公开(公告)号：US07402513B2

公开(公告)日：2008-07-22

申请号：US11034616

申请日：2005-01-12

申请人： Takanori Sonoda ,  Kazumasa Mitsumune ,  Kenichiroh Abe ,  Yushi Inoue ,  Tsukasa Doi

发明人： Takanori Sonoda ,  Kazumasa Mitsumune ,  Kenichiroh Abe ,  Yushi Inoue ,  Tsukasa Doi

IPC分类号： H01L21/461 ,  H01L21/4763 ,  H01L21/469

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/3143 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837

摘要： It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film.A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less.According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.

摘要翻译： 本发明的目的是提供一种形成层间绝缘膜的方法，该层间绝缘膜抑制层间绝缘膜中空隙的发生。 一种形成本发明的层间绝缘膜的方法，包括以下步骤：（1）在具有该步骤部分的半导体衬底上的包括台阶部分的整个表面上形成氮化硅膜的蚀刻阻挡膜，该半导体衬底具有一个方面 比值> = 3; （2）在氮化硅膜上形成杂质掺杂硅酸盐膜的层间绝缘膜; 和（3）通过热处理进行层间绝缘膜的回流，其中控制氮化硅膜的形成，使得氮化硅膜的NH键密度为1.0×10 22个/ cm 3以下。 根据本发明的层间绝缘膜的形成方法，即使形成在半导体基板上的台阶部的纵横比为3以上，也能够抑制层间绝缘膜的空隙的发生。 此外，可以减少通过回流施加到半导体器件的损坏。

公开(公告)号：US20050159015A1

公开(公告)日：2005-07-21

申请号：US11034616

申请日：2005-01-12

申请人： Takanori Sonoda ,  Kazumasa Mitsumune ,  Kenichiroh Abe ,  Yushi Inoue ,  Tsukasa Doi

发明人： Takanori Sonoda ,  Kazumasa Mitsumune ,  Kenichiroh Abe ,  Yushi Inoue ,  Tsukasa Doi

IPC分类号： C23C16/34 ,  H01L21/28 ,  H01L21/31 ,  H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/522 ,  H01L21/4763 ,  H01L21/469

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/3143 ,  H01L21/31625 ,  H01L21/3185 ,  H01L21/76825 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837

摘要： It is an object of the present invention to provide a method for forming an interlayer insulation film suppressing the occurrence of voids in the interlayer insulation film. A method for forming an interlayer insulation film of the present invention, comprising the steps of: (1) forming an etching stopper film of a silicon nitride film on an entire surface including a step part on a semiconductor substrate having the step part with an aspect ratio of ≧3; (2) forming an interlayer insulation film of an impurity-doped silicate film on the silicon nitride film; and (3) performing reflow of the interlayer insulation film by a heat treatment, wherein the formation of the silicon nitride film is controlled such that the N—H bond density of the silicon nitride film is 1.0×1022 pieces/cm3 or less. According to the method for forming the interlayer insulation film of the present invention, the occurrence of the voids can be suppressed in the interlayer insulation film even if the aspect ratio of the step part formed on the semiconductor substrate is 3 or more. Also, the damage applied to the semiconductor device by reflow can be reduced.

摘要翻译： 本发明的目的是提供一种形成层间绝缘膜的方法，该层间绝缘膜抑制层间绝缘膜中空隙的发生。 一种形成本发明的层间绝缘膜的方法，包括以下步骤：（1）在具有该步骤部分的半导体衬底上的包括台阶部分的整个表面上形成氮化硅膜的蚀刻阻挡膜，该半导体衬底具有一个方面 比值> = 3; （2）在氮化硅膜上形成杂质掺杂硅酸盐膜的层间绝缘膜; 和（3）通过热处理进行层间绝缘膜的回流，其中控制氮化硅膜的形成，使得氮化硅膜的NH键密度为1.0×10 22个/ cm 3以下。 根据本发明的层间绝缘膜的形成方法，即使形成在半导体基板上的台阶部的纵横比为3以上，也能够抑制层间绝缘膜的空隙的发生。 此外，可以减少通过回流施加到半导体器件的损坏。

公开(公告)号：US20050118833A1

公开(公告)日：2005-06-02

申请号：US10998782

申请日：2004-11-30

申请人： Kazumasa Mitsumune ,  Tsukasa Doi ,  Yushi Inoue ,  Kenichirou Abe ,  Takanori Sonoda

发明人： Kazumasa Mitsumune ,  Tsukasa Doi ,  Yushi Inoue ,  Kenichirou Abe ,  Takanori Sonoda

