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    Photoresist composition and method of forming resist pattern
    9.
    发明申请
    Photoresist composition and method of forming resist pattern 审中-公开
    光刻胶组合物和形成抗蚀剂图案的方法

    公开(公告)号：US20060154171A1

    公开(公告)日：2006-07-13

    申请号：US10546573

    申请日：2004-02-25

    申请人： Taku Hirayama ,  Satoshi Fujimura ,  Kataro Endo ,  Keita Ishiduka

    发明人： Taku Hirayama ,  Satoshi Fujimura ,  Kataro Endo ,  Keita Ishiduka

    IPC分类号： G03C1/76

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0395 ,  G03F7/2041

    摘要： There is provided a positive photoresist composition for use in a method of forming a resist pattern that includes an immersion lithography step, which exhibits little line edge roughness and an excellent resist pattern profile. This photoresist composition includes a resin component (A), an acid generator component (B), an organic solvent (C), and a nitrogen-containing organic compound (D) represented by a general formula (1) shown below: [wherein, X, Y, and Z each represent, independently, an alkyl group that may contain an aryl group bonded to a terminal (although two terminals from the groups X, Y, and Z may also be bonded together to form a cyclic structure), at least one of X, Y, and Z contains a polar group, and the molecular weight of the compound (D) is at least 200].

    摘要翻译： 提供了一种用于形成抗蚀剂图案的方法中的正型光致抗蚀剂组合物，其包括浸渍光刻步骤，其显示出较小的线边缘粗糙度和优异的抗蚀剂图案轮廓。 该光致抗蚀剂组合物包含由下述通式（1）表示的树脂组分（A），酸产生剂组分（B），有机溶剂（C）和含氮有机化合物（D）：[其中， X，Y和Z各自独立地表示可以含有与末端键合的芳基的烷基（尽管X，Y和Z组中的两个末端也可以结合在一起形成环状结构）， X，Y和Z中的至少一个含有极性基团，化合物（D）的分子量至少为200]。

    Positive resist composition and method of forming resist pattern
    10.
    发明授权
    Positive resist composition and method of forming resist pattern 有权
    正型抗蚀剂组合物和形成抗蚀剂图案的方法

    公开(公告)号：US06982140B2

    公开(公告)日：2006-01-03

    申请号：US10466172

    申请日：2002-11-29

    申请人： Hideo Hada ,  Satoshi Fujimura ,  Jun Iwashita

    发明人： Hideo Hada ,  Satoshi Fujimura ,  Jun Iwashita

    IPC分类号： G03F7/004 ,  G03F7/30

    CPC分类号： G03F7/0397 ,  Y10S430/106 ,  Y10S430/111

    摘要： There is provided a positive type resist composition formed by dissolving (A) a resin component with a unit derived from a (meth)acrylate ester in the principal chain, for which the solubility in alkali increases under the action of acid, and (B) an acid generator component which generates acid on exposure, in an organic solvent component (C), wherein the resin component (A) is a copolymer comprising (a1) a unit derived from a (meth)acrylate ester comprising an acid dissociable, dissolution inhibiting group containing a polycyclic group, (a2) a unit derived from a (meth)acrylate ester comprising a lactone containing monocyclic group or polycyclic group, (a3) a unit derived from a (meth)acrylate ester comprising a hydroxyl group containing polycyclic group, and (a4) a unit derived from a (meth)acrylate ester comprising a polycyclic group which is different from the unit (a1), the unit (a2) and the unit (a3). This composition provides a chemically amplified positive type resist composition which displays excellent resolution, enables the depth of focus range of an isolated resist pattern to be improved, and enables the proximity effect to be suppressed.

    摘要翻译： 提供一种正型抗蚀剂组合物，其通过将（A）树脂组分与主链中衍生自（甲基）丙烯酸酯的单元溶解，其中在碱的作用下碱的溶解度增加，（B） 一种在有机溶剂组分（C）中暴露时产生酸的酸产生剂组分，其中树脂组分（A）是共聚物，其包含（a1）衍生自（甲基）丙烯酸酯的单元，其包含酸解离，溶解抑制 含有多环基团的基团，（a2）由含有内酯单体或多环基团的（甲基）丙烯酸酯衍生的单元，（a3）由含有羟基的多环基团的（甲基）丙烯酸酯衍生的单元， 和（a4）衍生自包含与单元（a1），单元（a2）和单元（a3）不同的多环基团的（甲基）丙烯酸酯的单元。 该组合物提供显示出优异的分辨率的化学放大正型抗蚀剂组合物，能够提高隔离抗蚀剂图案的聚焦范围的深度，并且能够抑制邻近效应。