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公开(公告)号：US07005216B2
公开(公告)日：2006-02-28
申请号：US10299692
申请日：2002-11-20
IPC分类号： G03F9/00
CPC分类号： G03F1/56
摘要： Providing a photo mask for KrF excimer laser lithography, which can be produced with high accuracy and low defects in a smaller number of steps. A photo mask for KrF excimer laser lithography according to the present invention is one in which a resist pattern 18 efficiently absorbing a KrF excimer laser light (wavelength: about 248 nm) is formed directly on a quartz substrate 10. The resist pattern 18 comprises: an aqueous alkali-soluble resin having a high light shielding property, which incorporates a naphthol structure having at least one hydroxyl group bound to a naphthalene nucleus; or a radiation sensitive resist having, as a main component, an aqueous alkali-soluble resin containing a derivative of the above-mentioned aqueous alkali-soluble resin as a resin matrix.
摘要翻译： 提供KrF准分子激光光刻的光掩模，可以在较小数量的步骤中以高精度和低缺陷生产。 根据本发明的用于KrF准分子激光光刻的光掩模是其中直接在石英衬底10上形成有效吸收KrF准分子激光（波长：约248nm）的抗蚀剂图案18的光掩模。 抗蚀剂图案18包括：具有高遮光性的碱性水溶性树脂，其包含具有至少一个与萘核结合的羟基的萘酚结构; 或具有作为主要成分的含有上述碱溶性水溶性树脂的衍生物的碱溶性树脂作为树脂基质的辐射敏感性抗蚀剂。
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公开(公告)号：US06319649B1
公开(公告)日：2001-11-20
申请号：US09024873
申请日：1998-02-17
IPC分类号： G03F7021
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/111
摘要： A chemically amplified photosensitive resin composition containing a first compound forming an acid by irradiation of actinic ray and a second compound that changes the solubility to an aqueous alkali solution with acid-catalyzed reaction wherein an ion dissociative compound having the composition represented by the general formula (1) or (2), as well a method of forming a resist pattern using the composition are disclosed, the formulae being expressed by: where each of R2, R3 and R4 represents hydrogen, and an alkyl or aryl group of 1 to 7 carbon atoms, at least one of R1, R2, R3 and R4 represents hydrogen, Y1 represents chlorine, bromine, iodine, carbonate group of 1 to 7 carbon atoms or sulfonate group of 1 to 7 carbon atoms, and
摘要翻译： 一种化学放大型光敏树脂组合物，其含有通过光化射线照射形成酸的第一化合物和通过酸催化反应改变其对碱性水溶液的溶解度的第二化合物，其中具有由通式表示的组成的离子解离化合物（ 1）或（2），以及使用该组合物形成抗蚀剂图案的方法，其公式表示为：其中R2，R3和R4各自表示氢，并且具有1至7个碳原子的烷基或芳基 R1，R2，R3和R4中的至少一个表示氢，Y1表示氯，溴，碘，1〜7个碳原子的碳酸酯基或1〜7个碳原子的磺酸酯基，
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公开(公告)号：US20060105273A1
公开(公告)日：2006-05-18
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： G03C5/00
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
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公开(公告)号：US5324550A
公开(公告)日：1994-06-28
申请号：US929196
申请日：1992-08-12
CPC分类号： G03F7/11 , G03F7/09 , G03F7/0045 , G03F7/022
摘要： In forming a resist pattern by forming a resist film containing an acid generator on a spin on glass film or a silicon resin film and subsequent exposure of light, an inhomogeneous distribution of an acid in the resist film caused by the spin on glass film or the silicon resin film is remedied by adding an acid generator beforehand into the spin on glass film or the silicon resin film or by using an organic polymer containing an acid generator. As a result, a profile defect in a cross section of the resist pattern caused by inhomogeneous acid distribution is prevented and the resist pattern has a rectangular cross-sectional shape.