IPC分类号： H01L23/522 ,  H01L21/31 ,  H01L21/314 ,  H01L21/318 ,  H01L21/768 ,  H01L21/469

CPC分类号： H01L21/02129 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3144 ,  H01L21/3145 ,  H01L21/76826 ,  H01L21/76828 ,  H01L21/76829 ,  H01L21/76837

摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device suppressing the occurrence of voids in an insulating film. A method for manufacturing a semiconductor device according to the present invention comprises the steps of: (1) forming an insulating film 11 composed of a thin silicon nitride film on a semiconductor substrate 1 having at least a necessary element and a recessed part 6 so as to cover the recessed part 6; (2) modifying the surface of the insulating film 11; and (3) forming a BPSG film 15 as an interlayer insulation film on the insulating film. The occurrence of voids in the interlayer insulation film 15 is suppressed by the process for modifying the surface.

摘要翻译： 本发明的目的是提供一种制造半导体器件的方法，该半导体器件抑制绝缘膜中空隙的发生。 根据本发明的制造半导体器件的方法包括以下步骤：（1）在具有至少必需元件的半导体衬底1上形成由氮化硅薄膜构成的绝缘膜11，以及凹入部分6，以便 覆盖凹部6; （2）改性绝缘膜11的表面; 和（3）在绝缘膜上形成作为层间绝缘膜的BPSG膜15。 通过改变表面的方法来抑制层间绝缘膜15中的空隙的发生。

公开(公告)号：US08865494B2

公开(公告)日：2014-10-21

申请号：US13579422

申请日：2011-02-18

申请人： Yoshimi Tanimoto ,  Takanori Sonoda ,  Hideaki Ikeda

发明人： Yoshimi Tanimoto ,  Takanori Sonoda ,  Hideaki Ikeda

IPC分类号： H01L21/00 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L2933/0016

摘要： A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.

摘要翻译： 制造了具有导电膜的高透射率，低接触电阻和导电膜的低薄层电阻的化合物半导体发光元件。 本发明的化合物半导体发光元件的制造方法包括以下工序：在基板上形成由含有发光层的III族氮化物半导体形成的半导体层; 在所述半导体层的与所述基板接触的一侧相反的一侧上形成导电膜; 在含氧的气氛中对导电膜进行第一次退火; 在不含氧的气氛中对导电膜进行第二次退火; 以及在进行第一退火的步骤和进行第二次退火的步骤之间将导电膜暴露于大气中。

公开(公告)号：US20120313504A1

公开(公告)日：2012-12-13

申请号：US13419616

申请日：2012-03-14

申请人： Hiroshi SASAKI ,  Takanori Sonoda

发明人： Hiroshi SASAKI ,  Takanori Sonoda

IPC分类号： H01J1/02 ,  C23C14/35

CPC分类号： C23C14/35 ,  C23C14/165 ,  H01L33/42 ,  H01L2933/0016

摘要： A film-forming device includes: a shield part placed so as to surround the sides of the target; a rod-shaped magnetic field generation unit for generating a magnetic field, the magnetic field generation unit being placed toward the back surface of the target; and a drive unit for reciprocatingly driving the magnetic field generation unit in a linear manner along a drive direction, which is a direction perpendicular to the length direction of the magnetic field generation unit, in a horizontal plane, which is a plane perpendicular to the front/back direction of the target. When the magnetic field generation unit is located at the end of the range within which it is driven by the drive unit, the distance in the drive direction between the magnetic field generation unit and the projection when the shield part is projected perpendicularly to the horizontal plane is 10 mm or more.

摘要翻译： 一种成膜装置，包括：围绕靶的侧面放置的屏蔽部分; 用于产生磁场的棒状磁场产生单元，朝向目标的后表面放置磁场产生单元; 以及驱动单元，用于沿着作为与磁场产生单元的长度方向垂直的方向的驱动方向以垂直于前方的平面的水平面线性地驱动磁场产生单元 /反方向的目标。 当磁场产生单元位于由驱动单元驱动的范围的末端时，当屏蔽部分垂直于水平面投影时，磁场产生单元和突起之间的驱动方向上的距离 为10mm以上。

公开(公告)号：US08461618B2

公开(公告)日：2013-06-11

申请号：US13185219

申请日：2011-07-18

申请人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

发明人： Akinori Mizogami ,  Takanori Sonoda ,  Masahiko Sakata ,  Yoshimi Tanimoto ,  Motoi Nagamori ,  Daigaku Kimura

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/32 ,  H01L33/44 ,  H01L2933/0016

摘要： A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

摘要翻译： 半导体发光器件包括衬底，位于衬底上方的n型半导体层，位于n型半导体层上的半导体发光层，位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜，位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。

公开(公告)号：US08513118B2

公开(公告)日：2013-08-20

申请号：US13236934

申请日：2011-09-20

申请人： Yoshimi Tanimoto ,  Takanori Sonoda

发明人： Yoshimi Tanimoto ,  Takanori Sonoda

IPC分类号： H01L21/44 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L2933/0016

摘要： It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device. A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.

