公开(公告)号：US20240360069A1

公开(公告)日：2024-10-31

申请号：US18635874

申请日：2024-04-15

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Yutaro OTOMO ,  Jun Hatakeyama ,  Tomomi Watanabe ,  Tomohiro Kobayashi

IPC: C07C69/76 ,  C07C25/18 ,  C07C381/12 ,  C07D333/76 ,  C08F220/18 ,  C08F220/22 ,  G03F7/038 ,  G03F7/039

CPC classification number: C07C69/76 ,  C07C25/18 ,  C07C381/12 ,  C07D333/76 ,  C08F220/1806 ,  C08F220/1807 ,  C08F220/22 ,  G03F7/038 ,  G03F7/039

Abstract: The present invention is a monomer represented by the following general formula (a)-1M or (a)-2M. This provides: a resist material having higher sensitivity and higher resolution than conventional positive resist materials, small edge roughness and size variation, and excellent pattern profile after exposure; a monomer to be an ingredient for the resist material; a resist composition containing the resist material; and a patterning process.

公开(公告)号：US20240337927A1

公开(公告)日：2024-10-10

申请号：US18597253

申请日：2024-03-06

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima

IPC: G03F7/004 ,  C07C25/18 ,  C07C43/29 ,  C07C309/11 ,  C07C309/12 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C43/29 ,  C07C309/11 ,  C07C309/12 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/10 ,  C07C2602/42 ,  C07C2603/74

Abstract: The onium salt is capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The alkanesulfone type onium salt whose anion has a bulky substituent at α-position of a sulfo group and a bulky aromatic ring structure is capable of generating an acid having an adequate acid strength and controlled diffusion. A chemically amplified positive resist composition comprising the onium salt is provided.

公开(公告)号：US20240295812A1

公开(公告)日：2024-09-05

申请号：US18566338

申请日：2022-06-15

Applicant: TOKYO OHKA KOGYO CO., LTD.

Inventor： Junichi Miyakawa ,  Hiroki Kato ,  KhanhTin Nguyen ,  Takuya Ikeda ,  Seiji Todoroki ,  Tetsuya Matsushita

IPC: G03F7/004 ,  C07C25/18 ,  C07C211/63 ,  C07C303/22 ,  C07C309/12 ,  C07C381/12 ,  C07D333/76

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C211/63 ,  C07C303/22 ,  C07C309/12 ,  C07C381/12 ,  C07D333/76

Abstract: A resin component (A1) and a compound (B0) represented by General Formula (b0) in which X0 represents a bromine atom or an iodine atom, Rm represents a hydroxy group, nb1 represents an integer of 1 to 5, and nb2 represents an integer of 0 to 4, 1≤nb1+nb2≤5 is satisfied, Yb0 represents a divalent linking group or a single bond, Vb0 represents a single bond, an alkylene group, or a fluorinated alkylene group, R0 represents a hydrogen atom, a fluorinated alkyl group having 1 to 5 carbon atoms, or a fluorine atom, and Rb1 to Rb15 each independently represents a hydrogen atom or a substituent, and at least two of Rb1 to Rb5 represent a fluorine atom or at least one of Rb1 to Rb5 represents a perfluoroalkyl group

公开(公告)号：US12072627B2

公开(公告)日：2024-08-27

申请号：US18197244

申请日：2023-05-15

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Teppei Adachi ,  Shinya Yamashita ,  Masaki Ohashi ,  Tomohiro Kobayashi ,  Kenichi Oikawa ,  Takayuki Fujiwara

IPC: G03F7/004 ,  C07C381/12 ,  C07D307/93 ,  C07D327/04 ,  C07D493/18 ,  C08F220/18 ,  G03F7/038 ,  G03F7/039 ,  G03F7/11 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C07D307/93 ,  C07D327/04 ,  C07D493/18 ,  C08F220/1807 ,  C08F220/1808 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2006 ,  G03F7/2041

Abstract: A resist composition containing: (A) a resin containing a repeating unit having an acid-labile group; (B) a photo-acid generator shown by a general formula (B-1); and (C) a solvent, where W1 represents a cyclic divalent hydrocarbon group having 4 to 12 carbon atoms and containing a heteroatom; W2 represents a cyclic monovalent hydrocarbon group having 4 to 14 carbon atoms and not containing a heteroatom; Rf represents a divalent organic group shown by the following general formula; and M+ represents an onium cation. This provides a resist composition and a patterning process that uses the resist composition that show a particularly favorable mask dimension dependency (mask error factor: MEF), LWR, and critical dimension uniformity (CDU) particularly in photolithography where a high-energy beam such as an ArF excimer laser beam is used as a light source.

