公开(公告)号：US20170250098A1

公开(公告)日：2017-08-31

申请号：US15597100

申请日：2017-05-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yii-Cheng Lin ,  Chih-Ming Sun ,  Pinyen Lin

IPC: H01L21/67 ,  B08B9/08 ,  H01L21/306

CPC classification number: H01L21/67161 ,  B08B9/08 ,  H01L21/30604 ,  H01L21/67063 ,  H01L21/6719 ,  H01L21/67207

Abstract: A semiconductor processing device includes a first etching chamber, a second etching chamber, and an etching module. The etching module is adapted to interchangeably contain the first etching chamber or the second etching chamber for wafer etching. A semiconductor process using the semiconductor processing device is also provided.

公开(公告)号：US09666461B1

公开(公告)日：2017-05-30

申请号：US15016275

申请日：2016-02-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yii-Cheng Lin ,  Chih-Ming Sun ,  Pinyen Lin

IPC: H01L21/67 ,  H01L21/306 ,  B08B9/08

CPC classification number: H01L21/67161 ,  B08B9/08 ,  H01L21/30604 ,  H01L21/67063 ,  H01L21/6719 ,  H01L21/67207

Abstract: A semiconductor processing device includes a first etching chamber, a second etching chamber, and an etching module. The etching module is adapted to interchangeably contain the first etching chamber or the second etching chamber for wafer etching. A semiconductor process using the semiconductor processing device is also provided.

公开(公告)号：US09272315B2

公开(公告)日：2016-03-01

申请号：US14051532

申请日：2013-10-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： You-Hua Chou ,  Kuo-Sheng Chuang ,  Yii-Cheng Lin

IPC: B08B17/00 ,  B01D46/44 ,  F24F3/16 ,  H01L21/67

CPC classification number: B08B17/00 ,  B01D46/442 ,  B01D46/446 ,  B01D2258/0216 ,  B01D2279/51 ,  F24F3/1607 ,  H01L21/67017

Abstract: Embodiments of mechanisms for controlling a gas flow in an interface module are provided. A method for controlling a gas flow in an enclosure includes providing the enclosure which is capable of containing a substrate. The method also includes providing a gas into the enclosure. The method further includes cleaning the gas. In addition, the method includes actuating the gas to generate the gas flow, and the gas flow passes through the substrate when the substrate is located in the enclosure.

Abstract translation: 提供了用于控制接口模块中的气流的机构的实施例。 用于控制外壳中的气流的方法包括提供能够容纳基底的外壳。 该方法还包括将气体提供到外壳中。 该方法还包括清洁气体。 此外，该方法包括致动气体以产生气流，并且当衬底位于外壳中时气体流过衬底。