公开(公告)号：US20170338102A1

公开(公告)日：2017-11-23

申请号：US15670349

申请日：2017-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke KIMURA ,  Tatsuhiko KOIDE ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67109

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

公开(公告)号：US20180040490A1

公开(公告)日：2018-02-08

申请号：US15724744

申请日：2017-10-04

Applicant: Toshiba Memory Corporation

Inventor： Shinsuke KIMURA ,  Yoshihiro Ogawa

IPC: H01L21/67 ,  B08B3/08 ,  B08B7/00

CPC classification number: H01L21/67051 ,  B08B3/08 ,  B08B7/0057 ,  H01L21/02057 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/6715

Abstract: A manufacturing method of a semiconductor device according to the present invention comprises cleaning a semiconductor substrate. A first chemical liquid for forming a water-repellent protection film and a second chemical liquid coating the first chemical liquid are supplied on a surface of the semiconductor substrate. Alternatively, the semiconductor substrate is immersed in the first chemical liquid coated with the second chemical liquid. The semiconductor substrate is then dried.