摘要翻译： 本发明旨在提供一种制造方法，其能够提高透明性的降低，薄层电阻的降低，薄层电阻的平面分布的均匀化以及与包含在透明导电性氧化物膜中的透明导电氧化物膜的接触层相关的接触电阻的降低 化合物半导体发光装置。 一种化合物半导体发光器件的制造方法，其特征在于，在基板上沉积包含发光层的化合物半导体层叠体，在所述化合物半导体层叠体上沉积透明导电氧化膜，对所述透明导电性 氧化膜，然后在真空气氛中冷却。

公开(公告)号：US20120315718A1

公开(公告)日：2012-12-13

申请号：US13579422

申请日：2011-02-18

申请人： Yoshimi Tanimoto ,  Takanori Sonoda ,  Hideaki Ikeda

发明人： Yoshimi Tanimoto ,  Takanori Sonoda ,  Hideaki Ikeda

IPC分类号： H01L33/02

CPC分类号： H01L33/42 ,  H01L2933/0016

摘要： A compound semiconductor light-emitting element characterized by high transmittance of an electrically conductive film, low contact resistance and low sheet resistance of electrically conductive film is manufactured. The manufacturing method for a compound semiconductor light-emitting element of the present invention includes the steps of: forming a semiconductor layer formed of a group III nitride semiconductor, including a light-emitting layer on a substrate; forming an electrically conductive film on the side of the semiconductor layer opposite to the side contacting the substrate; conducting first annealing on the electrically conductive film in an atmosphere containing oxygen; conducting second annealing on the electrically conductive film in an atmosphere not containing oxygen; and exposing the electrically conductive film to atmospheric air between the step of conducting first annealing and the step of conducting second annealing.

摘要翻译： 制造了具有导电膜的高透射率，低接触电阻和导电膜的低薄层电阻的化合物半导体发光元件。 本发明的化合物半导体发光元件的制造方法包括以下工序：在基板上形成由含有发光层的III族氮化物半导体形成的半导体层; 在所述半导体层的与所述基板接触的一侧相反的一侧上形成导电膜; 在含氧的气氛中对导电膜进行第一次退火; 在不含氧的气氛中对导电膜进行第二次退火; 以及在进行第一退火的步骤和进行第二退火的步骤之间将导电膜暴露于大气中。

公开(公告)号：US20120080712A1

公开(公告)日：2012-04-05

申请号：US13236934

申请日：2011-09-20

申请人： Yoshimi TANIMOTO ,  Takanori Sonoda

发明人： Yoshimi TANIMOTO ,  Takanori Sonoda

IPC分类号： H01L33/42 ,  H01L33/26

CPC分类号： H01L33/42 ,  H01L33/0095 ,  H01L2933/0016

摘要： It is intended to provide a production method that enables at least one of improvement in transparency, reduction in sheet resistance, homogenization in planar distribution of sheet resistance, and reduction in contact resistance related to a contact layer regarding a transparent conductive oxide film included in a compound semiconductor light-emitting device.A method for producing a compound semiconductor light-emitting device includes depositing on a substrate a compound semiconductor stacked-layer body including a light-emitting layer, depositing a transparent conductive oxide film on the compound semiconductor stacked-layer body, and annealing the transparent conductive oxide film and thereafter cooling the same in a vacuum atmosphere.

摘要翻译： 本发明旨在提供一种制造方法，其能够提高透明性的降低，薄层电阻的降低，薄层电阻的平面分布的均匀化以及与包含在透明导电性氧化物膜中的透明导电氧化物膜的接触层相关的接触电阻的降低 化合物半导体发光装置。 一种化合物半导体发光器件的制造方法，其特征在于，在基板上沉积包含发光层的化合物半导体层叠体，在所述化合物半导体层叠体上沉积透明导电氧化膜，对所述透明导电性 氧化膜，然后在真空气氛中冷却。