公开(公告)号：US20170137944A1

公开(公告)日：2017-05-18

申请号：US15322635

申请日：2015-06-23

Applicant: TOKYO ELECTRON LIMITED

Inventor： Shinji KUBOTA ,  Yusuke ICHIKAWA

IPC: C23C16/511 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/455 ,  C23C16/52

CPC classification number: C23C16/511 ,  C23C16/455 ,  C23C16/52 ,  H01J37/32201 ,  H01J37/32311 ,  H01J37/3244 ,  H01J37/32715 ,  H01J37/32935 ,  H01J2237/332 ,  H01L21/3065 ,  H01L21/67069

Abstract: This plasma processing apparatus is provided with a processing container, a placing table, a gas supply mechanism, a plasma generating mechanism, and an adjustment unit. The placing table is provided in the processing container, and a subject to be processed is placed on the placing table. The gas supply mechanism supplies a processing gas to the inside of the processing container, said processing gas being to be used for the purpose of plasma reaction. The plasma generating mechanism includes a microwave oscillator, and brings the processing gas supplied to the inside of the processing container into the plasma state using microwaves oscillated by means of the microwave oscillator. In the cases of performing a plurality of steps for plasma-processing the subject, the adjustment unit adjusts, at timing of switching the steps, the frequencies of the microwaves to be oscillated by means of the microwave oscillator to target frequencies predetermined for respective steps.