公开(公告)号：US20240280900A1

公开(公告)日：2024-08-22

申请号：US18404506

申请日：2024-01-04

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Satoshi Watanabe ,  Keiichi Masunaga ,  Masaaki Kotake ,  Yuta Matsuzawa

IPC: G03F7/004 ,  C07C25/18 ,  C07C309/43 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  C07D333/76 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C309/43 ,  C07C309/73 ,  C07C381/12 ,  C07D327/08 ,  C07D333/76 ,  G03F7/0392 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2601/18 ,  C07C2602/10 ,  C07C2602/42 ,  C07C2603/74

Abstract: This invention relates to an onium salt, a chemically amplified positive resist composition, and a resist pattern forming process. The invention provides an onium salt capable of generating an acid having an adequate acid strength and low diffusion, a chemically amplified positive resist composition comprising the onium salt, and a resist pattern forming process using the composition. The chemically amplified positive resist composition comprises an onium salt capable of generating an acid having an adequate acid strength and suppressed diffusion is provided.

公开(公告)号：US12060317B2

公开(公告)日：2024-08-13

申请号：US17331869

申请日：2021-05-27

Applicant: Shin-Etsu Chemical Co., Ltd.

Inventor： Masahiro Fukushima ,  Satoshi Watanabe ,  Ryosuke Taniguchi ,  Naoya Inoue

IPC: G03F7/004 ,  C07C303/32 ,  C07C309/06 ,  C07C309/19 ,  C07C309/24 ,  C07C381/12 ,  G03F1/22 ,  G03F7/037 ,  G03F7/038 ,  G03F7/20 ,  G03F7/26

CPC classification number: C07C381/12 ,  C07C303/32 ,  C07C309/06 ,  C07C309/19 ,  C07C309/24 ,  G03F1/22 ,  G03F7/0045 ,  G03F7/037 ,  G03F7/0382 ,  G03F7/2004 ,  G03F7/26

Abstract: An onium salt having a partial structure of formula (A) is provided wherein Ra1 and Ra2 are hydrogen or a C1-C10 hydrocarbyl group in which hydrogen may be substituted by halogen and —CH2— may be replaced by —O— or —C(═O)—, both Ra1 and Ra2 are not hydrogen at the same time, Ra1 and Ra2 may bond together to form an aliphatic ring. A chemically amplified negative resist composition comprising the onium salt as acid generator forms a pattern of good profile having a high sensitivity, improved dissolution contrast, reduced LWR and improved CDU.

公开(公告)号：US12013636B2

公开(公告)日：2024-06-18

申请号：US17517257

申请日：2021-11-02

Applicant: SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Masahiko Shimada ,  Koji Ichikawa

IPC: G03F7/004 ,  C07C25/02 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/11 ,  C07C309/12 ,  C07C309/17 ,  C07C309/19 ,  C07C309/24 ,  C07C381/12 ,  C07D307/93 ,  G03F7/038 ,  G03F7/039 ,  G03F7/30 ,  G03F7/38

CPC classification number: G03F7/0045 ,  C07C25/02 ,  C07C303/32 ,  C07C309/06 ,  C07C309/10 ,  C07C309/11 ,  C07C309/17 ,  C07C309/24 ,  C07C381/12 ,  C07D307/93 ,  G03F7/0382 ,  G03F7/0397 ,  G03F7/30 ,  G03F7/38 ,  C07C2603/74

Abstract: Disclosed are a salt represented by formula (I), an acid generator and a resist composition:




wherein Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group; R11 and R12 each represent a hydrogen atom, a fluorine atom or a perfluoroalkyl group; z represents an integer of 0 to 6; X0 represents *—CO—O—, *—O—CO—, etc.; L1 represents a single bond or a hydrocarbon group which may have a substituent; Ar represents an aromatic hydrocarbon group which may have a substituent; X1 represents an oxygen atom or a sulfur atom; R1 represents a halogen atom or a haloalkyl group; R2 represents a halogen atom, a hydroxy group, a haloalkyl group or an alkyl group; m1 represents an integer of 1 to 6; m2 represents an integer of 0 to 4; and Z+ represents an organic cation.

