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1.发明申请Nitrogen-containing organic compound, resist composition and patterning process 有权含氮有机化合物，抗蚀剂组合物和图案化工艺公开(公告)号：US20050106500A1
公开(公告)日：2005-05-19
申请号：US10984933
申请日：2004-11-10
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0382
摘要： Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译： 包含具有芳族羧酸酯结构的含氮有机化合物的化学扩增抗蚀剂组合物具有优异的分辨率并提供精确的图案轮廓，并且可用于使用电子束或深紫外光的微细加工。
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2.发明授权Nitrogen-containing organic compound, resist composition and patterning process 有权含氮有机化合物，抗蚀剂组合物和图案化工艺公开(公告)号：US07276324B2
公开(公告)日：2007-10-02
申请号：US10984933
申请日：2004-11-10
申请人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
发明人： Takeru Watanabe , Takeshi Kinsho , Koji Hasegawa , Katsuya Takemura , Kazumi Noda , Katsuhiro Kobayashi
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/0382
摘要： Chemically amplified resist compositions comprising nitrogen-containing organic compounds having an aromatic carboxylic acid ester structure have an excellent resolution and provide a precise pattern profile and are useful in microfabrication using electron beams or deep-UV light.
摘要翻译： 包含具有芳族羧酸酯结构的含氮有机化合物的化学扩增抗蚀剂组合物具有优异的分辨率并提供精确的图案轮廓，并且可用于使用电子束或深紫外光的微细加工。
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3.发明授权Fluorinated monomer, fluorinated polymer, resist composition and patterning process 有权氟化单体，含氟聚合物，抗蚀剂组合物和图案化工艺公开(公告)号：US07981589B2
公开(公告)日：2011-07-19
申请号：US12146375
申请日：2008-06-25
CPC分类号： C07C69/67 , C07C69/753 , C07C2601/08 , C07C2602/42 , C08F220/24 , C08F220/26 , C08F232/08 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： Fluorinated monomers of formula (1) are useful in producing polymers for the formulation of radiation-sensitive resist compositions. R1 is H or monovalent C1-C20 hydrocarbon group, R2 is H, F, methyl or trifluoromethyl, R3 and R4 are H or a monovalent C1-C8 hydrocarbon group, or R3 and R4 may form an aliphatic hydrocarbon ring, and A is a divalent C1-C6 hydrocarbon group
摘要翻译： 式（1）的氟化单体可用于制备用于制备辐射敏感抗蚀剂组合物的聚合物。 R1是H或一价C1-C20烃基，R2是H，F，甲基或三氟甲基，R3和R4是H或一价C1-C8烃基，或R3和R4可以形成脂族烃环，A是 二价C1-C6烃基
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4.发明授权Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US07919226B2
公开(公告)日：2011-04-05
申请号：US12222645
申请日：2008-08-13
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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5.发明授权Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US07531290B2
公开(公告)日：2009-05-12
申请号：US11588413
申请日：2006-10-27
IPC分类号： G03C1/73 , G03F7/039 , G03F7/20 , G03F7/30 , C07C303/32
CPC分类号： C07C381/12 , C07C309/07 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula: R1SO3—CH(Rf)—CF2SO3−M+ wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有下式：<？in-line-formula description =“In-line Formulas”end =“lead”？> R1SO3-CH（Rf）-CF2SO3-M + <？in-line-formula description =“In- 其中R1是烷基或芳基，Rf是H或三氟甲基，M +是Li，Na，K，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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6.发明申请Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US20080318160A1
公开(公告)日：2008-12-25
申请号：US12222645
申请日：2008-08-13
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula:CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有式：CF 3 -CH（OCOR）-CF 2 SO 3 -M +，其中R是C 1 -C 20烷基或C 6 -C 14芳基，M +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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7.发明申请Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US20070099113A1
公开(公告)日：2007-05-03
申请号：US11588414
申请日：2006-10-27
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , C07C309/08 , C07C381/12 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： Sulfonate salts have the formula: CF3—CH(OH)—CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Because of inclusion within the molecule of a hydroxyl group which is a polar group, the sulfonic acids are effective for restraining the length of acid diffusion through hydrogen bond or the like. The photoacid generators that generate these sulfonic acids perform well during the device fabrication process including coating, pre-baking, exposure, post-exposure baking, and developing steps. The photoacid generators are little affected by water left on the wafer during the ArF immersion lithography.
