公开(公告)号：US11075150B2

公开(公告)日：2021-07-27

申请号：US16056532

申请日：2018-08-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Li-Hsien Huang ,  An-Jhih Su ,  Der-Chyang Yeh ,  Hua-Wei Tseng ,  Chiang Lin ,  Ming-Shih Yeh

IPC: H01L23/495 ,  H01L23/498 ,  H01L23/31 ,  H01L21/56 ,  H01L25/10 ,  H01L21/48

Abstract: A redistribution structure includes a first dielectric layer and a first redistribution circuit layer. The first dielectric layer includes a first via opening. The first redistribution circuit layer is disposed on the first dielectric layer and includes a via portion filling the first via opening and a circuit portion connecting the via portion and extending over the first dielectric layer. A maximum vertical distance between an upper surface of the via portion and an upper surface of the circuit portion is substantially equal to or smaller than 0.5 μm.

公开(公告)号：US20210366845A1

公开(公告)日：2021-11-25

申请号：US17396907

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US11682637B2

公开(公告)日：2023-06-20

申请号：US17396907

申请日：2021-08-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/482 ,  H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/585 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US11984410B2

公开(公告)日：2024-05-14

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/482 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/522 ,  H01L23/528 ,  H01L23/58

CPC classification number: H01L23/585 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5226 ,  H01L23/5283 ,  H01L24/17 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.

公开(公告)号：US20230275040A1

公开(公告)日：2023-08-31

申请号：US18312705

申请日：2023-05-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wan-Yu Lee ,  Chiang Lin ,  Yueh-Ting Lin ,  Hua-Wei Tseng ,  Li-Hsien Huang ,  Yu-Hsiang Hu

IPC: H01L23/58 ,  H01L23/48 ,  H01L23/00 ,  H01L23/31 ,  H01L23/522 ,  H01L23/528 ,  H01L21/56

CPC classification number: H01L23/585 ,  H01L23/481 ,  H01L24/32 ,  H01L24/73 ,  H01L23/3128 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/563 ,  H01L24/17 ,  H01L2224/02379 ,  H01L2224/0401 ,  H01L2224/73253 ,  H01L2924/1436 ,  H01L2224/0231 ,  H01L2224/02373 ,  H01L2224/02381

Abstract: A method includes forming a reconstructed wafer including encapsulating a device die in an encapsulant, forming a dielectric layer over the device die and the encapsulant, forming a plurality of redistribution lines extending into the dielectric layer to electrically couple to the device die, and forming a metal ring in a common process for forming the plurality of redistribution lines. The metal ring encircles the plurality of redistribution lines, and the metal ring extends into scribe lines of the reconstructed wafer. A die-saw process is performed along scribe lines of the reconstructed wafer to separate a package from the reconstructed wafer. The package includes the device die and at least a portion of the metal ring.