公开(公告)号：US20240168378A1

公开(公告)日：2024-05-23

申请号：US18380454

申请日：2023-10-16

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Jun HATAKEYAMA

IPC: G03F7/004 ,  C07C25/18 ,  C07C309/12 ,  C07C381/12 ,  C07D251/32 ,  C07D333/76 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C25/18 ,  C07C309/12 ,  C07C381/12 ,  C07D251/32 ,  C07D333/76 ,  G03F7/039 ,  C07C2601/08 ,  C07C2601/14 ,  C07C2602/08 ,  C07C2603/74

Abstract: A positive resist material containing a compound having two or more urethane groups and having a carboxy group and a sulfonium salt or iodonium salt of a sulfonic acid, the carboxy group being substituted with an acid-labile group and being bonded to a first urethane group via a first linking group, and the sulfonium salt or iodonium salt being bonded to a second urethane group directly or via a second linking group. This provides: a positive resist material that has higher sensitivity and higher resolution than conventional positive resist materials and smaller edge roughness and CDU, and allows excellent pattern profile after exposure to light; and a patterning process.

公开(公告)号：US11966161B2

公开(公告)日：2024-04-23

申请号：US17854048

申请日：2022-06-30

Applicant: JSR CORPORATION

Inventor： Takuhiro Taniguchi ,  Katsuaki Nishikori ,  Hayato Namai ,  Kazuya Kiriyama ,  Ken Maruyama

IPC: G03F7/004 ,  C07C303/32 ,  C07C381/12 ,  C08G75/20 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C303/32 ,  C07C381/12 ,  C08G75/20 ,  G03F7/0392 ,  G03F7/0397

Abstract: A radiation-sensitive resin composition includes: a polymer including a structural unit including an acid-labile group; and a compound represented by formula (1). R1, R2, and R3 each independently represent a halogen atom, a hydroxy group, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms; X1, X2, and X3 each independently represent a group represented by formula (2); a sum of d, e, and f is no less than 1; R4 represents a hydrocarbon group having 1 to 20 carbon atoms and R5 represents a hydrocarbon group having 1 to 20 carbon atoms, or R4 and R5 taken together represent a heterocyclic structure having 4 to 20 ring atoms, together with the sulfur atom to which R4 and R5 bond; n is 0 or 1; A− represents a monovalent sulfonic acid anion; and Y represents —COO—, —OCO—, or —N(R7)CO—.

公开(公告)号：US20240103365A1

公开(公告)日：2024-03-28

申请号：US18447143

申请日：2023-08-09

Applicant: SHIN-ETSU CHEMICAL CO., LTD.

Inventor： Seiichiro TACHIBANA ,  Takeru WATANABE ,  Daisuke KORI ,  Takashi SAWAMURA

IPC: G03F7/004 ,  C07C381/12 ,  C08F220/32 ,  G03F7/039

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C08F220/325 ,  G03F7/0397 ,  C08F2800/10

Abstract: The present invention provides a pattern forming method using an adhesion film forming composition comprising (A) a polymer compound, (B) a thermal acid generator, and (C) an organic solvent includes steps of: (I-1) applying the adhesion film forming composition onto a substrate to be processed and thereafter performing thermal treatment to form an adhesion film; (I-2) forming a resist upper layer film on the adhesion film using a resist upper layer film forming composition; (I-3) performing pattern exposure on the resist upper layer film and thereafter developing the resist upper layer film with a developer to form a circuit pattern on the resist upper layer film; and (I-4) transferring a pattern to the adhesion film and the substrate to be processed by dry etching with the resist upper layer film on which the circuit pattern is formed as a mask.