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1.发明授权
公开(公告)号：US6156486A
公开(公告)日：2000-12-05
申请号：US432797
申请日：1999-11-03
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译： 在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。 使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。 阴性图案用碱性水溶液显影而没有溶胀。
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2.发明授权公开(公告)号：US06855483B2
公开(公告)日：2005-02-15
申请号：US10263704
申请日：2002-10-04
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a γ-hydroxy or δ-hydroxy carboxylic acid structure is partially or entirely converted to a γ-lactone or δ-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译： 在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。 使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。 阴性图案用碱性水溶液显影而没有溶胀。
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3.发明授权公开(公告)号：US06489082B1
公开(公告)日：2002-12-03
申请号：US09649592
申请日：2000-08-29
IPC分类号： G03F700
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a &ggr;-hydroxy or &dgr;-hydroxy carboxylic acid structure is partially or entirely converted to a &ggr;-lactone or &dgr;-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
摘要翻译： 在包括ArF准分子激光器的波长193nm的远紫外区域中形成阴图案，尽管其化学结构具有高干蚀刻，但不膨胀并具有优异的分辨率。 使用酸催化的反应，其中γ-羟基或δ-羟基羧酸结构部分或全部转化为γ-内酯或δ-内酯结构。 阴性图案用碱性水溶液显影而没有溶胀。
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公开(公告)号：US6017680A
公开(公告)日：2000-01-25
申请号：US86610
申请日：1998-05-29
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/146
摘要： A negative pattern is formed to be transparent in the far ultraviolet region including the wavelength 193 nm of an ArF excimer laser and, despite its chemical structure having high dry etching, does not swell and has excellent resolution. An acid-catalyzed reaction is utilized wherein a .gamma.-hydroxy or .delta.-hydroxy carboxylic acid structure is partially or entirely converted to a .gamma.-lactone or .delta.-lactone structure. The negative pattern is developed with an aqueous alkali solution without swelling.
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5.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06927002B2
公开(公告)日：2005-08-09
申请号：US10026973
申请日：2001-12-27
IPC分类号： G03F7/004 , G03F1/00 , G03F1/26 , G03F1/30 , G03F1/32 , G03F1/40 , G03F1/42 , G03F1/54 , G03F1/56 , G03F1/60 , G03F1/68 , G03F1/70 , G03F1/80 , G03F7/20 , H01L21/027 , G03F9/00
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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公开(公告)号：US07005216B2
公开(公告)日：2006-02-28
申请号：US10299692
申请日：2002-11-20
IPC分类号： G03F9/00
CPC分类号： G03F1/56
摘要： Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
摘要翻译： 提供KrF准分子激光光刻的光掩模，可以在较小数量的步骤中以高精度和低缺陷生产。 根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光（波长：约248nm）的抗蚀剂图案18的光掩模。 抗蚀剂图案18包括：具有高遮光性的碱性水溶性树脂，其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。
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7.发明授权Photomask, the manufacturing method, a patterning method, and a semiconductor device manufacturing method 有权光掩模，制造方法，图案化方法和半导体器件制造方法公开(公告)号：US06703171B2
公开(公告)日：2004-03-09
申请号：US10072880
申请日：2002-02-12
IPC分类号： G03F900
摘要： To develop a small quantity of various kinds of semiconductor devices in a short time and to realize a photomask suitable to be manufactured at a low cost. A shade pattern of a photomask is constituted by containing nanoparticles such as carbon in an organic film such as a photoresist film. A pattern is transferred to a photoresist on a semiconductor wafer by means of the reduction projection exposure using the photomask. At the time of the above exposure, it is possible to select exposure light within a range of wide wavelengths including i-line, KrF excimer laser beam, ArF excimer laser beam, or the like.
摘要翻译： 为了在短时间内开发少量的各种半导体器件，并且实现了适合以低成本制造的光掩模。 光掩模的阴影图案通过在诸如光致抗蚀剂膜的有机膜中含有诸如碳的纳米颗粒而构成。 通过使用光掩模的还原投影曝光将图案转印到半导体晶片上的光刻胶上。 在上述曝光时，可以选择宽波长范围内的曝光光，包括i线，KrF准分子激光束，ArF准分子激光束等。
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公开(公告)号：US07642145B2
公开(公告)日：2010-01-05
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： H01L21/8238
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
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公开(公告)号：US20060105273A1
公开(公告)日：2006-05-18
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
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公开(公告)号：US09496761B2
公开(公告)日：2016-11-15
申请号：US14002592
申请日：2012-12-21
申请人： Hidehiro Haga , Masato Aono , Takashi Hattori
发明人： Hidehiro Haga , Masato Aono , Takashi Hattori
摘要： A motor may include a stationary section and a rotating section. The stationary section may include a stator core having a plurality of teeth and a coil including a conducting wire wound around each tooth. The rotating section may include a plurality of magnets arranged radially inside the coil, a rotor core, and a magnet holder holding the magnets. Each magnet may have a circumferential end face at each of both end portions in the circumferential direction. The magnet holder may include a columnar portion axially extending between adjacent magnets, and a wall surface spreading in the circumferential direction from the columnar portion. The wall surface may come into contact with a surface arranged radially outside the circumferential end face of the magnet. The circumferential end face on at least one side of the magnet may face the columnar portion with a gap interposed therebetween in the circumferential direction.
摘要翻译： 马达可以包括固定部分和旋转部分。 固定部分可以包括具有多个齿的定子芯和包括围绕每个齿缠绕的导线的线圈。 旋转部分可以包括沿线圈径向设置的多个磁体，转子芯和保持磁体的磁体保持器。 每个磁体可以在圆周方向上的两个端部的每一个处具有圆周端面。 磁体保持器可以包括在相邻的磁体之间轴向延伸的柱状部分和从柱状部分在圆周方向上扩展的壁表面。 壁面可以与设置在磁体的周向端面的径向外侧的表面接触。 磁体的至少一侧的周向端面可以在圆周方向上与其间具有间隙的方式面向柱状部。
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