公开(公告)号：US20240387227A1

公开(公告)日：2024-11-21

申请号：US18787978

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Chang ,  Chien-Han Chen ,  Chien-Chih Chiu ,  Chi-Che Tseng

IPC: H01L21/683 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/687 ,  H01L21/8238

Abstract: Semiconductor devices, methods of manufacturing the semiconductor device and tools are disclosed herein. Some methods include providing an electrostatic chuck and placing an edge ring adjacent to the electrostatic chuck. The electrostatic chuck includes a first electrode to generate a sheath at a first distance over the electrostatic chuck. The edge ring includes a coil and a second electrode to generate an electric field control to maintain a portion of the sheath over the edge ring in a coplanar orientation with the portion of the sheath over the electrostatic chuck.

公开(公告)号：US20170372974A1

公开(公告)日：2017-12-28

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L21/66 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/3086 ,  H01L21/823431 ,  H01L22/12 ,  H01L22/20 ,  H01L22/30 ,  H01L29/6653 ,  H01L29/6656

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US20220367226A1

公开(公告)日：2022-11-17

申请号：US17520301

申请日：2021-11-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Yu Chang ,  Chien-Han Chen ,  Chien-Chih Chiu ,  Chi-Che Tseng

IPC: H01L21/683 ,  H01L21/687 ,  H01L21/67

Abstract: Semiconductor devices, methods of manufacturing the semiconductor device and tools are disclosed herein. Some methods include providing an electrostatic chuck and placing an edge ring adjacent to the electrostatic chuck. The electrostatic chuck includes a first electrode to generate a sheath at a first distance over the electrostatic chuck. The edge ring includes a coil and a second electrode to generate an electric field control to maintain a portion of the sheath over the edge ring in a coplanar orientation with the portion of the sheath over the electrostatic chuck.

公开(公告)号：US10818779B2

公开(公告)日：2020-10-27

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/8234 ,  H01L21/66 ,  H01L21/308 ,  G03F1/38

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US20190341474A1

公开(公告)日：2019-11-07

申请号：US16517246

申请日：2019-07-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  H01L21/308 ,  G03F1/38 ,  H01L21/66 ,  H01L21/8234

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.

公开(公告)号：US10361286B2

公开(公告)日：2019-07-23

申请号：US15191916

申请日：2016-06-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Che Tseng ,  Chen-Yuan Wang ,  Wilson Hsieh ,  Yi-Hung Lin ,  Chung-Li Huang

IPC: H01L29/66 ,  G03F1/38 ,  H01L21/8234 ,  H01L21/66

Abstract: An IC manufacturing method includes forming first mandrels and second mandrels over a substrate; and forming first spacers on sidewalls of the first mandrels and second spacers on sidewalls of the second mandrels. Each of the first and second spacers has a loop structure with two curvy portions connected by two lines. The method further includes removing the first and second mandrels; and removing the curvy portions from each of the first spacers without removing the curvy portions from the second spacers. The second spacers are used for monitoring variations of the IC fabrication processes.