公开(公告)号：US20200373154A1

公开(公告)日：2020-11-26

申请号：US16983187

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dong-Sheng Li ,  Chia-Hui Lin ,  Kai Hung Cheng ,  Yao-Hsu Sun ,  Wen-Cheng Wu ,  Bo-Cyuan Lu ,  Sung-En Lin ,  Tai-Chun Huang

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/033 ,  H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8238

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.

公开(公告)号：US11195717B2

公开(公告)日：2021-12-07

申请号：US16983187

申请日：2020-08-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Dong-Sheng Li ,  Chia-Hui Lin ,  Kai Hung Cheng ,  Yao-Hsu Sun ,  Wen-Cheng Wu ,  Bo-Cyuan Lu ,  Sung-En Lin ,  Tai-Chun Huang

IPC: H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/28 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/8238 ,  G03F7/09 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26

Abstract: A four-layer photoresist and method of forming the same are disclosed. In an embodiment, a method includes forming a semiconductor fin; depositing a target layer on the semiconductor fin; depositing a BARC layer on the target layer; depositing a first mask layer over the BARC layer, the first mask layer being deposited using a plasma process with an RF power of less than 50 W; depositing a second mask layer over the first mask layer using a plasma process with an RF power of less than 500 W; depositing a photoresist layer over the second mask layer; patterning the photoresist layer, the second mask layer, the first mask layer, and the BARC layer to form a first mask; and selectively removing the target layer from a first portion of the semiconductor fin using the first mask, the target layer remaining on a second portion of the semiconductor fin.