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公开(公告)号：US20230389438A1
公开(公告)日：2023-11-30
申请号：US18447383
申请日：2023-08-10
发明人： Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
CPC分类号： H10N50/01 , H01F10/3254 , H10B61/00 , G11C11/161 , H01F41/34 , H10N50/80
摘要： A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
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公开(公告)号：US11864467B2
公开(公告)日：2024-01-02
申请号：US17461132
申请日：2021-08-30
发明人： Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
CPC分类号： H10N50/01 , G11C11/161 , H01F10/3254 , H01F41/34 , H10B61/00 , H10N50/80
摘要： A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
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公开(公告)号：US20210391534A1
公开(公告)日：2021-12-16
申请号：US17461132
申请日：2021-08-30
发明人： Jung-Tang Wu , Wu Meng Yu , Szu-Hua Wu , Chin-Szu Lee , Han-Ting Tsai , Yu-Jen Chien
摘要： A top electrode of a magnetoresistive random access memory (MRAM) device over a magnetic tunnel junction (MTJ) is formed using a film of titanium nitride oriented in a (111) crystal structure rather than a top electrode which uses tantalum, tantalum nitride, and/or a multilayer including tantalum and tantalum nitride.
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