摘要翻译： 在通过在玻璃膜或硅树脂膜上的自旋上形成含有酸发生剂的抗蚀剂膜并随后曝光的方式形成抗蚀剂图案时，由于在玻璃膜上旋转引起的抗蚀剂膜中的酸不均匀分布 通过预先将酸产生剂添加到玻璃膜或硅树脂膜上的旋涂中或通过使用含有酸发生剂的有机聚合物来补救硅树脂膜。 结果，防止由不均匀的酸分布引起的抗蚀剂图案的横截面中的轮廓缺陷，并且抗蚀剂图案具有矩形横截面形状。
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公开(公告)号：US07642145B2
公开(公告)日：2010-01-05
申请号：US10523247
申请日：2002-07-30
申请人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
发明人： Hiroshi Fukuda , Yoshiyuki Yokoyama , Takashi Hattori , Toshio Sakamizu , Tadashi Arai , Hiroshi Shiraishi
IPC分类号： H01L21/8238
CPC分类号： G03F7/0382 , G03F7/0045 , G03F7/0392 , G03F7/0755 , G03F7/0757 , H01L21/31144 , H01L21/32139 , H01L21/76808 , H01L27/10
摘要： There is a problem in that when the demand accuracy with respect to a semiconductor pattern dimension comes close to a resist molecule size with miniaturization, the device performance is deteriorated due to edge roughness of a resist pattern to exert a bad influence on the system performance. The present invention overcomes the problem by the procedure in which super-molecules which are small in dimension as compared with the conventional polymers are used as main components, the reaction number required for the change of molecule solubility is made constant and as large as possible, and an acid generator is made clathrate or combinatory n super molecules to make an acid catalyst concentration large. As a result, it is possible to form a pattern of molecular accuracy with high productivity even with respect to the pattern dimension less than 50 nm, thereby realizing the high performance system.
摘要翻译： 存在的问题在于，当半导体图案尺寸的需求精度接近于小型化的抗蚀剂分子尺寸时，由于抗蚀剂图案的边缘粗糙度而导致的器件性能劣化，从而对系统性能产生不良影响。 本发明通过使用与常规聚合物相比尺寸小的超分子作为主要成分的方法克服了该问题，使分子溶解度变化所需的反应数量保持恒定且尽可能大， 使酸发生剂成为包合物或组合的超分子，使酸催化剂浓度变大。 结果，即使相对于图案尺寸小于50nm，也可以以高生产率形成分子精度图案，从而实现高性能系统。
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6.发明授权
公开(公告)号：US5350485A
公开(公告)日：1994-09-27
申请号：US9012
申请日：1993-01-26
IPC分类号： G03F7/038 , G03F7/039 , G03F7/26 , G03F7/38 , H01L21/027 , H01L21/3213 , H01L21/00
CPC分类号： G03F7/26 , G03F7/38 , H01L21/0277 , H01L21/0278 , H01L21/32139
摘要： A lithographic method for forming a mask pattern is useful for etching wiring or insulator layers on a substrate. A catalyst generation layer and a latent image formation layer are formed on the target layer prior to application of actinic radiation to activate a catalyst in the catalyst generation layer in accordance with a predetermined pattern. The activated catalyst diffuses into the latent image formation layer to form a latent image, which then serves as a mask pattern for etching the catalyst generation layer, latent image formation layer and target layer. The catalyst generation layer may be formed prior to the latent image formation layer, or vice versa. In another embodiment, the catalyst generation layer is formed prior to the radiation step, but the latent image formation layer is formed after application of the actinic radiation.
摘要翻译： 用于形成掩模图案的光刻方法对于蚀刻衬底上的布线或绝缘体层是有用的。 在施加光化辐射之前，在靶层上形成催化剂生成层和潜像形成层，以根据预定图案活化催化剂生成层中的催化剂。 活化的催化剂扩散到潜像形成层中以形成潜像，然后用作蚀刻催化剂生成层，潜像形成层和目标层的掩模图案。 催化剂生成层可以在潜像形成层之前形成，反之亦然。 在另一个实施方案中，在辐射步骤之前形成催化剂生成层，但是在施加光化辐射之后形成潜像形成层。
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公开(公告)号：US20050008976A1
公开(公告)日：2005-01-13
申请号：US10869892
申请日：2004-06-18
IPC分类号： G03F7/032 , B08B3/00 , G03C5/00 , G03F7/004 , G03F7/32 , H01L21/027 , H01L21/32 , H01L21/3213
CPC分类号： H01L21/0273 , G03F7/0046 , G03F7/325 , H01L21/32 , H01L21/32139
摘要： To form a fine resist pattern without collapse, the invention patterns a resist by applying a resist composition to a substrate to form a resist film, exposing the resist film to radiation in a desired pattern, and developing the exposed resist film using supercritical carbon dioxide at 200 atm or lower. The resist composition mainly includes a polymer having a solubility parameter equal to or lower than that of supercritical carbon dioxide.
摘要翻译： 为了形成没有崩溃的精细抗蚀剂图案，本发明通过将抗蚀剂组合物施加到基底上以形成抗蚀剂膜来形成抗蚀剂，将抗蚀剂膜暴露于所需图案的辐射，并且使用超临界二氧化碳显影曝光的抗蚀剂膜 200 atm以下。 抗蚀剂组合物主要包括溶解度参数等于或低于超临界二氧化碳的聚合物。
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