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公开(公告)号:US20240291441A1
公开(公告)日:2024-08-29
申请号:US18421997
申请日:2024-01-25
Applicant: TRON FUTURE TECH INC.
Inventor: YU-JIU WANG , HAO-CHUNG CHOU , YUE MING WU , TA-SHUN CHU
Abstract: A bias voltage generating circuit includes an amplifier circuit and a negative feedback circuit. The amplifier circuit is configured to generate a bias voltage according to a first voltage input and a second voltage input. The negative feedback circuit is coupled to the amplifier circuit, and configured to control the first voltage input. The negative feedback circuit includes a first voltage generator and a second voltage generator. The first voltage generator, coupled to the amplifier circuit, is biased by the bias voltage and configured to amplify a third voltage input to generate the first voltage input. The second voltage generator, coupled to the first voltage generator, is configured to generate the third voltage input. A ratio of the first voltage input to the third voltage input is locked according to a ratio of the second voltage input to the third voltage input.
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公开(公告)号:US20240283417A1
公开(公告)日:2024-08-22
申请号:US18318321
申请日:2023-05-16
Applicant: TRON FUTURE TECH INC.
Inventor: YU-JIU WANG , YUE MING WU , HAO-CHUNG CHOU , TA-SHUN CHU
CPC classification number: H03F3/245 , H03G3/3042 , H03F2200/105 , H03F2200/451 , H03G2201/10 , H03G2201/307
Abstract: The present application discloses a radio frequency (RF) device. The radio frequency device includes a power amplifier, a power detector, and a digital signal processor (DSP). The power amplifier outputs a RF signal. The power detector receives the RF signal, and performs a plurality of calibration operations to generate a plurality of calibration voltages corresponding to a plurality of bias voltage, wherein the calibration operations are performed at the bias voltages respectively, and the calibration voltages are temperature-correlated due to that electrical characteristics of the power detector are temperature-correlated. The DSP controls the power detector to operate at the bias voltages, obtains an index voltage for indicating power of the RF signal by performing calculations upon the calibration voltages to reduce temperature dependency of the index voltage, and adjusts a gain of the power amplifier according to the index voltage.
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公开(公告)号:US20240201245A1
公开(公告)日:2024-06-20
申请号:US18065867
申请日:2022-12-14
Applicant: TRON FUTURE TECH INC.
Inventor: YU-JIU WANG , HAO-CHUNG CHOU , YUE MING WU , TA-SHUN CHU
CPC classification number: G01R31/2822 , G01R1/06772
Abstract: A method for manufacturing a first radio-frequency (RF) device, including: receiving a substrate having the first RF device, wherein the first RF device has a signal port for receiving or transmitting RF signals with an input impedance greater than ten times an input impedance of a testing tool; causing a probe assembly to connect to the signal port and the testing tool; and causing the probe assembly to connect to a first terminal of a resistive element having a resistance equal to the input impedance.
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