PHASED ARRAY TRANSMITTER
    1.
    发明申请

    公开(公告)号:US20250080149A1

    公开(公告)日:2025-03-06

    申请号:US18952977

    申请日:2024-11-19

    Abstract: A phased array transmitter includes a plurality of signal couplers arranged to receive a radio frequency (RF) input signal, and a plurality of RF transmitters coupled to the signal couplers. Each RF transmitter includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive a plurality of electrical signals to produce an RF output signal. An amplifier circuit of the chip is configured to amplify the RF input signal to generate a plurality of amplified signals at a plurality of output terminals, respectively. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the radiating element. The phase shifting circuit is arranged to phase shift the amplified signals, and accordingly generate the electrical signals fed to the radiating element. Respective phase shifting circuits and respective radiating elements of the RF transmitters are formed on a same substrate.

    RF RECEIVER AND METHOD FOR RECEIVING RF INPUT SIGNAL

    公开(公告)号:US20230013519A1

    公开(公告)日:2023-01-19

    申请号:US17811310

    申请日:2022-07-08

    Abstract: A radio frequency (RF) receiver includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive an RF input signal to produce a plurality of electrical signals. The chip includes an amplifier circuit. The amplifier circuit is configured to receive a plurality of phase shifted signals from a plurality of input terminals respectively, and amplify the phase shifted signals to generate an RF output signal. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the input terminals. The phase shifting circuit is arranged to phase shift the electrical signals and accordingly generate the phase shifted signals. The phase shifting circuit and the radiating element are formed on a same substrate.

    BIAS VOLTAGE GENERATING CIRCUIT, SIGNAL GENERATOR CIRCUIT AND POWER AMPLIFIER

    公开(公告)号:US20240291441A1

    公开(公告)日:2024-08-29

    申请号:US18421997

    申请日:2024-01-25

    CPC classification number: H03F1/342 H03F1/30 H03F3/21

    Abstract: A bias voltage generating circuit includes an amplifier circuit and a negative feedback circuit. The amplifier circuit is configured to generate a bias voltage according to a first voltage input and a second voltage input. The negative feedback circuit is coupled to the amplifier circuit, and configured to control the first voltage input. The negative feedback circuit includes a first voltage generator and a second voltage generator. The first voltage generator, coupled to the amplifier circuit, is biased by the bias voltage and configured to amplify a third voltage input to generate the first voltage input. The second voltage generator, coupled to the first voltage generator, is configured to generate the third voltage input. A ratio of the first voltage input to the third voltage input is locked according to a ratio of the second voltage input to the third voltage input.

    RF TRANSMITTER AND METHOD FOR EMITTING RF OUTPUT SIGNAL

    公开(公告)号:US20230015197A1

    公开(公告)日:2023-01-19

    申请号:US17811313

    申请日:2022-07-08

    Abstract: A radio frequency (RF) transmitter includes a radiating element, a chip and a phase shifting circuit. The radiating element is arranged to receive a plurality of electrical signals to produce an RF output signal. The chip includes an amplifier circuit. The amplifier circuit is configured to amplify an RF input signal to generate a plurality of amplified signals at a plurality of output terminals, respectively. The phase shifting circuit is located outside the chip, and coupled to the output terminals and the radiating element. The phase shifting circuit is arranged to phase shift the amplified signals, and accordingly generate the electrical signals fed to the radiating element. The phase shifting circuit and the radiating element are formed on a same substrate.

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