  (1) wherein R1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.