公开(公告)号：US20200373298A1

公开(公告)日：2020-11-26

申请号：US16947758

申请日：2020-08-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi HUANG ,  Ying-Liang CHUANG ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L27/088 ,  H01L21/3213 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L21/311

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

公开(公告)号：US20190148212A1

公开(公告)日：2019-05-16

申请号：US15812112

申请日：2017-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wang-Hua LIN ,  Chun-Liang TAI ,  Chun-Hsiang FAN ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L21/687 ,  H01L21/67 ,  B08B3/10 ,  B08B3/08

Abstract: A method for cleaning a semiconductor wafer is provided. The method includes placing a semiconductor wafer over a supporter arranged around a central axis of a spin base. The method further includes securing the semiconductor wafer using a clamping member positioned on the supporter. The movement of the semiconductor wafer during the placement of the semiconductor wafer over the supporter is guided by a guiding member located over the clamping member. The method also includes spinning the semiconductor wafer by rotating the spin base about the central axis. In addition, the method includes dispensing a processing liquid over the semiconductor wafer.

公开(公告)号：US20250109870A1

公开(公告)日：2025-04-03

申请号：US18979108

申请日：2024-12-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Wei WU ,  Hao YANG ,  Hsiao-Chieh CHOU ,  Chun-Hung CHAO ,  Jao Sheng HUANG ,  Neng-Jye YANG ,  Kuo-Bin HUANG

IPC: F24F9/00 ,  H01L21/67 ,  H01L21/687

Abstract: The present disclosure is at least directed to utilizing air curtain devices to form air curtains to separate and isolate areas in which respective workpieces are stored from a transfer compartment within a workpiece processing apparatus. The transfer compartment of the workpiece processing apparatus includes a robot configured to transfer or transport ones of the workpieces to and from these respective storage areas through the transfer compartment and to and from a tool compartment. A tool is present in the tool compartment for processing and refining the respective workpieces. Clean dry air (CDA) may be circulated through the respective storage areas. The air curtains formed by the air curtain devices and the circulation of CDA through the respective storage areas reduces the likelihood of the generation of defects, damages, and degradation of the workpieces when present within the workpiece processing apparatus.

公开(公告)号：US20190035786A1

公开(公告)日：2019-01-31

申请号：US15799555

申请日：2017-10-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi HUANG ,  Ying-Liang CHUANG ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/3213 ,  H01L29/49 ,  H01L21/311 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

公开(公告)号：US20230349574A1

公开(公告)日：2023-11-02

申请号：US17733657

申请日：2022-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Wei WU ,  Hao YANG ,  Hsiao-Chieh CHOU ,  Chun-Hung CHAO ,  Jao Sheng HUANG ,  Neng-Jye YANG ,  Kuo-Bin HUANG

IPC: F24F9/00 ,  H01L21/687 ,  H01L21/67

CPC classification number: F24F9/00 ,  H01L21/68707 ,  H01L21/67196

Abstract: The present disclosure is at least directed to utilizing air curtain devices to form air curtains to separate and isolate areas in which respective workpieces are stored from a transfer compartment within a workpiece processing apparatus. The transfer compartment of the workpiece processing apparatus includes a robot configured to transfer or transport ones of the workpieces to and from these respective storage areas through the transfer compartment and to and from a tool compartment. A tool is present in the tool compartment for processing and refining the respective workpieces. Clean dry air (CDA) may be circulated through the respective storage areas. The air curtains formed by the air curtain devices and the circulation of CDA through the respective storage areas reduces the likelihood of the generation of defects, damages, and degradation of the workpieces when present within the workpiece processing apparatus.

公开(公告)号：US20210398975A1

公开(公告)日：2021-12-23

申请号：US17446900

申请日：2021-09-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi HUANG ,  Ying-Liang CHUANG ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L27/088 ,  H01L21/8234 ,  H01L21/3213 ,  H01L29/66 ,  H01L29/49 ,  H01L21/311 ,  H01L29/51 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

公开(公告)号：US20200279766A1

公开(公告)日：2020-09-03

申请号：US16876287

申请日：2020-05-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wang-Hua LIN ,  Chun-Liang TAI ,  Chun-Hsiang FAN ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L21/687 ,  H01L21/67 ,  B08B3/08 ,  B08B3/10

Abstract: A method for cleaning a semiconductor wafer is provided. The method includes placing a semiconductor wafer over a supporter arranged around a central axis of a spin base. The method further includes securing the semiconductor wafer using a clamping member positioned on the supporter. The movement of the semiconductor wafer during the placement of the semiconductor wafer over the supporter is guided by a guiding member located over the clamping member. The method also includes spinning the semiconductor wafer by rotating the spin base about the central axis. In addition, the method includes dispensing a processing liquid over the semiconductor wafer.

公开(公告)号：US20190326282A1

公开(公告)日：2019-10-24

申请号：US16404101

申请日：2019-05-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi HUANG ,  Ying-Liang CHUANG ,  Ming-Hsi YEH ,  Kuo-Bin HUANG

IPC: H01L27/088 ,  H01L29/49 ,  H01L29/423 ,  H01L29/06 ,  H01L29/51 ,  H01L21/311 ,  H01L21/8238 ,  H01L21/3213 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/66

Abstract: Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.