摘要翻译： 磺酸盐具有下式：CF 3 -CH（OH）-CF 2 SO 3 SO 2 - > + +其中M + +是Li，Na，K，铵或四甲基铵离子。 由于在分子内包含作为极性基团的羟基，所以磺酸对于抑制通过氢键等的酸扩散的长度是有效的。 产生这些磺酸的光酸产生剂在器件制造过程中表现良好，包括涂层，预烘烤，曝光，曝光后烘烤和显影步骤。 在ArF浸没光刻期间，光致酸发生器几乎不受水晶体上剩余的水分的影响。
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8.发明申请Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US20070099112A1
公开(公告)日：2007-05-03
申请号：US11588413
申请日：2006-10-27
IPC分类号： G03C1/00
CPC分类号： C07C381/12 , C07C309/07 , G03F7/0045 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula: R1SO3—CH(Rf)-CF2SO3−M+ wherein R1 is alkyl or aryl, Rf is H or trifluoromethyl, and M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有下式：R 1 SO 3 -CH（R f）-CF 2 SO 3 SO 2 其中R 1是烷基或芳基，R f是H或三氟甲基，M +是H， Na，K，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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9.发明申请Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权新型磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US20060228648A1
公开(公告)日：2006-10-12
申请号：US11397526
申请日：2006-04-05
IPC分类号： G03C1/00
CPC分类号： C07C309/12 , C07C381/12 , C07D307/64 , C07D307/68 , C07D333/46 , G03F7/0045 , Y10S430/106 , Y10S430/111 , Y10S430/122 , Y10S430/126
摘要： Sulfonate salts have the formula: CF3—CH(OCOR)—CF2SO3−M+ wherein R is C1-C20 alkyl or C6-C14 aryl, and M+ is a lithium, sodium, potassium, ammonium or tetramethylammonium ion. Onium salts, oximesulfonates and sulfonyloxyimides and other compounds derived from these sulfonate salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有下式：CF 3 -CH（OCOR）-CF 2 SO 3 SO 2 - 其中R是C 1 -C 20烷基或C 6 -C 14芳基 ，M + +是锂，钠，钾，铵或四甲基铵离子。 鎓盐，肟磺酸盐和磺酰氧基酰亚胺以及衍生自这些磺酸盐的其它化合物是化学放大抗蚀剂组合物中有效的光致酸产生剂。
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10.发明授权Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process 有权磺酸盐和衍生物，光酸产生剂，抗蚀剂组合物和图案化方法公开(公告)号：US08030515B2
公开(公告)日：2011-10-04
申请号：US13043683
申请日：2011-03-09
IPC分类号： C07C309/08
CPC分类号： C07C381/12 , C07C309/08 , C07C381/00 , C07D333/46 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： Sulfonate salts have the formula: HOCH2CH2CF2CF2SO3−M+ wherein M+ is a Li, Na, K, ammonium or tetramethylammonium ion. Onium salts, oxime sulfonates and sulfonyloxyimides derived from these salts are effective photoacid generators in chemically amplified resist compositions.
摘要翻译： 磺酸盐具有下式：HOCH2CH2CF2CF2SO3-M +，其中M +是Li，Na，K，铵或四甲基铵离子。 衍生自这些盐的鎓盐，肟磺酸盐和磺酰氧基酰亚胺是化学放大抗蚀剂组合物中有效的光酸产生剂。
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