公开(公告)号：US5908565A

公开(公告)日：1999-06-01

申请号：US383495

申请日：1995-02-03

申请人： Tatsuo Morita ,  Robert J. Markunas ,  Gill Fountian ,  Robert Hendry ,  Masataka Itoh

发明人： Tatsuo Morita ,  Robert J. Markunas ,  Gill Fountian ,  Robert Hendry ,  Masataka Itoh

IPC分类号： H05H1/46 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/50 ,  C23C16/54 ,  G02F1/136 ,  G02F1/1368 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316 ,  H01L21/318 ,  H01L21/321 ,  B23K10/00

CPC分类号： H01J37/32357 ,  C23C16/452 ,  C23C16/54 ,  H01L21/321

摘要： A line plasma source (20) comprises a plasma chamber (30) configured so that plasma (32) is situated remotely and on-edge with respect to a polycrystalline silicon surface (20S) to be treated, thereby preventing damage to the surface, facilitating treatment of large substrates, and permitting low temperature operation. Active species exit the plasma chamber through a long narrow ("line") outlet aperture (36) in the plasma chamber to a reaction zone (W) whereat the active species react with a reaction gas on the polycrystalline silicon surface (e.g., to form a deposited thin film). The polycrystalline silicon surface is heated to a low temperature below 6000.degree. C. Hydrogen is removed from the reactive surface in the low temperature line plasma source by a chemical displacement reaction facilitated by choice of dominant active species (singlet delta state of molecular oxygen). Reaction by-products including hydrogen are removed by an exhaust system (100) comprising long narrow exhaust inlet apertures (114L,114R) extending adjacent and parallel to the outlet aperture of the plasma chamber. An ionizing electric field is coupled to the plasma across a smallest dimension of the plasma, resulting in uniform production of active species and accordingly uniform quality of the thin film. The polycrystalline silicon surface to be treated is translated with respect to the plasma line source in a direction perpendicular to the outlet aperture of the plasma line source for integrating thin film quality in the direction of translation (22).

摘要翻译： 线等离子体源（20）包括等离子体室（30），其被配置为使得等离子体（32）相对于待处理的多晶硅表面（20S）远离和在边缘定位，从而防止对表面的损坏，促进 处理大基材，并允许低温操作。 活性物质通过等离子体室中的长狭窄（“线”）出口孔（36）离开等离子体室至反应区（W），其中活性物质与多晶硅表面上的反应气体反应（例如，形成 沉积的薄膜）。 多晶硅表面被加热到低于6000℃的低温。通过选择主要活性物质（分子氧的单态三态）促进的化学位移反应，从低温线等离子体源中的反应性表面除去氢。 包括氢的反应副产物通过排气系统（100）除去，排气系统（100）包括相邻并平行于等离子体室的出口孔延伸的长的狭窄的排气入口孔（114L，114R）。 电离电场通过等离子体的最小尺寸耦合到等离子体，导致活性物质的均匀产生和相应的薄膜质量均匀。 要处理的多晶硅表面相对于等离子体线源在垂直于等离子体线源的出口孔的方向上平移，用于在平移方向上整合薄膜质量（22）。