公开(公告)号：US20190385855A1

公开(公告)日：2019-12-19

申请号：US16008321

申请日：2018-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jui-Fen CHIEN ,  Chih-Hsiang FAN ,  Hsiao-Kuan WEI ,  Pohan KUNG ,  Hsien-Ming LEE

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/321 ,  H01L29/66

Abstract: Methods of fabricating semiconductor devices are provided. The method includes forming a gate dielectric layer over a substrate. The method also includes depositing a first p-type work function tuning layer over the gate dielectric layer using a first atomic layer deposition (ALD) process with an inorganic precursor. The method further includes forming a second p-type work function tuning layer on the first p-type work function tuning layer using a second atomic layer deposition (ALD) process with an organic precursor. In addition, the method includes forming an n-type work function metal layer over the second p-type work function tuning layer.

公开(公告)号：US20190164751A1

公开(公告)日：2019-05-30

申请号：US15880389

申请日：2018-01-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chien CHI ,  Hsiao-Kuan WEI ,  Hung-Wen SU ,  Pei-Hsuan LEE ,  Hsin-Yun HSU ,  Jui-Fen CHIEN

IPC: H01L21/02 ,  H01L21/28 ,  H01L27/092 ,  H01L21/20 ,  H01L21/324 ,  H01L29/423 ,  H01L29/49 ,  H01L21/762 ,  H01L29/66

Abstract: Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.